TRANSISTOR BU 406 Search Results

TRANSISTOR BU 406 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BU 406 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
walkie talkie circuit diagram Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12 Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206	Original	5-4-199X) LR46094 LR44087 E39291 E39281 walkie talkie circuit diagram Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12	PDF
Catalog Sensors for Process Applications Abstract: NCB1.5-8GM25-N0 5M Text: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT°6OCFBUBCMFGPSRVBMJUZBOEDIPJDF 8F BSF B MFBEJOH NBOVGBDUVSFS PG JOEVTUSJBM TFOTPST BOE TFOTPS TZTUFNT	Original	199003130E Catalog Sensors for Process Applications NCB1.5-8GM25-N0 5M	PDF
pnp transistor 1000v Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48 Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A	OCR Scan	BUV48 BUV47 CB-244 CB-285 pnp transistor 1000v transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48	PDF
philips power transistor bd139 Abstract: BU406F BU407F 407F Text: N AUER PHILIPS/DISCRETE bbiS3^31 D02fl53G 7M1! M A P X bU 4UblBU 407F bTE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a SO T186 envelope w ith ele c tric a lly Isolated m ounting base, intended fo r use in converters, inverters, sw itching regulators	OCR Scan	D02fl53G bU4Ubl-BU407F OT186 BU406F philips power transistor bd139 BU407F 407F	PDF
TRANSISTOR BH RW Abstract: No abstract text available Text: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape	OCR Scan	62702-F1129 1200MÍ 900MHz 800MHz /400MHz 300MH 00MHz -921s TRANSISTOR BH RW	PDF
darlington NPN 1000V 8a transistor Abstract: NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90 Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP CB-244 CB-285 darlington NPN 1000V 8a transistor NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90	PDF
transistor buv 90 Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide	OCR Scan	O-220 00V-600V 1000T 2060T CB-244 CB-285 transistor buv 90 transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C	PDF
C 3311 transistor Abstract: NPN Transistor 5A 400V T-33-11 KSD5017 transistor BU408 samsung tv KSD5017 BU406 BU406H power TRANSISTOR 800V 5A Text: SAMSUNG S E M I C O N DUCTOR 14E INC D \| 7^4145 G0Q7bfla b NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5017 T-33-11 COLOR TV HORIZONTAL'OUTPUT APPLICATIONS T O 3P F High Collector-Base VWtage VCeo=1500V ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic	OCR Scan	KSD5017 G007baa -55-V150 T-33-11 BU406H BU408 G007bÃ BU406/406H/408 C 3311 transistor NPN Transistor 5A 400V T-33-11 KSD5017 transistor BU408 samsung tv KSD5017 BU406 BU406H power TRANSISTOR 800V 5A	PDF
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N	PDF
BUY28 Abstract: BUY26 BUY27 66055 FK 61-04 2399A B3HK 6104-B Text: BUY 26, BUY 27, BUY 28 NPN Power transistors for switching applications BUY 26, BUY 27 and BUY 28 are alloyed NPN silicon transistors in a metal case. The collector is electrically connected to the case. The insulation clearances correspond to the insulation group C of the German VDE Standard 0110. The transistors are	OCR Scan	C66060-A 2399-A1 6060-A 399-A 6055-A 6104-B 100ms BUY28 BUY26 BUY27 66055 FK 61-04 2399A B3HK	PDF
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan		PDF
RCA transistor 40410 Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410	PDF
RCA 40636 transistor Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327 Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.	OCR Scan	ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327	PDF
2N3440 2N5416 REPLACEMENT Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872 Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 2N3440 2N5416 REPLACEMENT TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872	PDF

HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan		PDF
2N3440 2N5416 REPLACEMENT Abstract: 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N5954 2N5416 REPLACEMENT 2N3772 RCA RCA 40250 2N5781 2N6107 Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 0 0 W . . . V C E to 1 2 5 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. P y * 40 W max. TO-66 * lc * - 6 A max. P y - 40 W max. 1TO-66)* le « 7 A max. Py - 40 W max. V E R S A W ATT	OCR Scan	IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N3440 2N5416 REPLACEMENT 2N5294 replacement 2N5296 RCA 2N6108 RCA 2N5954 2N5416 REPLACEMENT 2N3772 RCA RCA 40250 2N5781 2N6107	PDF
RCA 40636 transistor Abstract: rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor 2N3055 RCA rca 40363 RCA 40321 BUX 115 Text: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32 a 42x42 42x42	OCR Scan	TQ-66Ã 42x42 130x130 2N6177 2N3439 2N5415 2N358S 2N6213 2N6079 RCA 40636 transistor rca 40636 rca 40327 RCA 40325 40327 rca RCA 2N3055 transistor 2N3055 RCA rca 40363 RCA 40321 BUX 115	PDF
8U406 Abstract: BC317 Philips philips e3 407F flyback transformer philips BU406F BU407F Q030 407F Transistors Text: PHILIPS INT ERNATIONAL MSE D E3 7 3tlüö2fci OOaüôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators	OCR Scan	711005b BU406F BU407F OT186 8U406 BC317 Philips philips e3 407F flyback transformer philips BU407F Q030 407F Transistors	PDF
um91610 Abstract: No abstract text available Text: UNITED MICROELECTRONICS TE 9325812 U N IT E D D Ë \| ^325015 000035e] 7 M IC R O E L E C T R O N IC S 92D 00359 D 7 -7 $ -0 7 -0 7 UM 91610 A "I • . r ' ì j 10 M em ory Pulse D ialer ¡- Features • Ten 16-digit number memories location 0-9 with ■ ' Can Interface with inexpensive XY matrix keyboard	OCR Scan	000035e 16-digit um91610	PDF
2N6476 JAN Abstract: 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372 Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 00 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT	OCR Scan	IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6476 JAN 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372	PDF
ED38 diode Abstract: 2N2222A 338 TEKELEC 297 Sdk-85 Intel sdk-85 rom code sdk 8085 microcomputer BBL3 8048 printer intel MCS-48 Monsanto pan Text: intei I n t e l C orp ora tion, 1977 APPLICATION NOTE AP-27 P R IC E $1.GG Related Intel Publications "UPI-41 User's M anual” The material in this A p p l i c a ti o n Note is f o r in fo r m a t io n a l purposes on ly and is subject t o change w i t h o u t notice. lntel C o rp o ra ti o n has made an e f f o r t to ve rify t h a t the mate	OCR Scan	AP-27 UPI-41TM S-10380 CH-8021 ED38 diode 2N2222A 338 TEKELEC 297 Sdk-85 Intel sdk-85 rom code sdk 8085 microcomputer BBL3 8048 printer intel MCS-48 Monsanto pan	PDF
rca 40410 Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 rca 40410 rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA	PDF
407f Abstract: 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors Text: PHILIPS INTE RNAT ION AL M5E D E3 711Qfi5ti OGaOôB'ï ö S P H I N BU406F BU407F T - 3 ß - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators	OCR Scan	711Qfi5ti BU406F BU407F OT186 1Q62b 3D64t. 407f 18150A philips 3e3 eht transformer bu 407 F TRANSISTOR 407F Transistors	PDF
ic 74226 Abstract: jk flip flop 74103 ic D flip flop 7474 7471 rs flip flop 4011 flip flop IC 7400 SERIES list Ic ttl 7490, 7493, 7495 ci 74386 7414 NOT gate ic IC LA 74141 Text: 1SE D RICOH CORP/ ELECTRONIC 7 7 4 4bTO 0G0Q7Qt, b RICOH No. 84-01 4-1-1984 Microelectronic Specification T -tfZ -3 1 RP3G01 0 2 • A N A L O G /D IG IT A L B I- C M O S GATE ARRAYS EFFICIENCY GENERAL DESCRIPTIO N T h e R P 3 G 01 and R P 3 G 0 2 a r e A n a lo g /D ig ita l	OCR Scan	RP3G01 RP3G01 ic 74226 jk flip flop 74103 ic D flip flop 7474 7471 rs flip flop 4011 flip flop IC 7400 SERIES list Ic ttl 7490, 7493, 7495 ci 74386 7414 NOT gate ic IC LA 74141	PDF

TRANSISTOR BU 406 Search Results

TRANSISTOR BU 406 Result Highlights (5)

TRANSISTOR BU 406 Datasheets Context Search

walkie talkie circuit diagram

Catalog Sensors for Process Applications

pnp transistor 1000v

philips power transistor bd139

TRANSISTOR BH RW

darlington NPN 1000V 8a transistor

transistor buv 90

C 3311 transistor

bc 540

BUY28

transistor kt 326

RCA transistor 40410

RCA 40636 transistor

2N3440 2N5416 REPLACEMENT

HBF4727A

2N3440 2N5416 REPLACEMENT

RCA 40636 transistor

8U406

um91610

2N6476 JAN

ED38 diode

rca 40410

407f

ic 74226