TRANSISTOR BD 239 Search Results

TRANSISTOR BD 239 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD 239 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
pin configuration transistor bd140 Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139	Original	PDF	BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S50 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating	Original	PDF	IB1012S50 IB1012S50 IB1012S50-REV-NC-DS-REV-A
tegra 2 Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255 Text: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C	Original	PDF	IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-A tegra 2 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
bd 36 930 Abstract: No abstract text available Text: Integra Part Number: IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 MHz. While operating in class C mode this common base device supplies a	Original	PDF	IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-B bd 36 930
ph 4148 zener diode Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148 Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS	Original	PDF	DN-40 74ABT126 74ABT2240 X3G-BZX84-C7V5 X3G-BZX84-C9V1 ph 4148 zener diode philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Keithley s900 Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.	Original	PDF	RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
BD240 Abstract: BD240C BD240A BD240B Text: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector-E m itter Voltage : BD240 :BD240A :BD240B :BD240C C ollector Em itter Voltage : BD240	OCR Scan	PDF	BD240/A/B/C BD239/A/B/C BD240 BD240A BD240B BD240C BD240 BD240C BD240A BD240B
Untitled Abstract: No abstract text available Text: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector-E m itter V oltage : BD240 :BD240A :BD240B :BD240C C ollector Em itter V oltage : BD240	OCR Scan	PDF	BD240/A/B/C 239/A/B/C BD240 BD240A BD240B BD240C
transistor D 2394 Abstract: f173 fp302 Text: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.	OCR Scan	PDF	FP302 FP302 2SC4520 SB05-05CP, 470//F transistor D 2394 f173
Untitled Abstract: No abstract text available Text: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V C ollector-E m itter Voltage : BD239	OCR Scan	PDF	BD239/A/B/C 240/A/B/C BD239A BD239B BD239C BD239
BD239C Abstract: BD239A BD239B BD239 Text: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V C ollector-E m itter Voltage : BD239	OCR Scan	PDF	BD239/A/B/C BD240/A/B/C BD239 BD239A BD239B BD239C BD239C BD239A BD239B BD239
BD139 Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors Text: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data	OCR Scan	PDF	BD139 40PEP 80PEP OT-32 OT-32 O-66P BD139 transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
bd 241a transistor Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11 Text: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 \| Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A	OCR Scan	PDF	T0-220B O-220B -220B to-02 melf-002. bd 241a transistor BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
transistor BD 246 Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A	OCR Scan	PDF	BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments

BDX 241 Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137 Text: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A	OCR Scan	PDF	BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
c2688 L Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A Text: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current	OCR Scan	PDF	TIP29, TIP29A, TIP29B, TIP29C TIP30, TIP30A, TIP30B, TIP30C TIP29 TIP29A c2688 L TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan	PDF
D 5038 Transistor Horizontal Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58 Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching	OCR Scan	PDF	CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
TIP 29 transistor Abstract: TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor Text: TYPES TIP32, TIP32A, TIP32B, TIP32C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMP.LIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS D ESIGN ED FO R CO M PLEM EN TARY USE WITH TIP31, TIP31A, TIP31B, TIP31C • 40 W at 25°C Case Temperature	OCR Scan	PDF	TIP32, T1P32A, TIP32B. TIP32C TIP31, TIP31A, TIP31B, TIP31C TIP32 TIP32A TIP 29 transistor TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
50t65 Abstract: bd650 BD644 Text: BD644; 646; 648 BD650; 652 J SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a m onolithic Darlington circuit. They are housed in a TO-220 envelope and intended fo r applications such as audio output stages, switching, and general amplifiers.	OCR Scan	PDF	BD644; BD650; O-220 BD643, BD645, BD647, BD651. BD644 50t65 bd650 BD644
b0239c Abstract: 8D239C BD 239A Text: M OT OR OL A SC XS TR S /R F M E D \| b3b7aS1 MOTOROLA SEMICONDUCTOR TECHNfCAL DATA COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS OOS472S 1 \| NPN PNP BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C 2 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON «. . designed for use in general purpose amplifier and switching	OCR Scan	PDF	OOS472S BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C O-220 b0239c 8D239C BD 239A
bpx28 Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34 Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten	OCR Scan	PDF

TRANSISTOR BD 239 Search Results

TRANSISTOR BD 239 Result Highlights (5)

TRANSISTOR BD 239 Datasheets Context Search

pin configuration transistor bd140

Untitled

tegra 2

bd 36 930

ph 4148 zener diode

Keithley s900

BD240

Untitled

transistor D 2394

Untitled

BD239C

BD139

bd 241a transistor

transistor BD 246

BDX 241

bc 540

c2688 L

transistor kt 326

D 5038 Transistor Horizontal

TIP 29 transistor

2sb504

50t65

b0239c

bpx28