TRANSISTOR BD139 N Search Results

TRANSISTOR BD139 N Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BD139 N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BD139G Abstract: BD139L BD139 NPN TRANSISTOR NPN BD139 power transistor bd139 BD139 BD139 NPN transistor MAX15A BD139 N TRANSISTOR BD139 Text: UNISONIC TECHNOLOGIES CO., LTD BD139 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES 1 * High current max.1.5A * Low voltage (max.80V) TO-251 1 TO-126 Lead-free: BD139L Halogen-free: BD139G ORDERING INFORMATION Normal BD139-T60-K BD139-TM3-T	Original	BD139 O-251 O-126 BD139L BD139G BD139-T60-K BD139-TM3-T BD139L-T60-K BD139L-TM3-T BD139G-T60-K BD139G BD139L BD139 NPN TRANSISTOR NPN BD139 power transistor bd139 BD139 BD139 NPN transistor MAX15A BD139 N TRANSISTOR BD139	PDF
bd139 Abstract: bd137 bd135 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor Text: BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER	Original	BD135 BD137 BD139 BD135, BD137, O-126 Tmb70 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor	PDF
transistor BD139 N Abstract: TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 TRANSISTOR NPN BD140 bd139 data sheet BD139 transistor BD139 NPN transistor download datasheet Text: BD135 BD137/BD139 NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi	Original	BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. transistor BD139 N TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 TRANSISTOR NPN BD140 bd139 data sheet BD139 transistor BD139 NPN transistor download datasheet	PDF
BD135,BD137,BD139 Abstract: BD139 TRANSISTOR NPN BD139 BD139 amplifier BD139 NPN rBE BD135 BD135 BD137 Text: BD135, BD137, BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage	Original	BD135, BD137, BD139 O-126 BD135 BD137 BD135 BD137 BD135,BD137,BD139 BD139 TRANSISTOR NPN BD139 BD139 amplifier BD139 NPN rBE BD135	PDF
BD135 Abstract: power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135 Text: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135	Original	BD135/137/139 O-126 BD136, BD138 BD140 BD135 BD137 BD139 BD135 power transistor bd139 power transistor bd135 transistor bd137 power transistor bd137 BD139 NPN transistor BD137 BD139 TRANSISTOR NPN BD139 NPN POWER transistor BD135	PDF
transistor BD 141 Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	BD135, BD137, BD139 BD139 BD135 BD137 transistor BD 141 BD139G bd139 140 BD139-25 BD139 NPN transistor operation of BD 139 bd135 diagram	PDF
TRANSISTOR BD 136 Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 Text: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140	PDF
bd135 TRANSISTOR REPLACEMENT GUIDE Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc	Original	BD135 BD137 BD139 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B bd135 TRANSISTOR REPLACEMENT GUIDE transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary	PDF
BD139 Abstract: BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD136 BD137 BD140 bd139 Complement Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135	Original	KSD135/137/139 O-126 BD136 BD140 BD135 BD137 BD139 BD139 BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD137 bd139 Complement	PDF
BD139 PIN DIAGRAM Abstract: CIRCUIT DIAGRAM OF BD139 140 CIRCUIT DIAGRAM OF BD135 bd139 pin out CIRCUIT DIAGRAM OF BD139 BD139 h parameters BD137 parameters BD137G BD139 transistor circuit diagram BD139G Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	BD135, BD137, BD139 BD135 BD137 BD135/D BD139 PIN DIAGRAM CIRCUIT DIAGRAM OF BD139 140 CIRCUIT DIAGRAM OF BD135 bd139 pin out CIRCUIT DIAGRAM OF BD139 BD139 h parameters BD137 parameters BD137G BD139 transistor circuit diagram BD139G	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR（NPN） TO-126 FEATURES •High Current 1.5A 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA	PDF
Untitled Abstract: No abstract text available Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES High current max.1.5A Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS	Original	BD139 O-251 150mA 500mA 150mA, 100MHz QW-R213-010	PDF
BD139 amplifier Abstract: rBE BD135 BD135 BD137 BD139 BD139 NPN transistor Text: BD135…BD139 NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol BD135 BD137 BD139 Unit Collector Emitter Voltage VCEO 45 60	Original	BD135. BD139 O-126 BD135 BD137 25CEO BD137 500mA, BD139 amplifier rBE BD135 BD139 BD139 NPN transistor	PDF
BD 140 transistor Abstract: transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D Text: ON Semiconductor BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	BD135/D r14525 BD 140 transistor transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D	PDF

BD139 application Abstract: BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES High current max.1.5A Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS	Original	BD139 O-251 QW-R213-010 BD139 application BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn	PDF
BD135 Abstract: BD135 BD137 BD139 Text: BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 2Collector 3Base CLASSIFICATION OF hFE 1	Original	BD135 BD137 BD139 O-126 BD136, BD138 BD140 BD135-6 BD135-10 BD135-16 BD135 BD137 BD139	PDF
BD139 Abstract: BD135 BD137 Text: BD135/137/139 TO-126 1 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD135 : BD137 : BD139 Value 45 60 80 Units V V V VCEO Collector-Emitter Voltage : BD135 : BD137	Original	BD135/137/139 O-126 BD135 BD137 BD139 BD139 BD135 BD137	PDF
BD139 transistor Abstract: BD139 power transistor bd139 TRANSISTOR NPN BD139 of bd139 BD135 power transistor bd137 bd137 Transistor transistor bd137 BD135 NPN transistor Text: Transys Electronics L I M I T E D TO-126 Plastic-Encapsulated Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Operating and storage junction temperature range	Original	O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 BD139 transistor BD139 power transistor bd139 TRANSISTOR NPN BD139 of bd139 BD135 power transistor bd137 bd137 Transistor transistor bd137 BD135 NPN transistor	PDF
BD139 Abstract: BD136 BD135 BD137 BD138 BD140 bd140 Complement Text: BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD136/138/140 BD135, BD137 BD139 O-126 BD136 BD138 BD140 BD136 BD135 BD138 BD140 bd140 Complement	PDF
Untitled Abstract: No abstract text available Text: BD136/138/140 BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD136/138/140 BD135, BD137 BD139 O-126 BD136 BD138 BD140	PDF
Untitled Abstract: No abstract text available Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES High current max.1.5A Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS	Original	BD139 O-126 BD139-10 BD139-16 150mA 500mA 150mA, 100MHz QW-R204-007	PDF
BD139 transistor Abstract: BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Operating and storage junction temperature range	Original	O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 BD139 transistor BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES •High Current(1.5A) 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted )	Original	O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA	PDF
Untitled Abstract: No abstract text available Text: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD137 60 V : BD139 80 V 45 V : BD137 60 V : BD139 80	OCR Scan	KSD135/137/139 BD140 BD137 BD139 BD135 BD137,	PDF

TRANSISTOR BD139 N Search Results

TRANSISTOR BD139 N Result Highlights (5)

TRANSISTOR BD139 N Datasheets Context Search

BD139G

bd139

transistor BD139 N

BD135,BD137,BD139

BD135

transistor BD 141

TRANSISTOR BD 136

bd135 TRANSISTOR REPLACEMENT GUIDE

BD139

BD139 PIN DIAGRAM

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BD139 amplifier

BD 140 transistor

BD139 application

BD135

BD139

BD139 transistor

BD139

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BD139 transistor

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