TRANSISTOR BT2 Search Results

BSP16T1

Abstract: SMD310
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

transistor bt2

Abstract: marking Bt2 marking .Bt2
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

BSP16T1

Abstract: SMD310
Contextual Info: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300

marking Bt2

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor Motorola Preferred Device PNP Silicon COLLECTOR 2,4 SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit

BSP16T1

Abstract: SMD310 marking Bt2
Contextual Info: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3

BSP16T1

Abstract: SMD310 C200C marking Bt2
Contextual Info: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3

Sc59

Abstract: marking H2A sot-23
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 4 MAXIMUM RATINGS 1 Rating Symbol

marking code .Bt2

Abstract: BT225 BP317 marking Bt2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB2 PNP resistor-equipped double transistor Product specification 1999 Aug 03 Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB2 FEATURES • Transistors with built-in bias resistors R1 and R2

Response AA0482

Abstract: 49/Response AA0482
Contextual Info: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this

2T2 transistor

Abstract: BUK456 BUK456-200A BUK456-200B T0220AB PHILIPS 016
Contextual Info: PHILIPS INTERNATIONAL bSE T> m TUDfiEb OObHlEl 5^3 • PHIN Philips Semiconductors Product Specification BUK456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SO T-223 PA C K A G E P N P SILICON HIGH VO LTAGE TRANSISTOR S U R F A C E MOUNT EMITTER 3 MAXIMUM RATINGS Sym bol Value

BT2907A

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Inform ation General Purpose Transistor M M BT2907A W T1 PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-7Û package

transistor bt2

Abstract: BST16 BST39 FMMTA92 BSOT89
Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST16 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST39 PARTMARKING DETAIL – BT2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996_ O_ FEATURES * HighVCE0 * Low saturation voltage COMPLEMENTARY TYPE - BST39 PARTMARKING DETAIL- BT2 ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER VALUE UNIT V V Collector-Base Voltage

Contextual Info: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)

BSP225

Contextual Info: Philips Com ponents Data sheet status Product specification date of issue November 1990 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • LOW BSP225 RDS on SYMBOL • Direct interface to C-MOS, TTL, etc. • High-speed switching

l7605

Abstract: l7812 12v regulator TRANSISTOR L7812 transistor l7805cv TRANSISTOR l7824cv Transistor L7824 L7812ct 12v ,5a L7824 24V positive voltage regulator 17b05 l7812 voltage regulator
Contextual Info: SGS-THOMSON L7800 SERIES POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT UP TO 1,5A ■ OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8 5‘ 9' 12' 15; 18; 20; 24V ’ ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION • OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION

BT2222AW

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T -3 2 3 /S C -7 0 package which is

MRF857S

Abstract: transistor bd136 MRF857S equivalent 305D-01
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.

marking 82T

Abstract: Transistor W03 EUA MARKING CODE BSP225 SWITCHING TRANSISTOR 144 PH sot223 PH marking code sot223 philips transformer 524 w03 TRANSISTOR
Contextual Info: P hilips C om ponents BSP225 Data sheet status Product specification date of issue November 1990 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low RDS on • Direct interface to C-MOS, TTL, etc. • High-speed switching

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ70

Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

toshiba tc110g

Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective

BT2222AW

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Prelim inary Inform ation General Purpose Transistor MMBT2222AW T1 NPN Silicon M otorola Preferred D evice These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T - 3 2 3 /S C -7 0 package which is