la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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NPN Transistor 600V
Abstract: B528 ULB122
Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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ULB122
ULB122
ULB122G-xx-TM3-T
O-251
QW-R213-014
NPN Transistor 600V
B528
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HLB122L
Abstract: HLB122
Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage
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HLB122
HLB122
O-251
HLB122L
QW-R213-014
HLB122L
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NPN Transistor 600V
Abstract: L13022
Text: UNISONIC TECHNOLOGIES CO., LTD L13022 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC L13022 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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L13022
L13022
O-251
L13022L
L13022G
L13022-TM3-T
L13022L-TM3-T
L13022G-TM3-T
QW-R213-014
NPN Transistor 600V
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philips tv smps
Abstract: BUK454-500B T0220AB
Text: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0030b25
BUK454-500B
T0220AB
BUK454-500B
philips tv smps
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PDF
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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SQD65BB75
Abstract: sqd65B
Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.
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SQP65BB75
SQD65BB75
00DEE22
SQD65BB75
sqd65B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS
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BULD128D-1
BULD128DA-1
BULD128DB-1
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Untitled
Abstract: No abstract text available
Text: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit
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BC818S
Ta-25Â
100uA
100mA
500mA
300mA
50MHZ
300uSJ
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NPN Transistor 600V
Abstract: l13024 NPN Transistor 600V TO-220
Text: UNISONIC TECHNOLOGIES CO., LTD L13024 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC L13024 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
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L13024
L13024
L13024L
L13024G
L13024-TA3-T
L13024-TM3-T
L13024L-TA3-T
L13024L-TM3-T
L13024G-TA3-T
L13024G-TM3-T
NPN Transistor 600V
NPN Transistor 600V TO-220
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lte in philips
Abstract: BUK454-500B T0220AB
Text: N AMER P H I L I P S / D I S C R E T E fc»TE D • 0 0 3 0 b2 5 b6 S H A P X fcifc.Sa'm Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0D3Db25
BUK454-500B
T0220AB
lte in philips
BUK454-500B
T0220AB
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transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
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HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
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smd TRANSISTOR code b6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PMEM4020ND PINNING FEATURES • 600 mW total power dissipation
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M3D302
PMEM4020ND
SCA75
R76/01/pp11
smd TRANSISTOR code b6
MOSFET TRANSISTOR SMD MARKING CODE A1
smd diode code B6
TRANSISTOR SMD MARKING CODE
smd code marking BM
MARKING SMD npn TRANSISTOR R
TRANSISTOR SMD MARKING CODE A1
smd TRANSISTOR code marking AV
smd TRANSISTOR marking b6
B6 DIODE schottky
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is Intended for use in
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BUK564-60H
SQT404
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NPN Transistor 600V TO-220
Abstract: ULB124G ulb124
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
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ULB124
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
O-251
QW-R213-013
NPN Transistor 600V TO-220
ULB124G
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
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ULB124
ULB124
O-220
ULB124G-xx-TA3-T
ULB124G-xx-TM3-T
O-251
QW-R213-013
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LB122T
Abstract: HLB122T to-126 npn switching transistor 400v
Text: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching
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HLB122T
HLB122T
O-126
183oC
217oC
260oC
LB122T
to-126 npn switching transistor 400v
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HLB122I
Abstract: transistor k 2837
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2003.04.16 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
transistor k 2837
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NTE74C925
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74LS626 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator NTE74LS627 14-Lead DIP, See Dlag. 247 Dual Voltage Controlled Oscillator NTE74LS629 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator
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NTE74LS626
16-Lead
NTE74LS627
14-Lead
NTE74LS629
NTE74LS640,
20-Lead
NTE74LS642
NTE74C925
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HLB122T
Abstract: transistor k 2837
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/3 HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching
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HT200208
HLB122T
HLB122T
O-126
transistor k 2837
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HLB122I
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
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HLB122D
Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
Text: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching
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HD200206
HLB122D
HLB122D
O-126ML
183oC
217oC
260oC
TP 1322
Transistor C G 774 6-1
transistor k 2837
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching
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ULB124
O-126
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-K
ULB124G-xx-T60-K
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ULB124
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching
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ULB124
O-126
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-T
ULB124G-xx-T60-T
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