TRANSISTOR B6 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

NPN Transistor 600V

Abstract: B528 ULB122
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage

HLB122L

Abstract: HLB122
Contextual Info: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage

NPN Transistor 600V

Abstract: L13022
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L13022 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR „ DESCRIPTION 1 The UTC L13022 is a medium power transistor designed for use in switching applications. „ FEATURES * High breakdown voltage

philips tv smps

Abstract: BUK454-500B T0220AB
Contextual Info: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

SQD65BB75

Abstract: sqd65B
Contextual Info: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS

Contextual Info: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit

NPN Transistor 600V

Abstract: l13024 NPN Transistor 600V TO-220
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD L13024 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION The UTC L13024 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching

lte in philips

Abstract: BUK454-500B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E fc»TE D • 0 0 3 0 b2 5 b6 S H A P X fcifc.Sa'm Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

transistor b1

Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Contextual Info: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage

smd TRANSISTOR code b6

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PMEM4020ND PINNING FEATURES • 600 mW total power dissipation

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is Intended for use in

NPN Transistor 600V TO-220

Abstract: ULB124G ulb124
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES * High Speed Switching

LB122T

Abstract: HLB122T to-126 npn switching transistor 400v
Contextual Info: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching

HLB122I

Abstract: transistor k 2837
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2003.04.16 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching

NTE74C925

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74LS626 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator NTE74LS627 14-Lead DIP, See Dlag. 247 Dual Voltage Controlled Oscillator NTE74LS629 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator

HLB122T

Abstract: transistor k 2837
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/3 HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching

HLB122I

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching

HLB122D

Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
Contextual Info: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1  TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.  FEATURES 1 * High Speed Switching

ULB124

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 „ TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. „ FEATURES 1 * High Speed Switching