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    TRANSISTOR BH Search Results

    TRANSISTOR BH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A

    TRANSISTOR SMD MARKING CODE 702

    Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA

    transistor smd marking KA

    Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL

    transistor smd marking KA

    Abstract: No abstract text available
    Text: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1127E REJ03G0839-0100 ADE-208-1540) 2SC5700 2SC5849 PXSF0006LA-A transistor smd marking KA

    Untitled

    Abstract: No abstract text available
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


    Original     		PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A

    702 TRANSISTOR smd

    Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
    Text: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor


    Original     		PDF HTT1129E REJ03G0840-0200 ADE-208-1541A) 2SC5849 2SC5872 PXSF0006LA-A 702 TRANSISTOR smd transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC

    HAT1058C

    Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,


    Original     		PDF notic50 SON3024-8 HAT1062G ADE-A08-003Q HAT1058C HAT2106G HAT1068C Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23

    702 TRANSISTOR smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 702 smd transistor FR MARKING SMD TRANSISTOR TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 transistor smd marking KA smd marking 702 2SC5700 2SC5757
    Text: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor


    Original     		PDF HTT1115E REJ03G0838-0200 ADE-208-1439A) 2SC5700 2SC5757 PXSF0006LA-A 702 TRANSISTOR smd TRANSISTOR SMD MARKING CODE 702 702 smd transistor FR MARKING SMD TRANSISTOR TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE A1 transistor smd marking KA smd marking 702 2SC5700 2SC5757

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX95 7Z66943

    MSB11900Y

    Abstract: philips ic power amplifier
    Text: N AMER PH ILIPS/DI SCRE TE OLE D • bh53iBl DDlSQb? & ■ MSB11900Y T - 3 3 - is r PULSED M ICROW AVE PO W ER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at


    OCR Scan     		PDF bb53T31 MSB11900Y T-33-isr 2x160 MSB11900Y T-33-& philips ic power amplifier

    R T O BH TRANSISTOR

    Abstract: 2SC5168 transistor CR NPN
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.


    OCR Scan     		PDF 2SC5168 2SC5168 100mV 250to800 270Hz X10-3 R T O BH TRANSISTOR transistor CR NPN

    Transistor marking S

    Abstract: BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W
    Text: bhSa^l P hilip s Sem iconductors 002M443 STT IAPX Product specification PNP general purpose transistor BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES b?E PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323


    OCR Scan     		PDF LhS3T31 002M443 BC807W; BC808W OT323 OT323 MAM037 BC807W: BC807-16W BC807-25W Transistor marking S BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W

    MCN transistor

    Abstract: BSS44
    Text: SGS-TtiOMSON »eiamtieìMoes BSS44 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BSS44 is a silicon epitaxial planar PNP transistor in Jedec TO-39 metal case. It is used for high-current switching and power applications


    OCR Scan     		PDF BSS44 BSS44 MCN transistor

    Untitled

    Abstract: No abstract text available
    Text: N AUER PH ILIPS/DISCRETE fc,TE ]> • bhSSTSl 00 263 27 03S * A P X Philips Product specification Silicon diffused power transistor BU1508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack


    OCR Scan     		PDF BU1508AX bbS3T31 OT186A;

    MRB12350YR

    Abstract: IEC134 MRB11350Y 67A MARKING
    Text: A N AMER PHILIPS/DISCRETE m bhS3T31 00150bl 7 • OLE D MRB12350YR MAINTENANCE TYPE for new design use MRB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in


    OCR Scan     		PDF MRB11350Y) bh53T31 00150bl MRB12350YR IEC134) IEC134 MRB11350Y 67A MARKING

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - DISPLAY DRIVERS MTE2075 14-Lead DIP, See Diag. 247 5-Stage Transistor Array "/Strobe NTE2077 14-Lead DIP, See Diag. 247 6-Stage Darlington Transistor Array W/Clamp Diode NTE2078, 14-Lead DIP, See Diag. 247 NTE2084 5-Stage Darlington Transistor Array


    OCR Scan     		PDF MTE2075 14-Lead NTE2077 NTE2078, NTE2084 NTE2079 16-Lead NTE2080

    Untitled

    Abstract: No abstract text available
    Text: 1-1 N AMER PHILIPS/DISCRETE DhE D • bhS3T31 DQ1S247 T ■ RZ2833B30W MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.


    OCR Scan     		PDF bhS3T31 DQ1S247 RZ2833B30W

    BUK456-60H

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL fc.5E D m 711QÔ2b Q Q b m i l bHH W P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is intended for use in


    OCR Scan     		PDF BUK456-60H T0220AB

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 5SE D bhS3cm □020570 ^ PowerMOS transistor Logic Level FET BUK542-60A BUK542-60B r - 3^-09 SYMBOL CO N-channel enhancem ent mode logic level field-effect power transistor in a plastic full-pack envelope. Th e device is intended for use in


    OCR Scan     		PDF BUK542-60A BUK542-60B

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE ]> • bbsa'm 005770^ asb APX Bh92b JV SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage open emitter


    OCR Scan     		PDF Bh92b

    Untitled

    Abstract: No abstract text available
    Text: QUAD TRANSISTOR ARRAYS Series T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQ2222A TPQ3904 TPQ2907A 2N2222 TPQ3906 TPQ6502

    transistor 2222a

    Abstract: No abstract text available
    Text: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most


    OCR Scan     		PDF 14-pin TPQA06 TPQA55 TPQA56 PSA55 PSA56 2N2907 2N3904 2N3906 transistor 2222a