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    TRANSISTOR BC337-25 PNP Search Results

    TRANSISTOR BC337-25 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC337-25 PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC327

    Abstract: BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note
    Text: SEMICONDUCTOR BC327 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC337. MAXIMUM RATING (Ta=25


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    PDF BC327 -800mA. -100mA) BC337. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC327 BC327 45V 800mA PNP Transistor f 630 TRANSISTOR BC327 45V 800mA NPN Transistor BC327 800mA PNP Transistor BC337 45V 800mA NPN Transistor bc327 45v 800mA pnp hFE-100 BC327 NPN transistor bc327 application note

    transistor BC327

    Abstract: BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage


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    PDF BC327/328 BC337/BC338 BC327 BC328 transistor BC327 BC307 BC327 PNP transistor download datasheet 100C BC327 BC328 BC338

    Untitled

    Abstract: No abstract text available
    Text: BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    PDF BC337â BC338 BC327 BC328 BC337 500mA, 300mA

    TRANSISTOR BC327-40

    Abstract: bc327 TRANSISTOR
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    PDF BC327/328 BC337/338 BC327 BC328 QW-R201-038 TRANSISTOR BC327-40 bc327 TRANSISTOR

    bc338

    Abstract: No abstract text available
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC327/328 BC337/BC338 BC327 BC328 BC327 bc338

    bc337 fairchild

    Abstract: BC337 pnp transistor
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC327/328 BC337/BC338 BC327 BC328 BC32ugh bc337 fairchild BC337 pnp transistor

    BC307

    Abstract: 2001 PNP TO-92
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC327/328 BC337/BC338 BC327 BC328 BC32Product BC32716TA BC307 2001 PNP TO-92

    Untitled

    Abstract: No abstract text available
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    PDF BC327/328 BC337/338 BC327 BC328 -300mA -10mA, 20MHz QW-R201-038

    BC327

    Abstract: BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337
    Text: UTC BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC337/338 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified


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    PDF BC327/328 BC337/338 BC327 BC328 QW-R201-038 BC327 BC327 PNP transistor download datasheet BC327 transistor utc BC328 328 transistor BC327 pnp transistor datasheet PNP BC327 transistor bc327 BC328 OF TRANSISTOR BC337

    BC307

    Abstract: BC338 BC327 BC328
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC327/328 BC337/BC338 BC327 BC328 BC307 BC338 BC327 BC328

    BC327

    Abstract: BC328
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    PDF BC327/328 BC337/BC338 BC327 BC328 BC327 BC328

    BC337 pnp transistor

    Abstract: BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328 BC338 BC337 hfe
    Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    PDF BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC338 BC337 hfe

    BC337

    Abstract: BC337 pnp transistor BC327 to92 OF TRANSISTOR BC337 bc33 bc338 complementary BC337 hfe OF TRANSISTOR BC338 BC337 leads BC327
    Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    PDF BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 BC337 pnp transistor BC327 to92 OF TRANSISTOR BC337 bc33 bc338 complementary BC337 hfe OF TRANSISTOR BC338 BC337 leads

    BC337 pnp transistor

    Abstract: st bc337 BC337 BC337 hfe OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337 BC327 BC328
    Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    PDF BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor st bc337 BC337 BC337 hfe OF TRANSISTOR BC338 BC337 leads bc338 complementary OF TRANSISTOR BC337

    BC337 pnp transistor

    Abstract: BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327 BC327 BC328
    Text: ST BC337… BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40,according to their DC


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    PDF BC337. BC338 BC327 BC328 BC337 500mA, 300mA BC337 pnp transistor BC337 BC337 hfe OF TRANSISTOR BC337 OF TRANSISTOR BC338 BC337 leads bc338 complementary pin configuration Bc327

    c33725 w 78

    Abstract: BC337 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


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    PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 w 78 c33725 transistor transistor NPN c337 c33740 c33716 C33740 transistor C33725 C33725 W BC817

    c33725

    Abstract: c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 05 — 21 January 2005 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1: Product overview Type number Package PNP complement Philips


    Original
    PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W c33725 c33740 C33740 NPN transistor transistor c33725 c33725 transistor BC337-40 C33740 transistor c33740 c33725 philips C33740 transistor C33740 NPN transistor datasheet

    c33725

    Abstract: c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor
    Text: BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA


    Original
    PDF BC817; BC817W; BC337 BC817 BC807 BC817W OT323 SC-70 BC807W BC337 c33725 c33740 transistor c33725 C33740 NPN transistor datasheet C33740 NPN transistor c33725 transistor transistor c33740 C33716 equivalent for c33725 C33740 transistor

    Untitled

    Abstract: No abstract text available
    Text: B C 327 SEMICONDUCTOR " TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement To Bc337 ABSOLUTE MAXIMUM RATINGS a t Tamb*25°C Symbol Rating C haracteristic Unit Collector-Emitter Voltage Vces -50 V Collector-Emitter Voltage


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    PDF Bc337 -100uA -10mA 100mA -300mA -500mA -50mA -10mA

    TRANSISTOR pnp BC328

    Abstract: BC327 BC328 BC337 pnp transistor
    Text: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage


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    PDF BC327/328 BC337/BC338 BC327 BC328 -10mA, 00250S7 TRANSISTOR pnp BC328 BC327 BC328 BC337 pnp transistor

    BC337 45V 800mA NPN Transistor

    Abstract: BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor
    Text: SEMICONDUCTOR TECHNICAL DATA BC337 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=800mA. • DC Current Gain : hFE=100-630 VCe=1V, Ic=100mA . • For Complementary with PNP type BC327. MAXIMUM RATINGS (Ta=25°C)


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    PDF BC337 800mA. 100mA) BC327. BC337 45V 800mA NPN Transistor BC327 BC337 NPN general purpose transistor BC337 BC337 pnp transistor

    BC327

    Abstract: BC307 BC328 BC338 BC337 pnp transistor
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol C ollector-E m itter Voltage


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    PDF BC327/328 BC337/BC338 BC327 BC328 -10mA, BC328 BC327 BC307 BC338 BC337 pnp transistor

    bc328c

    Abstract: lt 328
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 338 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage


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    PDF BC327/328 BC337/BC BC327 BC328 bc328c lt 328

    BC337 pnp transistor

    Abstract: TRANSISTOR BC337-25 PNP TRANSISTOR BC337-40 PNP bc3378 BC337 BC337-25 PNP transistor bc338-40 BC337A TRANSISTOR BC337-25 BC337 sot54
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC337; BC337A; BC338 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification,


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    PDF BC337; BC337A; BC338 BC327, BC327A BC328. BC337 BC337A BC337 pnp transistor TRANSISTOR BC337-25 PNP TRANSISTOR BC337-40 PNP bc3378 BC337 BC337-25 PNP transistor bc338-40 BC337A TRANSISTOR BC337-25 BC337 sot54