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    TRANSISTOR BT2 Search Results

    TRANSISTOR BT2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BT2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSP16T1

    Abstract: SMD310
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


    Original     		PDF BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310

    transistor bt2

    Abstract: marking Bt2 marking .Bt2
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


    Original     		PDF OT-223 BSP16T1 318E-04, O-261AA BSP16T1/D transistor bt2 marking Bt2 marking .Bt2

    BSP16T1

    Abstract: SMD310
    Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300


    Original     		PDF BSP16T1 OT-223 318E-04, O-261AA r14525 BSP16T1/D BSP16T1 SMD310

    BSP16T1

    Abstract: SMD310 marking Bt2
    Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3


    Original     		PDF BSP16T1/D BSP16T1 OT-223 BSP16T1/D* BSP16T1 SMD310 marking Bt2

    BSP16T1

    Abstract: SMD310 C200C marking Bt2
    Text: MOTOROLA Order this document by BSP16T1/D SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3


    Original     		PDF BSP16T1/D BSP16T1 OT-223 318E-Inc. BSP16T1 SMD310 C200C marking Bt2

    Sc59

    Abstract: marking H2A sot-23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 4 MAXIMUM RATINGS 1 Rating Symbol


    Original     		PDF OT-223 BSP16T1 318E-04, O-261AA Sc59 marking H2A sot-23

    marking code .Bt2

    Abstract: BT225 BP317 marking Bt2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB2 PNP resistor-equipped double transistor Product specification 1999 Aug 03 Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB2 FEATURES • Transistors with built-in bias resistors R1 and R2


    Original     		PDF MBD128 MAM426 115002/01/pp8 marking code .Bt2 BT225 BP317 marking Bt2

    transistor bt2

    Abstract: BST16 BST39 FMMTA92 BSOT89
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BST16 ✪ ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE – BST39 PARTMARKING DETAIL – BT2 E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


    Original     		PDF BST16 BST39 -280V -250V -50mA, -30mA, -10mA, 30MHz FMMTA92 transistor bt2 BST16 BST39 BSOT89

    marking Bt2

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor Motorola Preferred Device PNP Silicon COLLECTOR 2,4 SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit


    OCR Scan     		PDF OT-223 BSP16T1 318E-04, O-261AA marking Bt2

    Response AA0482

    Abstract: 49/Response AA0482
    Text: SECTION 2 SPECIFICATIONS INTRODUCTION The DSP56303 is fabricated in high density CMOS with Transistor-Transistor Logic TTL compatible inputs and outputs. The DSP56303 specifications are preliminary and are from design simulations, and may not be fully tested or guaranteed at this


    OCR Scan     		PDF DSP56303 Response AA0482 49/Response AA0482

    2T2 transistor

    Abstract: BUK456 BUK456-200A BUK456-200B T0220AB PHILIPS 016
    Text: PHILIPS INTERNATIONAL bSE T> m TUDfiEb OObHlEl 5^3 • PHIN Philips Semiconductors Product Specification BUK456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK456-200A/B T0220AB -100-C -200A -200B 711DA2b DDb41BS 2T2 transistor BUK456 BUK456-200A BUK456-200B PHILIPS 016

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP16T1 SOT-223 Package High Voltage Transistor PNP Silicon Motorola Preferred Device COLLECTOR 2,4 SO T-223 PA C K A G E P N P SILICON HIGH VO LTAGE TRANSISTOR S U R F A C E MOUNT EMITTER 3 MAXIMUM RATINGS Sym bol Value


    OCR Scan     		PDF BSP16T1 OT-223 T-223 318E-04, O-261AA

    BT2907A

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Inform ation General Purpose Transistor M M BT2907A W T1 PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-7Û package


    OCR Scan     		PDF OT-323/SC-7Û BT2907A

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - FEBRUARY 1996_ O_ FEATURES * HighVCE0 * Low saturation voltage COMPLEMENTARY TYPE - BST39 PARTMARKING DETAIL- BT2 ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER VALUE UNIT V V Collector-Base Voltage


    OCR Scan     		PDF BST39 Tamb-25Â -250V lc--30m -50mA, -10mA, 00CHB43

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)


    OCR Scan     		PDF Q68000-A4417 OT-23 EHP00770 EHP00772 S35bOÂ 01EES4S A235b05 012254b

    BSP225

    Abstract: No abstract text available
    Text: Philips Com ponents Data sheet status Product specification date of issue November 1990 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • LOW BSP225 RDS on SYMBOL • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP225 OT223 bb53T31 003bl00 BSP225. OT223. BSP225

    l7605

    Abstract: l7812 12v regulator TRANSISTOR L7812 transistor l7805cv TRANSISTOR l7824cv Transistor L7824 L7812ct 12v ,5a L7824 24V positive voltage regulator 17b05 l7812 voltage regulator
    Text: SGS-THOMSON L7800 SERIES POSITIVE VOLTAGE REGULATORS • OUTPUT CURRENT UP TO 1,5A ■ OUTPUT VOLTAGES OF 5; 5.2; 6; 8; 8 5‘ 9' 12' 15; 18; 20; 24V ’ ■ THERMAL OVERLOAD PROTECTION ■ SHORT CIRCUIT PROTECTION • OUTPUT TRANSISTOR SOA PROTECTION DESCRIPTION


    OCR Scan     		PDF L7800 O-220, ISOWATT220 L78XX S-3891/1 L78XX l7605 l7812 12v regulator TRANSISTOR L7812 transistor l7805cv TRANSISTOR l7824cv Transistor L7824 L7812ct 12v ,5a L7824 24V positive voltage regulator 17b05 l7812 voltage regulator

    BT2222AW

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information General Purpose Transistor MMBT2222AWT1 NPN Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T -3 2 3 /S C -7 0 package which is


    OCR Scan     		PDF MMBT2222AWT1 QG13G71 BT2222AW

    MRF857S

    Abstract: transistor bd136 MRF857S equivalent 305D-01
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt U H F large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 8 0 0 -9 6 0 MHz.


    OCR Scan     		PDF 305D-01, MRF857S transistor bd136 MRF857S equivalent 305D-01

    marking 82T

    Abstract: Transistor W03 EUA MARKING CODE BSP225 SWITCHING TRANSISTOR 144 PH sot223 PH marking code sot223 philips transformer 524 w03 TRANSISTOR
    Text: P hilips C om ponents BSP225 Data sheet status Product specification date of issue November 1990 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • Low RDS on • Direct interface to C-MOS, TTL, etc. • High-speed switching


    OCR Scan     		PDF BSP225 OT223 OT223 003bl00 BSP225. 18IBI OT223. 003bl01 marking 82T Transistor W03 EUA MARKING CODE BSP225 SWITCHING TRANSISTOR 144 PH sot223 PH marking code sot223 philips transformer 524 w03 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF BFQ70 Q62702-F774 S23SbOS 0Db7117

    BFQ70

    Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
    Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF VCE051S1 Q62702-F774 fi23SbOS 0Gb7117 BFQ70 zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C VCE051S1 bfq 85 zo 107

    toshiba tc110g

    Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram
    Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective


    OCR Scan     		PDF

    BT2222AW

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Prelim inary Inform ation General Purpose Transistor MMBT2222AW T1 NPN Silicon M otorola Preferred D evice These transistors are designed for general purpose amplifier applica­ tions. They are housed in the S O T - 3 2 3 /S C -7 0 package which is


    OCR Scan     		PDF MMBT2222AW BT2222AW