TRANSISTOR BU921 Search Results

TRANSISTOR BU921 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BU921 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor SD335 Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339 Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen	Original	Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339	PDF
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046	PDF
THINKI transistor catalog Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747 Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003	Original	2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747	PDF
k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417	PDF
TRANSISTOR DATASHEET D1555 Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440	Original	2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
transistor BU 921 T Abstract: 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920 Text: 7qsqg37 0056575 □ • / T ^ 3 3 ^ ' 2 . ct SGS-THOMSON bÜ IIS fÆ BU922/P/PFI/T S G S-TH0MS0N 3QE D HIGH VOLTAGE POWER DISSIPATION . HIGH VOLTAGE POWER DARLINGTON ■ AUTOMOTIVE IGNITION APPLICATIONS ■ HIGH CURRENT DESCRIPTION The BU920/921/922, BU920P/921P/922P, BU920PFI/BU921PFI/BU922PFI and BU920T/921T/922T	OCR Scan	7qHqS37 BU922/P/PFI/T BU920/921/922, BU920P/921P/922P, BU920-PFI/BU921PFI/BU922PFI BU920T/921T/922T OT-93 ISOWATT218 O-220 O-218) transistor BU 921 T 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920	PDF
G5752 Abstract: transistor BU 921 T 922P BU922T 921P BU922P ISOWATT21 BU921 Text: SGS-THOMSON [LIlOlF^OiDOi BU922/P/PFI/T HIGH VOLTAGE POWER DISSIPATION • HIGH VOLTAGE POWER DARLINGTON ■ AUTOM OTIVE IGNITION APPLICATIONS ■ HIGH CURRENT D E S C R IP T IO N The BU920/921/922, BU920P/921P/922P, BU920PFI/BU921PFI/BU922PFI and BU920T/921T/922T	OCR Scan	BU922/P/PFI/T BU920/921/922, BU920P/921P/922P, BU920PFI/BU921PFI/BU922PFI BU920T/921T/922T OT-93 ATT218 O-220 G5752 transistor BU 921 T 922P BU922T 921P BU922P ISOWATT21 BU921	PDF