TRANSISTOR BFW 10 Search Results

BFW92

Contextual Info: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration

TRANSISTOR BFW 11

Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Contextual Info: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use

TRANSISTOR BFW 11

Abstract: BFW92 Transistor BFw 92 bfw 10 transistor transistor BFW 10 bfw 16 transistor BFW 100 transistor "RF Amplifiers" Q62702-F321 BFW 92
Contextual Info: BFW92 NPN Silicon planar RF transistor BFW 92 is an epitaxial NPN silicon planar RF transistor in a plastic package 50 B 3 DIN 41867 fo r use as RF am plifiers up in to the GHz range, e.g. fo r broadband antenna amplifiers. T ype O rd e r n u m b e r BFW 92

BFW30

Abstract: bfw 10 transistor bfw 30 transistor transistor BFW 10
Contextual Info: BFW 30 NPN Silicon planar RF transistor BFW 30 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 TO-72 , designed for universal application up into the GH z range, e.g. for vertical amplifiers in broadband oscillographs and for broadband antenna amplifiers. Terminals

TRANSISTOR b 772 p

Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for

Contextual Info: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers

Transistor BFw 92

Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
Contextual Info: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain

BFW16A

Abstract: bfw16 transistor bfw16a BFW 16
Contextual Info: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V

BFW92

Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,

BFW16

Abstract: TRANSISTOR BFW 16 bfw 10 transistor BFW16A application of transistor BFW 10 TRANSISTOR BFW 11 Q62702-F319 transistor bfw16a t 326 Transistor bfw 16 transistor
Contextual Info: B F W 1 6A NPN Silicon planar RF transistor BFW 16 A is an epitaxial NPN silicon planar RF transistor in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. This transistor is designed for universal application up into the GHz range, e.g. for driver and output stages of

TRANSISTOR BFW 11

Abstract: BFW93 C11B
Contextual Info: BFW 93 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L VHF-UHF applications. Wide band aerial amplifiers Applications VHF-UHF. Am plificateurs fantenne & large bands V CEO 10 V 'c m 100 mA h2iE<!30 mA 25 f j ( 5 0 imA)

Contextual Info: Philips Semiconductors H bb53T31 0D32142 T34 M A P X _Product specification NPN 3 GHz w ideband transistor ^ BFW 92A N AllER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in amplifiers in the 40 to 860 MHz

BFW16A

Abstract: TRANSISTOR BFW 16 Q62702-F319
Contextual Info: N P IS I-S iliz iu m -P la n a r-H F -T ra n sisto r BFW 16A BFW 16 A ist ein epitaktischer NPN-Silizium -Planar-HF-Transistor im Gehäuse 5 C3 DIN 41873 T O -39 für allgemeine Verwendung bis in den GHz-Bereich z. B. für Treiber- und Endstufen von Kanal- und Bereichsantennenverstärkern bis Bereich V, sowie für Vertikalverstärker-Endstufen in Breitband-Oszillografen. Der Kollektor ist mit dem Gehäuse leitend

Transistor BFw 92

Abstract: TRANSISTOR BFW 11 BFW92 transistor bfw 88 BFw 94
Contextual Info: BFW 92 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings

TRANSISTOR BFW 11

Abstract: din 867 BFw 92 BFW 100 transistor Q62702-F321 bfw92
Contextual Info: IM P IM -Siliziu m -P lan ar-H F -T ran sisto r B F W 92 BFW 92 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B 3 DIN 41 867 T-Bauform ähnlich T 0 -50 , für Verwendung als HF-Verstärker bis in den GHz-Bereich, z.B. für Breitbandantennenverstärker.

BFW92

Contextual Info: Temic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F am plifier up to G H z range. Features • High pow er gain • Low noise figure B FW 92 M arking: BFW 92 Plastic case TO 50 1= C ollector; 2= Em itter; 3= Base Absolute Maximum Ratings

BFY90 PHILIPS

Abstract: BFW92 sot23 IEC-134 BFS17 BFW92 BFY90 IEC134 X3A-BFW92 philips bfw92
Contextual Info: P rodu ct specification P h ilip s S em icon du ctors NPN 1 GHz wideband transistor crystal PH IL IP S I N T E R N A T I O N A L SbE X3A-BFW92 711Dfl2b O D M b l l O 7Tb IPHIN M EC H A N IC A L DATA DESCRIPTION Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)

TRANSISTOR BFW 16

Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,

Q62702-F320

Abstract: BFW 72
Contextual Info: N P IM -S iliz iu m -P la n a r-H F -T ra n sisto r B F W 30 BFW 30 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z.B. für Vertikal­ verstärker in Breitband-Oszillografen und für Breitband-Antennenverstärker. Die Anschlüsse

BFW30

Abstract: BFW 30
Contextual Info: BFW 30 N P N S IL IC O N T R A N S IS T O R , E P IT A X IA L P L A N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L W ide band vertical am p lifiers in high speed oscilloscope W ide band aerial am p lifiers Television d istrib u tio n a m p lifiers

transistor BD 540

Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Contextual Info: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches

BLW16

Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
Contextual Info: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V

blw 30 or bfw 30

Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Contextual Info: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­