TRANSISTOR B3 OF Search Results

D 1437 transistor

Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z MMPQ6700 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ6700 MMPQ6700 B4 E4 B3 E1 E2 B1 E3 B2 C4 C C3 4 C1 SOIC-16 C3 C2 C2 C1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10

Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 µA to

2n3906 PNP transistor DC current gain

Abstract: 2N3904 NPN TRANSISTOR OPERATIONS
Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in switches with collector currents of 10 mA to

MMPQ6700

Abstract: 2N3904 2N3906 CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ6700 MMPQ6700 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 Mark: MMPQ6700 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complementary devices can be used in switches with collector currents of 10 µA to

Contextual Info: MMPQ6502 MMPQ6502 E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Mark: MMPQ6502 B4 C2 C1 C3 C2 C4 C4 C3 TRANSISTOR TYPE C1 B1 E1 & C2 B2 E2 NPN C3 B3 E3 & C4 B4 E4 PNP Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and

transistor B42

Abstract: AX400 b42 transistor
Contextual Info: N E C ELECTRONICS INC 30E D • b457S25 OGSTSTl S ■ .r-W-b3 PHOTO TRANSISTOR PH I 07 DARLINGTON PHOTO TRANSISTOR The PH 107 is a darlington photo transistor in a plastic molded package, P A C K A G E D IM EN SIO N S and very suitable for a detector of a photo interrupter.

D 1437 transistor

Abstract: CBVK741B019 F63TNR L86Z MMPQ6502 NDM3000 NDM3001 PN2222A PN2907A SOIC-16
Contextual Info: MMPQ6502 MMPQ6502 B E4 4 B3 E1 B1 E2 SOIC-16 B2 E3 C C4 4 C3 C1 C2 C1 C C2 3 Pin #1 TRANSIST OR TRANSISTOR TYPE C1 B1 E1 & C 2 B2 E 2 NPN C3 B3 E3 & C4 B4 PNP E4 Quad NPN & PNP General Purpose Amplifier These complimentary devices can be used in medium power amplifiers, drivers and

MJE305

Abstract: MJE3055T MJE30*T MJE2955T-MJE3055T
Contextual Info: CDU MJE2955T MJE3055T MJE2955T, MJE3055T PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Genera], Purpose Amplifier and Switching Applications DIM A 8 C E F G H J °Jc. MAX 16.51 10.67 4.B3 0.90 1,40 3,88 2.79 3.43 0,56 3,56 1,15 3,75 2,29 2,54 -

BLW81

Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.

BLY91

Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
Contextual Info: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _

UHF TRANSISTOR

Abstract: BLV193 URA547 44w TRANSISTOR TRansistor A 940
Contextual Info: bb5 3 T 31 Philips Semiconductors GDETEBD b3 b M APX Product specification BLV193 UHF power transistor — N AMER PHILIPS/DISCRETE bTE ]> QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. FEATURES • Emitter ballasting resistors for an

K1118

Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Contextual Info: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier

transistor j 108

Contextual Info: ~ HEAT DISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS LA-B3 Series ~ 110 ~100 Ct., [:;3 1=1. -~I 1 TO-220 TRANSISTOR I I I A. N.C. Horiz. Device Only Mounted to G-10. 70 B. N.C. Horiz. & Vert. With Dissipator. C. 200 FPM w/Diss. ~ aJ < UJ !Q ~

Contextual Info: b3 L 7 E S M Q l G l bD l 2 53 M f l O T b Order this data sheet by MUN5111T1/D MOTOROLA SEMICONDUCTOR H TECHNICAL DATA Bias Resistor TVansistor PNP Silicon Surface Mount Transistor With Monolithic Bias Resistor N etw ork This new series of digital transistors is designed to replace a single device and

transistor TO-3 Outline Dimensions

Abstract: transistor c 129 LA394B4 LATO3B4B
Contextual Info: ~ HEAT DISSIPATORS FOR METAL CASE, CASE-MOUNTED LA-B3 Series for TO-3 Outline LATO3B3CB w/2N3055 ~11° ~ <0:> 100 1 fz w m ~ < w > a3 < w 00 0: 0.: ~ w fw 00 ~1 ~1-+;!~ A SEMICONDUCTORS YCI C B I~ D /1 90 / "./1 L -f 80 ~,. r TO-3 TRANSISTOR / .2: '"'""

MJE1100 MOTOROLA

Abstract: MJE1100 transistor MJE6043 2N6041 MJE1101 MJE1103 transistor MJE1103 mje1102 mje6044 MJE1090
Contextual Info: MOTOROLA SC 34 OIODES/OPTO} 6367255 MOTOROLA SC D lf | b3 t,7B5 5 DIO DES/O PTO 34C O O BT'im 37941 r- 3 3 - 0 / SILICON POWER TRANSISTOR DICE (continued) 2C6045 DIE NO. — NPN LINE SOURCE — PL500.E210 •• D 2C6042 DIE NO. — PNP LINE SOURCE — PL500.E209

t0261aa

Contextual Info: MO TO RO LA SC X ST RS /R F b3 b 7 S S M 0 0 ^ 3 2 bfiE D MTT MOTb MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Medium Power Field Effect Transistor M M FT1N 10T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device

a32s

Abstract: atm dun hen vd MTM5N35
Contextual Info: MOTOROLA SC 1 *4E D I XSTRS/R F b3 t.?e S 4 DGTGQO3 1 | MOTOROLA 7 - - 3 m SEM ICONDUCTOR TECHNICAL DATA MTM5N35 MTM5N4Q MTP5N35 MTP5N40 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS ¥ These TM O S Power FETs are designed for high voltage, high

Contextual Info: M IT S U B IS H I B IPO LA R D IG IT A L ICs b3 E • bSM'ìfiB? D D I S l l b MITSUBISHI D G T L 3D2 « « 1 1 3 M 54580P LOGIC 7-UNIT 150mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY DESCRIPTION The M54580P, 7-channel source driver, consists of 7 PNP and 7 NPN transistors connected to form high current gain

TP3020A

Abstract: CER40 case 244-04 TP3020
Contextual Info: b'ìE D MO TO R O L A SC X ST RS /R F b3 b 7 B S 4 DIDDflfll «riOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TP3020A The RF Line U H F P o w er Transistor The TP3020A is designed for use in the 900 MHz mobile radio band. Its high gain and ability to operate Class A makes it an ideal choice as a driver operating

MTH8N55

Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
Contextual Info: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high

CQM1-OD212

Abstract: CQM1-OD214 CQM1-OD213 CQM1-OD215 CQM1-OA221 CQM1-OD211 a7 transistor transistor A6 b7 tRANSISTOR CQM1OD213
Contextual Info: Transistor Output Units 8-point Transistor Output Unit Item Max. Switching Capacity CQM1-OD211 2 A at 24 VDC +10%/ –15% 5 A/Unit Leakage Current 0.1 mA max. Residual Voltage 0.7 V max. ON Delay 0.1 ms max. OFF Delay 0.3 ms max. No. of Outputs 8 points 8 points/common, 1 circuit

molex Connector 51030-0330

Abstract: GT1-ID32ML-1 D-Sub 25-pin Connector GT1-OD16 G70D-SOC16-1 51030-0330 XW2D-40G6 GT1-ID16-1 FCN363J040-AU GT1-ID16
Contextual Info: Digital I/O Units Digital I/O Units Compatible with MULTIPLE I/O TERMINAL • Terminal block, connector, and high-density connector models are available. • The circuit block of the terminal block model can be

transistor 224-1 base collector emitter

Contextual Info: b3E • fctPMTfiS? DGISDTE MITSUBISHI DGTL OM^ ■ MIT3 M ITSUBISHI BIPOLAR DIGITAL ICs M54568L LOGIC 4-U N IT 30mA PNP TRANSISTOR ARRAY DESCRIPTION The M54568L, general purpose transistor array, consists of 4 PNP transistors connected in a commom-emitter configura­