TRANSISTOR BLC Search Results

BLC8G27LS-160AV

Abstract: BLC8G27LS sot1275
Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 1 — 23 May 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Contextual Info: BLC8G27LS-100AV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.

Contextual Info: BLC8G27LS-180AV Power LDMOS transistor Rev. 1 — 1 July 2014 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Contextual Info: BLC8G27LS-240AV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Contextual Info: BLC8G24LS-240AV Power LDMOS transistor Rev. 1 — 26 September 2013 Objective data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

BLC6G22-100

Abstract: BLC6G22LS-100 SOT896-1
Contextual Info: BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:

ACPR400

Abstract: ACPR600 BLC6G20-110 BLC6G20LS-110
Contextual Info: BLC6G20-110; BLC6G20LS-110 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:

Contextual Info: BLC8G27LS-160AV Power LDMOS transistor Rev. 2 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1.

BLC6G22-130

Abstract: BLC6G22LS-130
Contextual Info: BLC6G22-130; BLC6G22LS-130 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1:

BLC6G20-140

Abstract: BLC6G20LS-140 sot895-1 sot896-1
Contextual Info: BLC6G20-140; BLC6G20LS-140 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1:

BLC6G22-75

Abstract: BLC6G22LS-75 RF35 sot895a sot896b
Contextual Info: BLC6G22-75; BLC6G22LS-75 Power LDMOS transistor Rev. 01 — 7 February 2008 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

BLC6G10-200

Abstract: BLC6G10LS-200
Contextual Info: BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

BLC573

Abstract: 1800 ldmos enamelled copper wire tables rogers 5880 C4532X7R1E475MT020U
Contextual Info: BLC573 HF / VHF power LDMOS transistor Rev. 01 — 11 December 2008 Preliminary data sheet 1. Product profile 1.1 General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

BLC6G10LS-160

Abstract: BLC6G10-160
Contextual Info: BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev. 01 — 12 May 2006 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

Contextual Info: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.

BLC6G10LS-160

Abstract: BLF6G10LS-200 RF35
Contextual Info: BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

LB1274

Contextual Info: Ordering number: EN 535C | Monolithic Digital 1C LB1274 N0.535C SAMYO i 6-Unit, Darlington Transistor Array Circuit structure of this 1C is a 6-u nit Darlington transistor array w ith NPN transistors. The 1C is ideal for driving printers, relays, and lamps. Protective diodes guard against negative inputs. Thus it has advantages w hen

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK200-50Y TOPFET high side switch_ DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured

Contextual Info: Ordering number: EN 1954C SA WO _ 2SC3779 No.l954C NPN Epitaxial Planar Silicon Transistor UHF Low-Noise Amp, Wide-Band Amp Applications Applications . UHF low-noise amplifiers,wide-band amplifiers Features . Small noise figure: NFrl.5dB typ f=0.9GHz .

Contextual Info: Ordering num ber: E N 3964 FC149 No.3964 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications F eatures •Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

transistor BF 451

Abstract: transistor BLC
Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 4 2 5 1 U nit in mm TV TUNER, VHF O SCILLATO R APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent

Contextual Info: Ordering number : EN 5053 FX803 TR : N PN Epitaxial P lan ar Silicon T ransistor SBD : Schottky B arrier Diode Twin Type • Cathode Common DC-DC Converter F e a tu r e s • Complex type of a low saturation voltage, high speed switching and large current NPN transistor and

Contextual Info: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.