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    TRANSISTOR BA47 Search Results

    TRANSISTOR BA47 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BA47 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    AEG TFK TELEFUNKEN

    Abstract: TFK diodes 148 IR diodes TFK 4 040 thyristor aeg varactor diode bb 205 aeg thyristor tfk U 264 Pertinax AEG drill electrical connection diagram MINI MELF MARKING CODE GP
    Text: TELEFUNKEN Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example: Material


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    AEG TFK TELEFUNKEN

    Abstract: TFK 802 BB205 thyristor aeg TFK 148 aeg rectifier varactor diode capacitance measurement aeg thyristor varactor s1 BA282
    Text: Diodes Data Book 1996 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide – Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    JFET TRANSISTOR REPLACEMENT GUIDE j201

    Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
    Text: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone


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    PDF U3750BM U3760MB-FN U3760MB-SD SSO-44 SD-40 U3800BM U3810BM U4030B U4030B JFET TRANSISTOR REPLACEMENT GUIDE j201 UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band

    D472A

    Abstract: ecu bosch 7.4.4 7292B b754 transistor transistor B754
    Text: 1234567 Enhanced Single Wire CAN Transceiver 89ABCD9E7 1 Fully compliant to GMW3089 V2.4 and J2411 Single Wire CAN specification for Class B in-vehicle communications 1 Only 60 µA worst case sleep mode current independent from CAN voltage range 1 Operating voltage range 5V to 26.5V


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    PDF 89ABCD9E7 GMW3089 J2411 ISO14001 TH8056 D472A ecu bosch 7.4.4 7292B b754 transistor transistor B754

    WPCE773LA0DG

    Abstract: G5285T11U-GP ICS9LPRS365B g31 crb WPCE773LA intel g41 crb Realtek ALC269Q High Definition Audio g41 crb WPCE773LA0DG, ALC269 diode af52
    Text: 5 4 3 JM41 Block Diagram Intel D CLK GEN. 1 Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.011 REVISION : 08266-1 SYSTEM DC/DC 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor CPU TOP L1 S L2 32 EMC2103


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    PDF ICS9LPRS365B 4CQ01 TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 RT9571 WPCE773LA0DG G5285T11U-GP ICS9LPRS365B g31 crb WPCE773LA intel g41 crb Realtek ALC269Q High Definition Audio g41 crb WPCE773LA0DG, ALC269 diode af52

    WPCE773LA0DG

    Abstract: TPS51125 Atheros AR8131 WISTRON power sequence RT8202 Realtek ALC269Q High Definition Audio NDS0610-NL-GP X-14D31818M-35GP Wistron Corporation winbond wpce773la0dg
    Text: 5 4 3 JM41 Block Diagram Intel D CLK GEN. 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA REVISION : 08266-SA 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor CPU TOP L1 S L2 32 EMC2103


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    PDF ICS9LPRS365B 4CQ01 08266-SA TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 WPCE773LA0DG TPS51125 Atheros AR8131 WISTRON power sequence RT8202 Realtek ALC269Q High Definition Audio NDS0610-NL-GP X-14D31818M-35GP Wistron Corporation winbond wpce773la0dg

    WPCE773LA0DG

    Abstract: gfx E3 diode ST330U2D5VDM-13GP GP 823* DIODE 2gp Transistor GFX DIODE 4gp transistor intel g41 crb jm41 TPS51125
    Text: 5 4 3 CLK GEN. 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP 3D3V_AUX_S5 Thermal Sensor TOP L1 S L2 VCC/GND 32 EMC2103 3 L3 S L4 D 37 RT8202 SMSC Penryn SFF ICS9LPRS365B 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA


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    PDF ICS9LPRS365B 4CQ01 08266-SA TPS51125 EMC2103 RT8202 667/800/1066MHz PCIex16 WPCE773LA0DG gfx E3 diode ST330U2D5VDM-13GP GP 823* DIODE 2gp Transistor GFX DIODE 4gp transistor intel g41 crb jm41 TPS51125

    WPCE773LA0DG

    Abstract: WISTRON power sequence intel g41 crb winbond wpce773la0dg Realtek ALC269Q High Definition Audio transistor BC33 g31 crb diode AH44 transistor bc47 TRANSISTOR BL41
    Text: 5 4 3 2 1 Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.021 REVISION : 08266-2 JM41/JM51 UMA Block Diagram SYSTEM DC/DC 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 PCB STACKUP D D 3D3V_AUX_S5 Thermal Sensor Intel CPU CLK GEN. L1 S L2


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    PDF JM41/JM51 4CQ01 TPS51125 ICS9LPRS365B EMC2103 RT8202 667/800/1066MHz PCIex16 WPCE773LA0DG WISTRON power sequence intel g41 crb winbond wpce773la0dg Realtek ALC269Q High Definition Audio transistor BC33 g31 crb diode AH44 transistor bc47 TRANSISTOR BL41

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


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    PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    WPCE773LA0DG

    Abstract: bg22 transistor G1454 TPS51125 9LPRS929 transistor bc47 9lprs9 BGA479-SKT-8-GP-U3 winbond wpce773la0dg transistor BG14
    Text: 5 4 3 2 SM30 Block Diagram D 1 SYSTEM DC/DC Project code: 91.4BT01.001 PCB P/N : 48.4BT01.001 Revision : 08239-SA Mobile CPU Penryn CLK GEN. 5V_S5 7A DCBATOUT PCB STACKUP SMSC 5V_AUX_S5 TOP SYSTEM DC/DC VCC INPUTS DDR3 LCD Cantiga 800/1033 12,13 MHz 1D05V_M(16A)


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    PDF 4BT01 08239-SA TPS51125 318MHz 9LPRS929 EMC2103 TPS51124 667/800/1066MHz RT9026 WPCE773LA0DG bg22 transistor G1454 TPS51125 9LPRS929 transistor bc47 9lprs9 BGA479-SKT-8-GP-U3 winbond wpce773la0dg transistor BG14

    WPCE773LA0DG

    Abstract: alc272x transistor r1009 TPS51125 9lprs9 100 N31 transistor SRN10KJ 9lprs929 ipad3 20D0
    Text: 5 4 3 2 SYSTEM DC/DC Project code: 91.4BT01.001 PCB P/N : 48.4BT01.001 Revision : 08239-SA SM30 Block Diagram D 1 Mobile CPU Penryn 5V_S5 7A DCBATOUT PCB STACKUP SMSC 5V_AUX_S5 TOP SYSTEM DC/DC VCC HOST BUS INPUTS DDR3 LCD Cantiga 800/1033 12,13 MHz 1D05V_M(16A)


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    PDF 4BT01 08239-SA TPS51125 318MHz 9LPRS929 EMC2103 TPS51124 667/800/1066MHz RT9026 WPCE773LA0DG alc272x transistor r1009 TPS51125 9lprs9 100 N31 transistor SRN10KJ 9lprs929 ipad3 20D0

    WPCE773LA0DG

    Abstract: DIODE C502 TPS51125 winbond wpce773la0dg RT8202 Realtek ALC269Q High Definition Audio P8022 NDS0610-NL-GP SC1U6D3V2KX-GP M92A
    Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SA REVISION : 08274-SA JM41 Discrete Block Diagram 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 D Thermal Sensor Intel CPU CLK GEN. SMSC Penryn SFF ICS9LPRS365B 4,5,6


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    PDF 4CQ01 08274-SA TPS51125 ICS9LPRS365B EMC2103 RT8202 667/800/1066MHz 64Mbx16x4 512MB) WPCE773LA0DG DIODE C502 TPS51125 winbond wpce773la0dg RT8202 Realtek ALC269Q High Definition Audio P8022 NDS0610-NL-GP SC1U6D3V2KX-GP M92A

    ALC889DSD

    Abstract: WPCE775L SL28648BLC transistor c4544 NS682403P wpce775 c2097 transistor transistor C4770 UPEK transistor C4046
    Text: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 Rev. Title of Schematics Page Index page BLOCK DIAGRAM CLOCK GEN (SL28648BLC)


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    PDF SL28648BLC) R5250 PR181 ALC889DSD WPCE775L SL28648BLC transistor c4544 NS682403P wpce775 c2097 transistor transistor C4770 UPEK transistor C4046

    winbond wpce773la0dg

    Abstract: WPCE773LA0DG WISTRON M40 TPS51125 rt8202a ALC269Q Schematic of the DRM chipset transistor K0392 Realtek ALC269Q High Definition Audio WPCE773LA0DG, ALC269
    Text: 5 4 3 2 1 SYSTEM DC/DC Project code: 91.4CQ01.001 PCB P/N : 48.4CQ01.0SB REVISION : 08274-1 JM41/JM51 Discrete Block Diagram 36 TPS51125 INPUTS OUTPUTS 5V_S5 6A 3D3V_S5(5A) DCBATOUT 5V_AUX_S5 D UMA LVDS UMA CRT Thermal Sensor Intel CPU CLK GEN. SMSC DIS LVDS


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    PDF JM41/JM51 4CQ01 TPS51125 EMC2103 ICS9LPRS365B RT8202 667/800/1066MHz 64Mbx16x4 512MB) winbond wpce773la0dg WPCE773LA0DG WISTRON M40 TPS51125 rt8202a ALC269Q Schematic of the DRM chipset transistor K0392 Realtek ALC269Q High Definition Audio WPCE773LA0DG, ALC269

    transistor sr61

    Abstract: BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor
    Text: K5T6432YT B M MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History 1.0 Draft Date Final Specification Remark November 27, 2001 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


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    PDF K5T6432YT 4Mx16) 2Mx16) 81-Ball 80x11 transistor sr61 BA107 transistor BA29 BA27 chip transistor BA106 BA99 SAMSUNG MCP A21-A7 transistor ba31 ba30 transistor

    SAMSUNG MCP

    Abstract: KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100
    Text: KBB0xA500M - T402 MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft October 15, 2002


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    PDF KBB0xA500M 8Mx8/4Mx16) 8Mx16) 4Mx16) 150uA 100uA 200uA 80-Ball 80x12 SAMSUNG MCP KBB05A500 transistor BA29 BA102 NAND FLASH BGA transistor ba47 Pre-programming nand samsung UtRAM Density BA841 BGA-100

    KBB0XA300M

    Abstract: transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402
    Text: Preliminary MCP MEMORY KBB0xA300M - T402 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash *2 / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark October 15, 2002 Preliminary


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    PDF KBB0xA300M 8Mx8/4Mx16) 8Mx16) 2Mx16) 80-Ball 80x12 transistor ba47 SAMSUNG MCP BA108 BA102 BA99 NAND FLASH BGA BGA34 BGA22 t402

    SAMSUNG MCP

    Abstract: samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60
    Text: SEC Only MCP MEMORY KAB0xD100M - TxGP Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8/4Mx16 Dual Bank NOR Flash / 128M Bit (8Mx16) NAND Flash / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft March 20, 2002


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    PDF KAB0xD100M 8Mx8/4Mx16) 8Mx16) 2Mx16) 39page) 43page) 80-Ball SAMSUNG MCP samsung toggle mode NAND ba7810 BA102 NAND FLASH BGA UtRAM Density BA5101 BA340 BGA-60

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


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    PDF KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp

    zener smd marking M1 sod-123

    Abstract: WT 7525 Zener diode smd marking code 39c smd diode z67 v9 TRANSISTOR SMD MARKING CODE t05 ZENER DIODE 6.2V bzx 85 c diode ZENER y8 sot23 zener BZX 55c 4v7 sod80 smd zener diode color band TRANSISTOR SMD MARKING CODE 3401
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book zener diodes and esd protection components vishay semiconductors vHN-db1103-0406 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vHN-db1103-0406 zener smd marking M1 sod-123 WT 7525 Zener diode smd marking code 39c smd diode z67 v9 TRANSISTOR SMD MARKING CODE t05 ZENER DIODE 6.2V bzx 85 c diode ZENER y8 sot23 zener BZX 55c 4v7 sod80 smd zener diode color band TRANSISTOR SMD MARKING CODE 3401

    ph 4148 zener diode

    Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vHN-db1102-0407 ph 4148 zener diode ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352

    BA100 diode

    Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
    Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)


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    PDF KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode

    GS230

    Abstract: transistor BC170 LD-10407 LD-10407A
    Text: PREPARED BY : SPEC No. LD-10407A DATE SHARP A PPR O V ED B Y : DATE FILENO. IS S U E : PAGE TFT LIQUID CRYSTAL DISPLAY GROUP SH A RP CORPORATION A u g ,19,1998 : 22 pages APPLICABLE G RO U P TFT Liquid Crystal Display G roup SPECIFICATION DEVICE SPECIFICATION FOR


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    PDF LD-10407A LQ181E1DG01 LD-10407-19 GS230 transistor BC170 LD-10407 LD-10407A