fuji transistor modules
Abstract: No abstract text available
Text: HYBRID ICS FOR BASE DRIVING OF POWER TRANSISTOR MODULE Fuji Base Driver Module Hybrid IC EXB356 Abstract The EXB356 is a hybrid - IC base driver used in Fuji transistor modules. It includes opto-couplers for the electrical isolation between in-put side and output side
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EXR356
10-pin,
fuji transistor modules
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CL2102
Abstract: No abstract text available
Text: CL2102 NPN SILICON TRANSISTOR DESCRIPTION CL2102 is planar transistor use for in AF medium power drivers and outputs and switching applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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CL2102
IC-10mA
150mA
500mA
20MHz
300ftS,
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Untitled
Abstract: No abstract text available
Text: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage : KST55 : KST56 Collector-Emitter Voltage : KST55 : KST56 Emitter-Base Voltage Collector Current Collector Dissipation
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KST55/56
OT-23
KST55
KST56
KSP55
KST56
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Untitled
Abstract: No abstract text available
Text: CRO CL2102 NPN SILICON TRANSISTOR DESCRIPTION CL2102 is planar transistor use for in AF medium power drivers and outputs and switching applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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CL2102
CL2102
150mA
500mA
20MHz
300jiS,
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MMBA811C7
Abstract: MMBT5086 transistor marking fl VC80
Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current
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MMBA811C7_
MMBT5086
OT-23
100MHz
MMBA811C7
transistor marking fl
VC80
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Untitled
Abstract: No abstract text available
Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Base Voltage : KST05 : KST06 Collector-Emitter Voltage : KST05 : KST06 Emitter-Base Voltage Collector Current Collector Dissipation
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KST05/06
OT-23
KST05
KST06
KSP05
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MARKING 1G TRANSISTOR
Abstract: No abstract text available
Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T ,= 2 5 °C Characteristic Symbol Collector Base Voltage Rating Unit VcBO KST05 KST06 Collector-Emltter Voltage KST05 KST06 Emitter-Base Voltage Collector Current
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KST05/06
OT-23
KST05
KST06
KSP05
MARKING 1G TRANSISTOR
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MARKING 1G TRANSISTOR
Abstract: KSP05 KST05 KST06 transistor mark 06 LC 300-S sot 23 mark BB
Text: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T .= 2 5 °C Characteristic Rating Symbol Collector Base Voltage % Unit VcBO KST05 KST06 Collector-Emitter Voltage KST05 KST06 Emitter-Base Voltage Collector Current
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KST05/06
KST05
KST06
OT-23
KSP05
100/iA,
MARKING 1G TRANSISTOR
KST05
KST06
transistor mark 06
LC 300-S
sot 23 mark BB
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8Q transistor
Abstract: MMBTA56 MPSA55 SS MARKING TRANSISTOR
Text: SAMSUNG SEMICONDUCTOR INC . MMBTA56 IME D | 7^4142 00Q72T? 7 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBTA56
MPSA55
OT-23
-10mA
100mA
-100mA,
-100mA
100mA,
100MHz
8Q transistor
MMBTA56
SS MARKING TRANSISTOR
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CL2102
Abstract: No abstract text available
Text: CKO 1 U A NPN SILICON TRANSISTOR DESCRIPTION CL2102 is planar transistor use for in AF medium power drivers and outputs and switching applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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CL2102
O-220rcFULL
150mA
500mA
20MHz
300jiS,
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC MMBTA56 IME D | TibMlMS O G O ? ^ ? 7 | PNP EPfTAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBTA56
OT-23
MPSA55
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MMBTA06
Abstract: MPSA05 Transistor driver TRANSISTOR MARKING FA
Text: SAMSUNG SEMICONDUCTOR INC MMBTA06 14E D | 7 c! b 4 1 4 a 0007531 fi | NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Ennitter Voltage Emitter-Base Voltage Collector Current
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MMBTA06
MPSA05
OT-23
100JJA,
100mA
100mA,
100mA
100MHz
Transistor driver
TRANSISTOR MARKING FA
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A357
Abstract: MMBTA55 MPSA55
Text: SAMSUNG SEMICONDUCTOR INC MMBTA55 m E D £ TTbMlMe 00072^1, 5 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T«=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Cottector-Emitter Voltage Emitter-Base Voltage
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MMBTA55
OT-23
MPSA55
-10mA
-100mA
100mA,
-100mA
-100mA,
100MHz
PWi300
A357
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transistor sot-23 marking L8
Abstract: transistor dc 558 npn MMBTA05 MPSA05
Text: SAMSUNG SEMICONDUCT OR INC MMBTA05 IME D | 7^4142 0007203 b | NPN EPITAXIAL SILICON TRANSISTOR - f-s a - ñ DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBTA05
MPSA05
OT-23
100mA
100mA,
100mA
100MHz
300jjs,
transistor sot-23 marking L8
transistor dc 558 npn
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MMBA811C5
Abstract: MMBT5086
Text: SA M S U N G SE MIC OND UC TOR INC MMBA811C5 IME D | 0007228 T | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic CoBector-Base Voltage CoNector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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Q007aaa
MMBA811C5
MMBT5086
OT-23
100nA,
10f/A,
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la 4142
Abstract: MMBA811C6 MMBT5086
Text: SA MS UN G SEMICONDUCTOR INC MMBA811C6 14E D | 711,4142 □ DO?aati 1 | PNP EPITAXIAL SILICON TRANSISTOR _ J T - 23- DRIVER TRANSISTOR t °i SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBA811C6
OT-23
MMBT5086
100nA,
100MHz
la 4142
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MARKING W2 SOT23 TRANSISTOR
Abstract: No abstract text available
Text: SAM SUN G SEMICONDUCTOR INC MMBA811C6 14E D | 7 ^ 4 1 4 2 □ D0?a3ti 1 | PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
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MMBA811C6
OT-23
MMBT5086
MARKING W2 SOT23 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SA M S U N G SEMICO NDU CTOR INC MMBTA06 14E D | iTbMlMa □0 07281 fi | NPN EPITAXIAL SILICON TRANSISTOR > -A R -IS DRIVER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
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MMBTA06
MPSA05
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KST55/56 DRIVER TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Base Voltage Rating Unit -60 -80 V VcBO : KST55 : KST56 C ollector-E m itter Voltage : KST55 : KST56 Em itter-Base Voltage
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KST55/56
KST55
KST56
KSP55
-100m
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Untitled
Abstract: No abstract text available
Text: S A M S U N G SEM IC O ND UC TOR INC MMBA811C5 IME D | T'Jfc.MlMa 0007228 T | PNP EPITAXIAL SILICON TRANSISTOR T - a q - Ie! DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic CoBector-Base Voltage CoNector-Emitter Voltage Emitter-Base Voltage
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MMBA811C5
OT-23
MMBT5086
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transistor SST 250
Abstract: BF819 250VT
Text: Philips Semiconductors Product specification NPN high-voltage transistor BF819 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 250 V). 1 em itter 2 collector, connected to m ounting base APPLICATIONS 3 base DESCRIPTION • Driver for a line output transistor in colour television
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BF819
O-202;
T0-202;
OT128B)
transistor SST 250
BF819
250VT
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Driver Transistor BSS64LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 120 Vdc Emitter – Base Voltage
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BSS64LT1
236AB)
15NOT
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BC450
Abstract: 5v power transistor
Text: CRO BC450 PNP SILICON TRANSISTOR DESCRIPTION BC450 is PNP silicon planar transistor designed for use as high voltage driver and output transistor. Particularly suitable as power darlington drivers. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Collector-Base Voltage
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BC450
BC450
300mA
625mW
100mA
100MII;
300/iS,
5v power transistor
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PDF
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KSA916
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSA916 AUDIO POWER AMPLIFIER • Driver Stage Amplifier • Complement to KSC2316 ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation
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KSA916
KSC2316
KSA916
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PDF
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