Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BUF725D Search Results

    TRANSISTOR BUF725D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUF725D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUF725D

    Abstract: ic 8853 transistor BUF725D BUF725
    Text: BUF725D TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D D Monolithic integrated C–E–free–wheeling diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate


    Original     		PDF BUF725D D-74025 BUF725D ic 8853 transistor BUF725D BUF725

    tp 312 transistor

    Abstract: No abstract text available
    Text: BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D D Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses


    Original     		PDF BUF725D D-74025 tp 312 transistor

    BUF725D

    Abstract: BUF725 transistor BUF725D
    Text: BUF725D Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D D Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    Original     		PDF BUF725D D-74025 18-Jul-97 BUF725D BUF725 transistor BUF725D

    equivalent transistor bul128

    Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent Shortform Transistor Guide BUL208 BUF656B KSE13007 equivalent BUD620 BUL128 replacements
    Text: Bipolar Power Transistors Data Book 1997 General Information Data Sheets Addresses Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF

    BUF725D

    Abstract: No abstract text available
    Text: _ BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Monolithic integrated C-E-free-wheel diode • Simple-sWitch-Off Transistor SWOT • HIGH SPEED technology • Planar passivation • 100 kHz switching rate


    OCR Scan     		PDF BUF725D 20-Jan-99 20-Jan-99 BUF725D

    BUF725

    Abstract: No abstract text available
    Text: BUF725D Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate


    OCR Scan     		PDF BUF725D 20-Jan-99 BUF725

    Buf725d

    Abstract: transistor BUF725D
    Text: T e m ic BUF725D Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • • Monolithic integrated C-E-free-wheel diode Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate


    OCR Scan     		PDF BUF725D D-74025 18-Jul-97 Buf725d transistor BUF725D