TRANSISTOR BCW61C Search Results

TRANSISTOR BCW61C Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR BCW61C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TRANSISTORS BJT bc548 Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002	Original	OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302	PDF
transistor 99011 Abstract: marking 1c BCW61C MMBT5086 L0032 Text: » , SAMSUNG S E M I C O N D U C T O R . INC ! mE o I 0007214 t J[ PNP EPITAXIAL SILICON TRANSISTOR BCW61C GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collectcir-Base Voltage Colleotor-Emitter Voltage Emitter-Base Voltage	OCR Scan	BCW61C MMBT5086 OT-23 transistor 99011 marking 1c BCW61C L0032	PDF
transistor mark BA Abstract: No abstract text available Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol	OCR Scan	BCW61A/B/C/D MMBT5086 BCW61 BCW61C BCW61D BCW61B transistor mark BA	PDF
BCW61A Abstract: transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D ks5086 Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	Original	BCW61A/B/C/D OT-23 KS5086 BCW61B BCW61C BCW61D BCW61A BCW61A transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D	PDF
42t sot-23 Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715 Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen	OCR Scan	BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715	PDF
BCW61A Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	Original	BCW61A/B/C/D OT-23 KS5086 BCW61A marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sot 23 marking code 2t Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is	OCR Scan	OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR	PDF
transistor bc 537 Abstract: BCW61A BCW61C TRANSISTOR BV 32 BD marking BCW61D Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Characteristic SOT-23 T a = 2 5 T : Symbol Rating Unit VcBO VcEO -32 -32 -5.0 -100 350 -55-150 V Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage	OCR Scan	BCW61A/B/C/D KST5086 OT-23 BCW61B BCW61C BCW61D BCW61A transistor bc 537 TRANSISTOR BV 32 BD marking	PDF
Analog devices TOP marking Information Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23 Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO	Original	BCW61A/B/C/D OT-23 KST5086 OT-23 BCW61AMTF Analog devices TOP marking Information marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23	PDF
marking B22 sot-23 Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086 Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO	Original	BCW61A/B/C/D OT-23 KST5086 marking B22 sot-23 bc 2001 transistor BCW61A BCW61B BCW61C BCW61D	PDF
Untitled Abstract: No abstract text available Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a r a c t e r is t i c Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature	OCR Scan	BCW61A/B/C/D OT-23 KS5086 BCW61B BCW61C BCW61 BCW61A BCW61B -10mA, -50mA,	PDF
transistor smd marking BA Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b Text: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05	Original	BCW61A/B/C/D OT-23 BCW61B BCW61C BCW61D BCW61A transistor smd marking BA transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b	PDF
bc 357 transistor Abstract: bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC BD 140 transistor PNP Epitaxial Silicon Transistor sot-23 transistor BC 55 transistor BD 140 BCW61D Text: BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,	Original	BCW61B BCW61C BCW61D OT-23 200Hz bc 357 transistor bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC BD 140 transistor PNP Epitaxial Silicon Transistor sot-23 transistor BC 55 transistor BD 140 BCW61D	PDF

Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61C SOT-23 TRANSISTOR PNP FEATURES 1. BASE Power dissipation 2. EMITTER 3. COLLECTOR AXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units	Original	OT-23 BCW61C OT-23 -50mA -50mA, -10mA 100MHz	PDF
BCW61C Abstract: 10A40 marking bc Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61C SOT-23 TRANSISTOR PNP FEATURES z Low current z Low voltage 1. BASE 2. EMITTER 3. COLLECTOR AXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 BCW61C OT-23 -50mA, -50mA -10mA 100MHz BCW61C 10A40 marking bc	PDF
pnp low saturation transistor sot23 Abstract: transistor sot23 pf MARKING bc SOT-23 Text: BCW61C SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low current Low voltage AXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage -32 V VCEO Collector-Emitter Voltage -32	Original	OT-23 BCW61C OT-23 -50mA -50mA, -50mA -10mA 100MHz pnp low saturation transistor sot23 transistor sot23 pf MARKING bc SOT-23	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 BCW61C TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: -0.1 A	Original	OT-23 BCW61C Collec00 037TPY 950TPY 550REF 022REF	PDF
100MHZ Abstract: BCW61C Text: RECTRON BCW61C SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.25 W (Tamb =25OC) SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed	Original	BCW61C OT-23 OT-23 MIL-STD-202E 100MHZ BCW61C	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BCW61C SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.1 A ICM: Collector-base voltage	Original	OT-23 BCW61C OT-23 -50mA -50mA, -10mA 100MHz	PDF
bc 357 transistor Abstract: BCW61C-BC BCW61C transistor BC SERIES transistor BC 55 BCW61B BCW61D BC transistor series transistor W-32 Bcw61d sot23 Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise	Original	BCW61B BCW61C BCW61D BCW61B OT-23 bc 357 transistor BCW61C-BC BCW61C transistor BC SERIES transistor BC 55 BCW61D BC transistor series transistor W-32 Bcw61d sot23	PDF
Untitled Abstract: No abstract text available Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise	Original	BCW61B BCW61C BCW61D BCW61B OT-23	PDF
rds035 Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198 Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW	Original	RHU002N06 2SD2167 56to270 2SB1132 2SD1664 82to390 2SB1188 2SD1766 2SB1182 2SD1758 rds035 rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198	PDF
TRANSISTOR NPN BA RV SOT - 89 Abstract: bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124 Text: Selection Guide Page Small Signal Transistors 44 Small Signal DMOS FETs 55 Junction FETs 56 Digital Transistor 56 Power Transistors 57 Switching Diodes 60 Schottky Diodes 63 Low Leakage Diodes 66 Ultra Low Leakage Diodes 66 Stabistor Diodes 67 Zener Diodes	OCR Scan	CQ89N CQ89DS CQ89MS CQ89NS OT-89 CMPSS061 CMPS5062 CMPS5063 CMPS5064 CZS5064 TRANSISTOR NPN BA RV SOT - 89 bc816 transistor ZT 2222a BO338 CMPSH-3SE 2222A transistors NPN 800V 900 watt 3a TR 3906 PNP SM BG SOT26 CMPZ4124	PDF

TRANSISTOR BCW61C Search Results

TRANSISTOR BCW61C Result Highlights (5)

TRANSISTOR BCW61C Datasheets Context Search

TRANSISTORS BJT bc548

transistor 99011

transistor mark BA

BCW61A

42t sot-23

BCW61A

y51 h 120c

sot 23 marking code 2t

transistor bc 537

Analog devices TOP marking Information

marking B22 sot-23

Untitled

transistor smd marking BA

bc 357 transistor

Untitled

BCW61C

pnp low saturation transistor sot23

Untitled

100MHZ

Untitled

bc 357 transistor

Untitled

rds035

TRANSISTOR NPN BA RV SOT - 89