TRANSISTOR BOOK Search Results

TRANSISTOR BOOK Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

TRANSISTOR BOOK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
free transistor equivalent book Abstract: transistor number code book FREE free all transistor equivalent book PNP TRANSISTOR SOT363 PUMF11 data sheet transistor PNP marking A1 TRANSISTOR PNP TRANSISTOR SC-70 transistor PNP MBK120 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product specification 2002 Apr 09 Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor	Original	MBD128 PUMF11 OT363 OT323 SC-70) SCA74 613514/01/pp8 free transistor equivalent book transistor number code book FREE free all transistor equivalent book PNP TRANSISTOR SOT363 PUMF11 data sheet transistor PNP marking A1 TRANSISTOR PNP TRANSISTOR SC-70 transistor PNP MBK120	PDF
transistor number code book FREE Abstract: PNP TRANSISTOR SOT363 PUMF12 10311 marking A1 TRANSISTOR Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product specification 2002 Nov 07 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor	Original	MBD128 PUMF12 OT363 OT323 SC-70) SCA74 613514/01/pp8 transistor number code book FREE PNP TRANSISTOR SOT363 PUMF12 10311 marking A1 TRANSISTOR	PDF
D1486 Abstract: 2SC4342 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM	Original	2SC4342 2SC4342 O-126 D1486	PDF
D1485 Abstract: 2SA1720 Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM	Original	2SA1720 2SA1720 O-220 D1485	PDF
nec 620 Abstract: 2SD1582 hFE transistor high hfe transistor Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is	Original	2SD1582 2SD1582 nec 620 hFE transistor high hfe transistor	PDF
2SC3603 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise	OCR Scan	2SC3603 2SC3603	PDF
2SA1743 Abstract: C11531E Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is	Original	2SA1743 2SA1743 C11531E	PDF
2SD1581 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is	Original	2SD1581 2SD1581	PDF
2SA1742 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal	Original	2SA1742 2SA1742 O-220 O-220)	PDF
2SA1741 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is	Original	2SA1741 2SA1741	PDF
2SC4550 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4550 2SC4550	PDF
NEC 2sc4552 Abstract: 2SC4552 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4552 2SC4552 NEC 2sc4552	PDF
D1615 Abstract: transistor ab2 12 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for	Original	2SD2425 2SD2425 2SB1578 C11531E) D1615 transistor ab2 12	PDF
2SD2402 Abstract: transistor 2sD2402 Transistor Marking EY Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for	Original	2SD2402 2SD2402 2SB1571 transistor 2sD2402 Transistor Marking EY	PDF

NEC K 2500 Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise	OCR Scan	2SC3604 2SC3604 15obots NEC K 2500 N transistor NEC K 2500 2SC1223 transistor marking S00 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150	PDF
2SB1453 Abstract: NEC 2SB1453 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid	Original	2SB1453 2SB1453 NEC 2SB1453	PDF
2SB1453 Abstract: NEC 2SB1453 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid	Original	2SB1453 2SB1453 NEC 2SB1453	PDF
D1316 Abstract: 2SA1744 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is	Original	2SA1744 2SA1744 D1316	PDF
BY206 Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION	Original	M3D088 BRY61 MGL167 MGC421 SCA63 115002/00/03/pp8 BY206 BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note	PDF
2SC4551 Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is	Original	2SC4551 2SC4551	PDF
PT 4304 a transistor Abstract: 2SC3587 noise diode Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise	Original	2SC3587 2SC3587 PT 4304 a transistor noise diode	PDF
NEC RELAY Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct	Original	2SD2163 2SD2163 NEC RELAY	PDF
transistor NEC D 586 Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500 Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise	OCR Scan	2SC3587 2SC3587 transistor NEC D 586 nec a 634 NEC D 586 NEC K 2500 NEC 3500	PDF
PDTC123ET Abstract: PDTA123ET Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET	Original	M3D088 PDTA123ET PDTC123ET. SCA55 117047/1200/01/pp8 PDTC123ET	PDF

TRANSISTOR BOOK Search Results

TRANSISTOR BOOK Result Highlights (5)

TRANSISTOR BOOK Datasheets Context Search

free transistor equivalent book

transistor number code book FREE

D1486

D1485

nec 620

2SC3603

2SA1743

2SD1581

2SA1742

2SA1741

2SC4550

NEC 2sc4552

D1615

2SD2402

NEC K 2500

2SB1453

2SB1453

D1316

BY206

2SC4551

PT 4304 a transistor

NEC RELAY

transistor NEC D 586

PDTC123ET