TRANSISTOR BA 13 Search Results

BE555MN

Contextual Info: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ D eT I ^ V S S D 9 097250 T O S H I BA DISCRETE/OPTO ¿ Ja ïh ih n 99D 16722 DDlt,72E S | D T - 31- 13 SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2S I 5 72 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (i-MOS) TENTATIVE INDUSTRIAL APPLICATIONS

marking IAY

Abstract: CMBT5400
Contextual Info: HIGH VOLTAGE TRANSISTOR P -N -P transistor M arking CMBT5400 = K? PA C K A G E O U TLIN E D ETA ILS A LL D IM E N SIO N S IN m m 3.0 0.14 Pin configuration 1 = BA SE 2 = EMITTER 3 = C O LLEC TO R ABSOLUTE MAXIM UM RATIN GS Collector-base voltage open emitter

Contextual Info: BCX54/BCX55/BCX56 NPN Plastic-Encapsulate Transistor P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER FEATURES High current Low voltage Medium power general purposes Driver stages of audio amplifiers. 1 2 3 SOT-89 MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

BSS138LT1

Abstract: J1 TRANSISTOR DIODE SOT-23 PACKAGE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TM BSS138LT1 N -Channel Enhancem ent Mode Logic Level S O T-23 MOSFET N-CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc-dc converters, power management in portable and ba ttery-po w e re d products such as computers,

telefunken ed 32 5000

Contextual Info: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le ­ phone. Features • Sm all fe ed ba ck capacitance

ba6489fs

Abstract: BA6479AFP-Y BA6608K BA6489 BA6608 1450 transistor ba6485 BA6845 BA6491FS Fdd spindle motor circuit 300
Contextual Info: ranrn ICs for Industrial Equipment FDD Block Diagram of Typical Applications « Single-chip FD D available in tuli-custom design Read/write amplifier Side BA M O O S e rte Side Motor driver Transistor array c= => f FDO controller S2PCS Series SA6470/ 80 $9 0 9 »

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Transistor 9012 ax

Abstract: transistor s 9012 nt transistor s9013 transistor s 9012 S9012 S9013 I-176 transistor c 9012
Contextual Info: S9013 NP N EP ITAXIAL S ILICON TRANSISTOR Ge nera l Purpos e Applica tion Colle ctor Curre nt Ic=500mA TO- 92 Colle ctor P owe r Dissipa tion P c=625mW Compleme ntary to S 9012 ABSOLUTE MAXIMUM RATINGS Characteristic Ta =25 Symbol Value Unit Collector-Ba s e Volta ge

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.

MRF911

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRF911 The RF Line f j = 5.0 G H z @ 30 m A HIGH FREQUENCY TRANSISTOR NPN SILICO N HIGH FREQUENCY TRANSISTOR . . . des ig n ed w id e ba n d NPN S IL IC O N p r i m a r i l y f o r use in h ig h gain, l o w - n o is e t u n e d and

transistor smd z8

Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor D e sig n e d fo r PCN and PCS ba se s ta tio n a p p lic a tio n s , th e M R F 6 4 0 8 incorporates high value em itter ballast resistors, gold metallizations and offers

93C24

Contextual Info: an A M P com pany Wireless Bipolar Power Transistor, 4W 1.6 -1.7 GHz Features • • • • • • • • Symbol Rating '♦ 60 V VCES 60 V Emitter-Base Voltage V EBO 3.0 V 'c 0.7 A 19.5 W ir ' ! d LH] T 1LR ii LMi r - L H lU •HJ' 'f K l BA S i G/B

c 2579 transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor N P N Silico n M PS5179 M otorola Preferred D evice COLLECTOR 3 2 ba se" 1 EMITTER M A X IM U M R A T IN G S Rating C o lle cto r-E m itte r Voltage Symbol Value Unit Vdc Vdc VCEO 12 C o lle c t o r - B a s e Voltage

transistor DK qj

Abstract: JKS-45 SE-49
Contextual Info: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @

Contextual Info: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed

RF TRANSISTOR 10GHZ

Abstract: BFP720 RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking
Contextual Info: D at a S h ee t , R ev . 1 . 0 , J an ua ry 2 00 9 B FP 72 0 S i G e :C H e t e r oj u n c t i o n W i d e ba n d R F B i p ol a r Transistor S m a l l S i g n a l D i s c r et e s Edition 2009-01-20 Published by Infineon Technologies AG, 85579 Neubiberg, Germany

cito RF

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP3040 The RF Line UHF Power Transistor 40 W — 960 MHz UHF POWER TRANSISTOR NPN SILICON T h e T P 3040 is s p e c ific a lly d e s ig n e d fo r o p e ra tio n as th e fin a l s ta g e in 960 M H z m o b ile ba s e s ta tio n a m p lifie r s . U tiliz a tio n o f e m itte r b a lla s t r e s is to rs a n d g o ld m e ta lliz a tio n

IH33

Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
Contextual Info: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O ­ STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR

BA12003

Abstract: transistor BA RW BA12004 transistor ba EL20M
Contextual Info: BA12001 BA12004 BA12002 BA12003 Driver, 7-channel, high current, high voltage The BA12001, BA12002, BA12003, and BA12004 are high-voltage, high-current transistor arrays consisting of 7 Darlington-connected transistors. Dimensions Units : mm (DIP16) Built-in surge absorbing diodes required

EB 13007

Abstract: E 13007 transistor E 13007 T 13007 D 13007 K 13007 TRANSISTOR transistor 13007 e13007 13007 en 13007
Contextual Info: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13Q06 : KSE13007 Collector Emitter Voltage : KSE13006

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES

AN 6752

Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1998 May 15 Philips Sem iconductors 1999 Apr 13 PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114TU FEATURES • Built-in bias resistor R1 typ. 10 k£2