TRANSISTOR B122 Search Results

tp5aw

Contextual Info: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination

Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: Supertex inc. DN1509 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description This low threshold, depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well

Contextual Info: TP5322 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

TP2520N8-G

Contextual Info: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

2206N2

Contextual Info: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

NEC E170632

Abstract: e170632 B511 transistor MRF03-6P-1 201PW021 D311 transistor transistor B512 NL128102AC31-02A A3121 8 pin D311 equivalent
Contextual Info: DATA SHEET TFT COLOR LCD MODULE NL128102AC31-02A Diagonal Size 51.0 cm 20.1 Type , 1280 x 1024 Pixels, 16,777,216 Color, TMDS Interface/CRT Monitor Compatible Interface, Ultra-Wide Viewing Angle NL128102AC31-02A module is composed of the amorphous silicon thin film transistor liquid crystal

Contextual Info: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure

Transistor B123

Contextual Info: 2DI3OOA-O5O 300a • & ±*<r7 —:£ ì> a .—JU : Outline Drawings POWER TRANSISTOR MODULE : Features • ±n$L High Current • hFE *'"¡§ 1 ' High DC Current,Gain f0'2 -•■ aii Re' Insulated Type \£ / Ä i C2EI Applications • JzWJjZ.'f High Power Sw itching

c2320

Abstract: TRANSISTOR c2320 TC2320TG p channel mosfet 100v ultrasound transducer circuit driver 125OC TC2320 TC2320TG-G c2320 transistor
Contextual Info: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure

H11S

Abstract: lc-300A
Contextual Info: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply

Transistor B123

Abstract: H11S r6e2 T151 T760 b123 04 DA092
Contextual Info: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply

DPDT 6 terminal window switch

Abstract: H3CR-A8E TIMER H3CR-A8 11 pin relay Socket DPDT 6 terminal switch internal diagram H3CR-A H3CR-A8 SPDT 5 pins Relay SPDT relay Y92F 30
Contextual Info: Solid-state Multi-functional Timer Timers H3CR-A DIN 48 x 48-mm State-of-the-art Multifunctional Timer • A wider power supply range reduces the number of timer models kept in stock. • A wide range of applications through six or four operating modes. • Reduced power consumption.

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

Telemecanique SR1 B201FU

Abstract: Telemecanique SR1 B101FU Zelio zelio SR1 Telemecanique sr1 user guide Telemecanique SR1 A201FU software telemecanique sr1 SR1 A201FU SR1 A201BD SR1 B201BD
Contextual Info: Plaquette Zelio v2.flashage EN 20/09/02 15:01 Page 4 Telemecanique Zelio Logic Logically advanced!. Building a New Electric World 15:00 Page 1 Zelio Logic. a host of functions, for a multitude of applications Zelio Logic is designed for use in small automation systems:

IR2125

Abstract: 104X111 IR2125(S) equivalent IGBT manual 017D MP150 H3CR-F8-300 figure circuit manual 125+kHz+RFID+READER+EM+18+CIRCUIT
Contextual Info: Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 12 to 18V

IR2125

Abstract: 017D MP150 IGBT Designers Manual
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune

CBL-202

Contextual Info: CJ1 Ordering Guide CPU Selection J CPUs Part number CPU Model Description/Specifications No. of I/O points Max. no. of modules, Max. no. of expansions See Note 2. Program capacity Data memory capacity (See Note 1.) LD instruction processing speed Standards

Zelio SR3

Abstract: user manual sr2 b201bd SR2 B201BD SR2 A201BD SR2 cbl01 sr2 b201bd operation manual sr3 b101fu SR3 B261BD B201BD zelio SR3 B101BD
Contextual Info: Zelio Logic smart relays Presentation Compact and modular smart relays Presentation 109446 Zelio Logic smart relays are designed for use in small automated systems. They are used in both industrial and commercial applications. b For industry: v automation of small finishing, production, assembly or packaging machines.

Mitsubishi a1shcpu

Abstract: A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30
Contextual Info: MITSUBISHI ELECTRIC 130 Programmable Logic Controllers 1 MELSEC AnS, QnAS 130 130 X 6,5 93,6 130 1 2 3 4 5 6 7 STOP POWER RUN LCLR ERROR RESET RUN RESET MITSUBISHI MITSUBISHI 1 OUTPUT INPUT 3A AC 100/110/120V DC5V AC 200/220/240V 69,5 2 3 4 5 6 7 8 9 A B C

d313 TRANSISTOR equivalent

Abstract: 207a smd ic smd diode 106E mil-std-202F 101D 6822 TRANSISTOR equivalent transistor d323 MIL-STD-202F-201A transistor D313 smd diode 101a D313 VOLTAGE REGULATOR
Contextual Info: RELIABILITY TESTING OF SEMICONDUCTOR DEVICES V. RELIABILITY TESTING OF SEMICONDUCTOR DEVICES 1. WHAT IS RELIABILITY TESTING? 2. RELIABILITY TEST METHODS 3. ACCELERATED LIFE TEST 4. ANALYSIS OF TEST RESULTS 4.1 HOW TO USE WEIBULL PROBABILITY PAPER 3. 4.1.1 APPLICATION OF WEIBULL PROBABILITY PAPER