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    TRANSISTOR BAND COLOR Search Results

    TRANSISTOR BAND COLOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BAND COLOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1960

    Abstract: 2SC5225 Hitachi DSA00396
    Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features


    Original     		PDF 2SC5225 ADE-208-393 2SA1960. 2SA1960 2SC5225 Hitachi DSA00396

    Hitachi 2SA

    Abstract: Hitachi DSA002756
    Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393 1st. Edition Application • • • • Wide band video output amplifier for color CRT monitor. High frequency high voltage amplifier. High speed power switching. Complementary pair with 2SA1960. Features


    Original     		PDF 2SC5225 ADE-208-393 2SA1960. Hitachi 2SA Hitachi DSA002756

    MRF1057T1

    Abstract: AN1675 RK73H2A MDC5001 MRF1027T1 MRF1047T1 2.5 ghz lna transistor motorola rf spice 0/MRF1057
    Text: Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro INTRODUCTION This Application Note describes the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA


    Original     		PDF AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 AN1675 RK73H2A MDC5001 2.5 ghz lna transistor motorola rf spice 0/MRF1057

    2SA1960

    Abstract: 2SC5225 2SA19 Hitachi DSA00125
    Text: 2SA1960 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features • High voltage large current operation.


    Original     		PDF 2SA1960 2SC5225. 2SA1960 2SC5225 2SA19 Hitachi DSA00125

    2SA1960

    Abstract: 2SC5225 Hitachi DSA0014
    Text: 2SC5225 Silicon NPN Epitaxial Transistor Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA1960. Features • High voltage large current operation.


    Original     		PDF 2SC5225 2SA1960. 2SA1960 2SC5225 Hitachi DSA0014

    2SA1960

    Abstract: 2SC5225 2SC522 2SA19 Hitachi DSA00118
    Text: ADE–208–392 Z 2SA1960 Silicon NPN Epitaxial Transistor 1st. Edition Sep. 1995 Application TO–92 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225.


    Original     		PDF 2SA1960 2SC5225. 2SA1960 2SC5225 2SC522 2SA19 Hitachi DSA00118

    2SC5225

    Abstract: DSA003642
    Text: 2SC5225 Silicon NPN Epitaxial Transistor ADE-208-393A Z 2nd. Edition Mar. 2001 Application • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. Features • High voltage large current operation.


    Original     		PDF 2SC5225 ADE-208-393A 2SC5225 DSA003642

    MS-T520D

    Abstract: No abstract text available
    Text: Ref. No. - PT - MS-T520D MOK SAN ELECTRONIC CO., LTD. Q.A CHECKED APPROVED 1. General Description The MS-T520D is high sensitivity NPN silicon photo transistor mounted in a lensed, Black color epoxy looking package. 2. Feature 1 High sensitivity. 2) Wide Band of Collector Current.


    Original     		PDF MS-T520D MS-T520D MS-I300 MS-I500 1000Lux

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


    Original     		PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source


    Original     		PDF MRF9080LR3 MRF9080 marking WB1 sot-23 marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT

    NI-600

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6522-70 Rev. 9, 10/2008 RF Power Field Effect Transistor MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common source


    Original     		PDF MRF6522--70 MRF6522-70R3 MRF6522--70 NI-600

    LP2951

    Abstract: BC847 921 smd transistor
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522 LP2951 BC847 921 smd transistor

    motorola rf spice

    Abstract: J2/MRF1057TI AN1675 MDC5001 MRF1027T1 MRF1047T1 MRF1057T1 RK73H2A dbm-166 mixer MRF1057
    Text: Freescale Semiconductor, Inc. Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by Raul Pineiro Freescale Semiconductor, Inc. INTRODUCTION This Application Note describes the performance of the


    Original     		PDF AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 motorola rf spice J2/MRF1057TI AN1675 MDC5001 RK73H2A dbm-166 mixer MRF1057

    Untitled

    Abstract: No abstract text available
    Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband


    Original     		PDF MRF9080 MRF9080LR3

    smd transistor marking j1

    Abstract: No abstract text available
    Text: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522- smd transistor marking j1

    dbm-166 mixer

    Abstract: AN1675 MRF1057T1 MRF1057 MDC5001 MRF1027T1 MRF1047T1 RK73H2A mrf1027
    Text: MOTOROLA ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 SEMICONDUCTOR APPLICATION NOTE Order this document by AN1675/D AN1675 A Low Noise Amplifier with High IP3 for the 900 MHz Band Using the MRF1057T1 Low Noise Transistor Prepared by: Raul Pineiro This Application Note describes the performance of the


    Original     		PDF AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 dbm-166 mixer AN1675 MRF1057 MDC5001 RK73H2A mrf1027

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-

    BC847

    Abstract: LP2951 MRF6522-70 MRF6522-70R3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source


    Original     		PDF MRF6522 MRF6522-70R3 MRF6522-70 BC847 LP2951 MRF6522-70 MRF6522-70R3

    SANYO 16 AMP 120V NPN TRANSISTOR

    Abstract: C3781 transistor 2sC3781 2SC3781 005045 m475 2SA1475 SC46 T0220AB
    Text: 2527A Ordering num ber : EN 2SA1475/2SC3781 PNP/NPN Epitaxial Planar Silicon Transistor SAMTO Ultrahigh-Definition CRT Display Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features High f -\p ' fm


    OCR Scan     		PDF 2SA1475/2SC3781 500MHz) 2SA1475 2SC3781 71ci707b D0E04bD 2SAK75/2SC3781 D02D4bl SANYO 16 AMP 120V NPN TRANSISTOR C3781 transistor 2sC3781 005045 m475 2SA1475 SC46 T0220AB

    2SA1474

    Abstract: A147 SC46 T0220AB
    Text: Ordering num ber: EN 2526 2SA1474/2SC3780 PNP/NPN Epitaxial Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display _Video Output Applications i Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=800MHz


    OCR Scan     		PDF 2SA1474/2SC3780 800MHz) 2SA1474 A147 SC46 T0220AB

    2SC3782

    Abstract: transistor 2sa1 2528A 2SA1476 SC46 T0220AB transistor 2sc3782
    Text: Ordering number: EN 2528A 2SA1476/2SC3782 i PNP/NPN Epitaxial Planar Silicon Transistor SAm rol Ultrahigh-Definition CRT Display Video Output Applications Applications . Video output . Color TV chroma output . Wide-band amp Features . High fT fT typ=400MHz


    OCR Scan     		PDF 2SA1476/2SC3782 400MHz) VCEOi200V) 2SA1476 476/2SC 7cH707Li 2SC3782 transistor 2sa1 2528A SC46 T0220AB transistor 2sc3782

    Untitled

    Abstract: No abstract text available
    Text: H ITACH I 2SC5225-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SA 1960. Features


    OCR Scan     		PDF 2SC5225-------Silicon 2SC5225

    transistor 2SA

    Abstract: No abstract text available
    Text: H ITACH I 2SA1960-Silicon NPN Epitaxial Transistor Application T O -9 2 • Wide band video output amplifier for color CRT monitor. • High frequency high voltage amplifier. • High speed power switching. • Compelementary pair with 2SC5225. Features


    OCR Scan     		PDF 2SA1960-------Silicon 2SC5225. 2SA1960 transistor 2SA