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    TRANSISTOR BR 13003D Search Results

    TRANSISTOR BR 13003D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BR 13003D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 13003d

    Abstract: 13003d br 13003d 13003d TRANSISTOR transistor br 13003d ST13003D-K transistor st 13003d NPN transistor 13003D ELECTRONIC BALLAST transistor DIAGRAM transistor ST 13003D w, TO-126
    Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original
    ST13003D-K OT-32 transistor 13003d 13003d br 13003d 13003d TRANSISTOR transistor br 13003d ST13003D-K transistor st 13003d NPN transistor 13003D ELECTRONIC BALLAST transistor DIAGRAM transistor ST 13003D w, TO-126 PDF

    transistor 13003d

    Abstract: 13003d 13003d TRANSISTOR equivalent br 13003d 13003D TRANSISTOR 13003D Datasheet transistor st 13003d NPN transistor 13003D ST13003D-K w 13003d TRANSISTOR npn
    Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original
    ST13003D-K OT-32 transistor 13003d 13003d 13003d TRANSISTOR equivalent br 13003d 13003D TRANSISTOR 13003D Datasheet transistor st 13003d NPN transistor 13003D ST13003D-K w 13003d TRANSISTOR npn PDF

    13003d

    Abstract: transistor 13003d
    Text: ST13003D-K High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Integrated antiparallel collector-emitter diode


    Original
    ST13003D-K OT-32 13003d transistor 13003d PDF

    13003D

    Abstract: transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d
    Text: A Product Line of Diodes Incorporated Green APT13003D 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data •          BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode


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    APT13003D MIL-STD-202, 200mg 400mg DS36347 13003D transistor 13003d NPN transistor 13003D transistor br 13003d br 13003d PDF

    13003D

    Abstract: No abstract text available
    Text: DXT13003DG 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 450V • • • BVCES > 700V BVEBO > 9V • • IC = 1.5A high Continuous Collector Current • • Integrated Collector-Emitter Diode to act as free-wheeling diode


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    DXT13003DG OT223 J-STD-020 MIL-STD-202, DS37262 13003D PDF

    13003D

    Abstract: br 13003d transistor 13003d br+13003d
    Text: DXT13003DK 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252 Features Mechanical Data • BVCEO > 450V • • BVCES > 700V • Case Material: Molded Plastic, "Green" Molding Compound • BVEBO > 9V • • • IC = 1.5A high Continuous Collector Current Integrated Anti-Parallel Diode to act as free-wheeling diode


    Original
    DXT13003DK J-STD-020 MIL-STD-202, DS37297 13003D br 13003d transistor 13003d br+13003d PDF