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    TRANSISTOR BLC Search Results

    TRANSISTOR BLC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BLC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLC8G27LS-160AV

    Abstract: BLC8G27LS sot1275
    Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 1 — 23 May 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


    Original     		PDF BLC8G27LS-160AV BLC8G27LS-160AV BLC8G27LS sot1275

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.


    Original     		PDF BLC8G27LS-100AV

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-180AV Power LDMOS transistor Rev. 1 — 1 July 2014 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.


    Original     		PDF BLC8G27LS-180AV

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.


    Original     		PDF BLC8G27LS-240AV

    Untitled

    Abstract: No abstract text available
    Text: BLC8G24LS-240AV Power LDMOS transistor Rev. 1 — 26 September 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.


    Original     		PDF BLC8G24LS-240AV

    BLC6G22-100

    Abstract: BLC6G22LS-100 SOT896-1
    Text: BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:


    Original     		PDF BLC6G22-100; BLC6G22LS-100 BLC6G22-100 6G22LS-100 BLC6G22LS-100 SOT896-1

    ACPR400

    Abstract: ACPR600 BLC6G20-110 BLC6G20LS-110
    Text: BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:


    Original     		PDF BLC6G20-110; BLC6G20LS-110 ACPR400 ACPR600 BLC6G20-110 6G20LS-110 ACPR400 ACPR600 BLC6G20LS-110

    Untitled

    Abstract: No abstract text available
    Text: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.


    Original     		PDF BLC8G27LS-160AV

    BLC6G22-130

    Abstract: BLC6G22LS-130
    Text: BLC6G22-130; BLC6G22LS-130 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:


    Original     		PDF BLC6G22-130; BLC6G22LS-130 BLC6G22-130 6G22LS-130 BLC6G22LS-130

    BLC6G20-140

    Abstract: BLC6G20LS-140 sot895-1 sot896-1
    Text: BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:


    Original     		PDF BLC6G20-140; BLC6G20LS-140 BLC6G20-140 6G20LS-140 BLC6G20LS-140 sot895-1 sot896-1

    BLC6G22-75

    Abstract: BLC6G22LS-75 RF35 sot895a sot896b
    Text: BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor Rev. 01 — 7 February 2008 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance


    Original     		PDF BLC6G22-75; BLC6G22LS-75 BLC6G22-75 BLC6G22LS-75 RF35 sot895a sot896b

    BLC6G10-200

    Abstract: BLC6G10LS-200
    Text: BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance


    Original     		PDF BLC6G10-200; BLC6G10LS-200 BLC6G10-200 6G10LS-200 BLC6G10LS-200

    BLC573

    Abstract: 1800 ldmos enamelled copper wire tables rogers 5880 C4532X7R1E475MT020U
    Text: BLC573 HF / VHF power LDMOS transistor Rev. 01 — 11 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.


    Original     		PDF BLC573 BLC573 1800 ldmos enamelled copper wire tables rogers 5880 C4532X7R1E475MT020U

    BLC6G10LS-160

    Abstract: BLC6G10-160
    Text: BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance


    Original     		PDF BLC6G10-160; BLC6G10LS-160 BLC6G10-160 6G10LS-160 BLC6G10LS-160

    Untitled

    Abstract: No abstract text available
    Text: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.


    Original     		PDF BLC8G21LS-160AV

    BLC6G10LS-160

    Abstract: BLF6G10LS-200 RF35
    Text: BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-200 BLF6G10LS-200 BLC6G10LS-160 RF35

    LB1274

    Abstract: No abstract text available
    Text: Ordering number: EN 535C | Monolithic Digital 1C LB1274 N0.535C SAMYO i 6-Unit, Darlington Transistor Array Circuit structure of this 1C is a 6-u nit Darlington transistor array w ith NPN transistors. The 1C is ideal for driving printers, relays, and lamps. Protective diodes guard against negative inputs. Thus it has advantages w hen


    OCR Scan     		PDF LB1274 18-digit 85-mAload LB1274

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured


    OCR Scan     		PDF BUK200-50Y BUK200-50Y

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1954C SA WO _ 2SC3779 No.l954C NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NFrl.5dB typ f=0.9GHz .


    OCR Scan     		PDF 1954C 2SC3779 l954C 200MHz

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: E N 3964 FC149 No.3964 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications F eatures •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.


    OCR Scan     		PDF FC149 2SA1813, 53094TH FC149

    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


    OCR Scan     		PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700

    transistor BF 451

    Abstract: transistor BLC
    Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 2 5 1 U nit in mm TV TUNER, VHF O SCILLATO R APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent


    OCR Scan     		PDF SC-70 transistor BF 451 transistor BLC

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 5053 FX803 TR : N PN Epitaxial P lan ar Silicon T ransistor SBD : Schottky B arrier Diode Twin Type • Cathode Common DC-DC Converter F e a tu r e s • Complex type of a low saturation voltage, high speed switching and large current NPN transistor and


    OCR Scan     		PDF FX803 FX803 2SB1628 SB20W03P, 101B2

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.


    OCR Scan     		PDF FX501 FX501 2SB1205, 42695MO BX-1388