TRANSISTOR BD 386 Search Results

TRANSISTOR BD 386 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD 386 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor bd 370 Abstract: 30240 MMJT350T1 Text: ON Semiconductort MMJT350T1 Bipolar Power Transistors PNP Silicon 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 2.75 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring	Original	PDF	MMJT350T1 r14525 MMJT350T1/D transistor bd 370 30240 MMJT350T1
Untitled Abstract: No abstract text available Text: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus = 300 Vdc @ IC	Original	PDF	MMJT350T1 OT-223 MMJT350T1/D
AYW marking code IC Abstract: BFr pnp transistor MMJT350T1G T350 306 marking code transistor Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −	Original	PDF	MMJT350T1G OT-223 MMJT350T1/D AYW marking code IC BFr pnp transistor MMJT350T1G T350 306 marking code transistor
T350 sot223 Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR	Original	PDF	MMJT350T1 OT-223 MMJT350T1/D T350 sot223 AYW marking code IC t350 MMJT350T1 MMJT350T1G
Untitled Abstract: No abstract text available Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage	Original	PDF	MMJT350T1G AEC-Q101 OT-223 MMJT350T1/D
SMMJT350T1G Abstract: marking code E3 sot223 306 marking code transistor Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −	Original	PDF	MMJT350T1G, SMMJT350T1G AEC-Q101 MMJT350T1/D marking code E3 sot223 306 marking code transistor
MMJT Abstract: No abstract text available Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −	Original	PDF	MMJT350T1G, SMMJT350T1G MMJT350T1/D MMJT
BD 140 transistor Abstract: transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D Text: ON Semiconductor BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	PDF	BD135/D r14525 BD 140 transistor transistor BD 140 BD 139 140 BD139 h parameters BD NPN transistors BD139 power transistor bd139 transistor bd 138 BD 139 transistor BD135-D
bd140 pin out Abstract: BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140 Text: ON Semiconductor BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS	Original	PDF	BD136 BD138 BD140 BD140-10 225AA r14525 BD136/D bd140 pin out BD140 application circuits circuits TRANSISTOR BD140 BD140-10 BD 266 S BD 140 transistor bd 138 application circuit BD136 BD138 BD140
BD140-10 Abstract: BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137 Text: ON Semiconductort BD136 BD138 BD140 BD140-10 Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS	Original	PDF	BD136/D r14525 BD140-10 BD136 BD140 application circuits circuits of ic BD140 BD136-D BD138 BD140 bd138 hfe transistor bd 137
TRANSISTOR BD 136 Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140 Text: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS	Original	PDF	BD135/D r14525 TRANSISTOR BD 136 BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
Untitled Abstract: No abstract text available Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS	Original	PDF	MMJT9410 OT-223 MMJT9410/D
MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	PDF	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G
Untitled Abstract: No abstract text available Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc http://onsemi.com • High DC Current Gain − • • • • • POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS	Original	PDF	MMJT9410 MMJT9410/D

MMJT9410 Abstract: MMJT9410G Text: MMJT9410 Preferred Device Bipolar Power Transistors NPN Silicon Features • Collector −Emitter Sustaining Voltage − • • • • • • http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − hFE = 85 (Min) @ IC = 0.8 Adc	Original	PDF	MMJT9410 OT-223 MMJT9410/D MMJT9410 MMJT9410G
9435 transistor Abstract: 9435a 8 pin ic 9435 9435, ic ic 9435 amp 9435 9435 sot 9435 63 CIRCUIT DIAGRAM T 9435 MMJT9435 Text: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS	Original	PDF	MMJT9435 OT-223 OT-223 MMJT9435/D 9435 transistor 9435a 8 pin ic 9435 9435, ic ic 9435 amp 9435 9435 sot 9435 63 CIRCUIT DIAGRAM T 9435 MMJT9435
MMJT9410 Abstract: power bjt Text: ON Semiconductort MMJT9410 Bipolar Power Transistors ON Semiconductor Preferred Device NPN Silicon POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS • Collector –Emitter Sustaining Voltage — VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain —	Original	PDF	MMJT9410 r14525 MMJT9410/D MMJT9410 power bjt
BD139 PIN DIAGRAM Abstract: CIRCUIT DIAGRAM OF BD139 140 CIRCUIT DIAGRAM OF BD135 bd139 pin out CIRCUIT DIAGRAM OF BD139 BD139 h parameters BD137 parameters BD137G BD139 transistor circuit diagram BD139G Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	PDF	BD135, BD137, BD139 BD135 BD137 BD135/D BD139 PIN DIAGRAM CIRCUIT DIAGRAM OF BD139 140 CIRCUIT DIAGRAM OF BD135 bd139 pin out CIRCUIT DIAGRAM OF BD139 BD139 h parameters BD137 parameters BD137G BD139 transistor circuit diagram BD139G
BD140 application circuits circuits Abstract: bd140 pin out TO-225AA BD 140 transistor BD 139 140 BD136G BD136-D BD136 pin transistor bd 138 power transistor audio amplifier 500 watts Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	PDF	BD136, BD138, BD140 BD136 BD138 BD136/D BD140 application circuits circuits bd140 pin out TO-225AA BD 140 transistor BD 139 140 BD136G BD136-D BD136 pin transistor bd 138 power transistor audio amplifier 500 watts
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	PDF	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
BD136 Abstract: BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	PDF	BD136, BD138, BD140 BD136 BD138 O-225 BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G
BD139 h parameters Abstract: BD139 PIN DIAGRAM BD139 transistor circuit diagram CIRCUIT DIAGRAM OF BD135 BD139 PIN DATA BD135-BD137-BD139 transistor BD139 N BD137 parameters BD139G BD139-25 Text: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features	Original	PDF	BD135, BD137, BD139 BD135/D BD139 h parameters BD139 PIN DIAGRAM BD139 transistor circuit diagram CIRCUIT DIAGRAM OF BD135 BD139 PIN DATA BD135-BD137-BD139 transistor BD139 N BD137 parameters BD139G BD139-25
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	PDF	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF

TRANSISTOR BD 386 Search Results

TRANSISTOR BD 386 Result Highlights (5)

TRANSISTOR BD 386 Datasheets Context Search

transistor bd 370

Untitled

AYW marking code IC

T350 sot223

Untitled

SMMJT350T1G

MMJT

BD 140 transistor

bd140 pin out

BD140-10

TRANSISTOR BD 136

Untitled

MMJT9410

Untitled

MMJT9410

9435 transistor

MMJT9410

BD139 PIN DIAGRAM

BD140 application circuits circuits

ph 4148 zener diode

BD136

BD139 h parameters

D 5038 Transistor Horizontal

2sb504