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    TRANSISTOR BC212 Search Results

    TRANSISTOR BC212 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC212 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    TRANSISTOR BC 413

    Abstract: 212B BC212B ic 4700 Transistor BC212B
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212B SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 1 2 3 C B E


    Original     		PDF BC212B 200uA, 200Hz Pr6897 TRANSISTOR BC 413 212B BC212B ic 4700 Transistor BC212B

    BC212L

    Abstract: No abstract text available
    Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol


    Original     		PDF BC212L 100mA, 100MHz 200Hz BC212L

    BC212L

    Abstract: No abstract text available
    Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol


    Original     		PDF BC212L 100mA, 100MHz 200Hz BC212L

    BC212L

    Abstract: No abstract text available
    Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol


    Original     		PDF BC212L 100mA, 100MHz 200Hz BC212L

    BC212L

    Abstract: No abstract text available
    Text: ST BC212L PNP Silicon Epitaxial Planar Transistor for General Purpose Amplifier On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25 OC Symbol


    Original     		PDF BC212L 100mA, 100MHz 200Hz BC212L

    BC212

    Abstract: TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC212 SILICON PNP SMALL SIGNAL TRANSISTOR BVCEO . . . . 50V Min hFE . . . . . . 60 (Min) @ VCE=5V, IC= 2mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature Operating Junction Temperature 2 3 C B E 0.135 - 0.145


    Original     		PDF BC212 200uA, 200Hz Pr6897 BC212 TRANSISTOR BC 413 Transistor BC212 TRANSISTOR BC 212

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC212 TRANSISTOR PNP 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF BC212 BC212B BC212C -100mA -10mA 100MHz

    equivalent of transistor bc212

    Abstract: BC212 data BC212 Transistor BC212 bc212* transistor
    Text: BC212 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier Absolute Maximum Ratings Ta = 25 OC Parameter 1. Emitter 2. Collector 3. Base TO-92 Plastic Package Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage


    Original     		PDF BC212 equivalent of transistor bc212 BC212 data BC212 Transistor BC212 bc212* transistor

    bc212b

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C TRANSISTOR（PNP ） FEATURES Power dissipation PCM : 0.35 Collector current ICM : -0.1 Collector-base voltage V BR CBO : -60 TO—92 W （Tamb=25℃） 1. EMITTER


    Original     		PDF BC212, -10mA 100MHz 270TYP 050TYP bc212b

    Transistor BC212B

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE


    Original     		PDF BC212, BC212 BC212B BC212C -10mA 100MHz Transistor BC212B

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors BC212, B, C FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V BR CBO: TRANSISTOR (PNP) TO-92 1. EMITTER 0.35 W (Tamb=25℃) -0.1 A 2. BASE 3. COLLECTOR -60 V 1 2 3 Operating and storage junction temperature range


    Original     		PDF BC212, BC212 BC212B BC212C -10mA 100MHz

    MJE2955

    Abstract: 2N3645 bc557 BC307 BC212
    Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu­ The facturer


    OCR Scan     		PDF O-92SP O-237 O-220 O-928> iO051 MJE2955 2N3645 bc557 BC307 BC212

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


    OCR Scan     		PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: BC212 SEMICONDUCTOR _ TECHNICAL DATA PN P EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR A B SO LU TE M A X IM U M R A T IN G S a t T a n * = 2 5 4C Sym bol R atin g C h aracteristic U nit Collector-Base Voltage V cbo -60 V Collector-Emitter Voltage V ceo


    OCR Scan     		PDF BC212 -10uA -100m -10mA 100mA -100mA 300uS

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


    OCR Scan     		PDF THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor

    BC307A

    Abstract: BC308B BC212A BC212B BC307B BC556A BC556B BC557A BCY77A BCY77B
    Text: ELECTRICAL CHARACTERISTICS a TRANSISTOR ELECTRICAL CHARACTERISTICS P.N.P. SMALL SIGNAL TRANSISTORS hpE Dice Type BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC557A BC557B BCY70 BCY79A BCY79B BCY79C BCY71 2N3905 2N3906 BC213A BC213B BC213C


    OCR Scan     		PDF BC556A BC556B BCY77A BCY77B BCY77C BC212A BC212B BC307A BC307B BC558B BC308B BC557A

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    BC212C

    Abstract: Transistor BC212 BC212
    Text: M C C X 1 TO-92 P lastic-E n cap su late T ran sisto rs BC212,B,C TRANSISTOR PNP FEAT U R E S Pcm: 0.35W (Tamb=25'C) V ( b r )c b o : - 6 0 V H M » 0 * o r a g e junction tem perature range Tj.Tsib: -55t: to + 150TC ELECTRICAL CHARACTERISTICS (Tamb=25°C u n le s s o th e rw is e


    OCR Scan     		PDF BC212 150TC BC212B BC212C 100MHz Transistor BC212

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent