Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BC637 OR BC639 Search Results

    TRANSISTOR BC637 OR BC639 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC637 OR BC639 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bc639

    Abstract: BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639


    Original     		M3D186 BC635; BC637; BC639 BC636, BC638 BC640. bc639 BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10 PDF

    BC635 TRANSISTOR E C B

    Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


    Original     		M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC635 TRANSISTOR E C B BC635 BC635-10 BC636 BC637 BC637-10 BC639 BC640 BC635 application note PDF

    transistor c63716

    Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
    Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


    Original     		BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 transistor c63716 c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52 PDF

    BC640

    Abstract: BC635 BC635-16 BC636 BC637 BC637-16 BC638 BC639 BC639-10 BC639-16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V).


    Original     		BC635; BC637; BC639 BC636, BC638 BC640. MAM259 SCA63 115002/00/03/pp8 BC640 BC635 BC635-16 BC636 BC637 BC637-16 BC639 BC639-10 BC639-16 PDF

    transistor bC640 OF CDIL

    Abstract: BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP TO-92 Plastic Package E CB Driver Stages of Audio Amplifiers Applications


    Original     		QSC/L-000019 BC635 BC637 BC639 BC636 BC638 BC640 BC636, BC638, transistor bC640 OF CDIL BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v PDF

    BC637

    Abstract: BC639 BC635 BC635-16 BC636 BC637-16 BC638 BC639-10 BC640 bc639 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639


    Original     		M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC637 BC639 BC635 BC635-16 BC636 BC637-16 BC639-10 BC640 bc639 philips PDF

    NPN transistor ECB TO-92

    Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 NPN transistor ECB TO-92 Bc637 BC635 ECB transistor C 639 W transistor BC637 complement PDF

    bc639

    Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild PDF

    bc736

    Abstract: transistor C 639 W bc639 BC635 BC637
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


    Original     		BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 transistor C 639 W bc639 BC635 BC637 PDF

    bc635

    Abstract: transistor C 639 W
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc635 transistor C 639 W PDF

    Untitled

    Abstract: No abstract text available
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 PDF

    BC635

    Abstract: bc639 BC637
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 BC635 bc639 BC637 PDF

    transistor C 639 W

    Abstract: No abstract text available
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 transistor C 639 W PDF

    bc736

    Abstract: BC635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 BC635 BC637 BC639 PDF

    bc736

    Abstract: bc635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 bc635 BC637 BC639 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB


    Original     		BC635, BC636, 640Rev 030106E C-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB


    Original     		BC635, BC636, 640Rev 180712E C-120 PDF

    NPN Silicon Epitaxial Planar Transistor to92

    Abstract: BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB


    Original     		BC635, BC636, 640Rev 030106E C-120 NPN Silicon Epitaxial Planar Transistor to92 BC639-BC640 Transistor BC637 or BC639 BC635 BC636 BC637 BC638 BC639 BC640 transistor C 639 W PDF

    639 TRANSISTOR PNP

    Abstract: 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E CB


    Original     		BC635, BC636, C-120 BC640Rev 030106E 639 TRANSISTOR PNP 638 transistor bc636 npn transistor bc640 transistor bC640 OF CDIL transistor C 639 W BC639-BC640 NPN transistor 500ma TO-92 ts 4141 TRANSISTOR BC635 PDF

    BC635

    Abstract: BC636 BC638 BC640
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


    Original     		BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 BC636 BC638 BC640 PDF

    BC640

    Abstract: BC636 BC635 BC636-10 BC636-16 BC637 BC638 BC639 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2004 Oct 11 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		M3D186 BC636; BC638; BC640 BC635, BC637 BC639. BC640 BC636 BC635 BC636-10 BC636-16 BC638 BC639 SC-43A PDF

    24825

    Abstract: BC639 BC635 BC636 BC636-10 BC636-16 BC637 BC638 BC638-16 BC640
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC636; BC638; BC640 PNP medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification PNP medium power transistors BC636; BC638; BC640


    Original     		M3D186 BC636; BC638; BC640 BC635, BC637 BC639. 24825 BC639 BC635 BC636 BC636-10 BC636-16 BC638 BC638-16 BC640 PDF

    bc736

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639


    OCR Scan     		BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC635/637/639 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter Voltage at R be =1 Kohm C ollector Em itter Voltage C ollector Em itter Voltage


    OCR Scan     		BC636/638/640 BC635/637/639 BC636 BC638 BC640 PDF