TRANSISTOR B907 Search Results

TRANSISTOR B907 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR B907 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222.	PDF
B907 Abstract: 2SB907 2SD1222 Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. B907 2SB907 2SD1222	PDF
transistor B907 Abstract: B907 2SB907 2SD1222 Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·	Original	2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222	PDF
Untitled Abstract: No abstract text available Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222.	PDF
transistor B907 Abstract: B907 2SB907 2SD1222 Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222	PDF
transistor B907 Abstract: No abstract text available Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. transistor B907	PDF
transistor B907 Abstract: B907 024 marking code 2SB907 2SD1222 Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. transistor B907 B907 024 marking code 2SB907 2SD1222	PDF
B907 Abstract: 2SB907 2SD1222 Text: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. B907 2SB907 2SD1222	PDF
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