TRANSISTOR BUT12 Search Results

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

NPN Transistor TO220 VCEO 50v i 10A

Abstract: BUT12
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a TO220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUT12

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUT12

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUT12AX

Abstract: BUT12
Contextual Info: BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features • Isolated package ■ Fast switching. 1.3 Applications

BUT12

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,

BUT12XI

Abstract: BUX100 BUT12
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

PC based dc motor speed control

Abstract: BUT12 transistor but12
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT12 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃

BUT12A

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a T0-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators

transistor but12af

Abstract: but 12af BUT12F BUT12 BUT12AF
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT12F; BUT12AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. PIN base 2 collector 3 emitter mb APPLICATIONS

TRANSISTOR but12

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. F o i APPLICATIONS • Converters • Inverters • Switching regulators

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)

BUT12AF

Abstract: BUT12AF equivalent transistor IC 12A
Contextual Info: BUT12AF SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf TO-220F

BUT12

Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BUT12 Rating Unit 850 V 1000 V 400 V VCES : B UT12A Collector Emitter Voltage : BUT12 VcEO : B UT12A 450 V

NPN Transistor TO220 vcc 150V

Abstract: BUT12 transistor IC 12A
Contextual Info: SILICON DIFFUSED POWER TRANSISTOR BUT12 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER

BUT12

Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

BUT12

Abstract: BUT12A
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

but12 transistor

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol BUT12 BUT12A Rating Unit 850 V 1000 V 400 450 8 V V 20 4 A A 100 150 W VcES Collector Emitter Voltage BUT12 BUT12A

BUT12A

Abstract: BUT12
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

pt 4115 led driver

Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
Contextual Info: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O BU T12A

BUT12A

Abstract: BUT12 PC100-W
Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BUT12 Rating BU T12A Unit 850 V 1000 V 400 V 450 V V ceS C ollector E m itter Voltage BUT12 V cE O BU T12A

L25-M

Abstract: l25m BUT 1 BUT12
Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse