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    TRANSISTOR B122 Search Results

    TRANSISTOR B122 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B122 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tp5aw

    Abstract: No abstract text available
    Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		TP2510 125pF TP2510 O-243AA OT-89) O-243, DSFP-TP2510 B122707 tp5aw PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. DN1509 N-Channel Depletion-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► General Description This low threshold, depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex’s well


    Original     		DN1509 DSFP-DN1509 B122013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP5322 P-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex TP5322 is a low threshold enhancementmode normally-off transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate


    Original     		TP5322 110pF O-236, TP5322 O-243AA OT-89) O-243, DSFP-TP5322 B122707 PDF

    TP2520N8-G

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 TP2520N8-G PDF

    2206N2

    Abstract: No abstract text available
    Text: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		VP2206 DSFP-VP2206 B122608 2206N2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		TP2522 125pF 200pF TP2522 O-243AA OT-89) O-243, DSFP-TP2522 B122707 PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		TN2524 125pF TN2524 O-243AA OT-89) O-243, DSFP-TN2524 B122707 PDF

    NEC E170632

    Abstract: e170632 B511 transistor MRF03-6P-1 201PW021 D311 transistor transistor B512 NL128102AC31-02A A3121 8 pin D311 equivalent
    Text: DATA SHEET TFT COLOR LCD MODULE NL128102AC31-02A Diagonal Size 51.0 cm 20.1 Type , 1280 x 1024 Pixels, 16,777,216 Color, TMDS Interface/CRT Monitor Compatible Interface, Ultra-Wide Viewing Angle NL128102AC31-02A module is composed of the amorphous silicon thin film transistor liquid crystal


    Original     		NL128102AC31-02A NL128102AC31-02A DE0203 NEC E170632 e170632 B511 transistor MRF03-6P-1 201PW021 D311 transistor transistor B512 A3121 8 pin D311 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure


    Original     		TC2320 TC2320 DSFP-TC2320 B122208 PDF

    c2320

    Abstract: TRANSISTOR c2320 TC2320TG p channel mosfet 100v ultrasound transducer circuit driver 125OC TC2320 TC2320TG-G c2320 transistor
    Text: TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description ► ► ► ► ► ► ► The Supertex TC2320 consists of a high voltage, low threshold N- and P-channel MOSFET in an 8-Lead SOIC package. This low threshold enhancement-mode normallyoff transistor utilizes an advanced vertical DMOS structure


    Original     		TC2320 TC2320 DSFP-TC2320 B122208 c2320 TRANSISTOR c2320 TC2320TG p channel mosfet 100v ultrasound transducer circuit driver 125OC TC2320TG-G c2320 transistor PDF

    B12-28

    Abstract: 385 b12 ASI10801
    Text: B12-28 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380" 4L STUD DESCRIPTION: .112x45° The B12-28 is Designed for Class C Power Amplifier Applications up to 250 MHz. A C B E FEATURES: ØC • PG = 13 dB Typical at 12 W/175 MHz • ∞ Load VSWR at Rated Conditions


    Original     		B12-28 112x45° B12-28 ASI10801 385 b12 ASI10801 PDF

    DPDT 6 terminal window switch

    Abstract: H3CR-A8E TIMER H3CR-A8 11 pin relay Socket DPDT 6 terminal switch internal diagram H3CR-A H3CR-A8 SPDT 5 pins Relay SPDT relay Y92F 30
    Text: Solid-state Multi-functional Timer Timers H3CR-A DIN 48 x 48-mm State-of-the-art Multifunctional Timer • A wider power supply range reduces the number of timer models kept in stock. • A wide range of applications through six or four operating modes. • Reduced power consumption.


    Original     		48-mm 11-pin B-130 DPDT 6 terminal window switch H3CR-A8E TIMER H3CR-A8 11 pin relay Socket DPDT 6 terminal switch internal diagram H3CR-A H3CR-A8 SPDT 5 pins Relay SPDT relay Y92F 30 PDF

    Telemecanique SR1 B201FU

    Abstract: Telemecanique SR1 B101FU Zelio zelio SR1 Telemecanique sr1 user guide Telemecanique SR1 A201FU software telemecanique sr1 SR1 A201FU SR1 A201BD SR1 B201BD
    Text: Plaquette Zelio v2.flashage EN 20/09/02 15:01 Page 4 Telemecanique Zelio Logic Logically advanced!. Building a New Electric World 15:00 Page 1 Zelio Logic. a host of functions, for a multitude of applications Zelio Logic is designed for use in small automation systems:


    Original     		LECED102061EN Telemecanique SR1 B201FU Telemecanique SR1 B101FU Zelio zelio SR1 Telemecanique sr1 user guide Telemecanique SR1 A201FU software telemecanique sr1 SR1 A201FU SR1 A201BD SR1 B201BD PDF

    IR2125

    Abstract: 017D MP150 IGBT Designers Manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.017D IR2125 CURRENT LIMITING SINGLE CHANNEL DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +500V Tolerant to negative transient voltage dV/dt immune


    Original     		IR2125 IR2125 B-121 B-122 017D MP150 IGBT Designers Manual PDF

    CBL-202

    Abstract: No abstract text available
    Text: CJ1 Ordering Guide CPU Selection J CPUs Part number CPU Model Description/Specifications No. of I/O points Max. no. of modules, Max. no. of expansions See Note 2. Program capacity Data memory capacity (See Note 1.) LD instruction processing speed Standards


    Original     		R301-E3-01 CBL-202 PDF

    Zelio SR3

    Abstract: user manual sr2 b201bd SR2 B201BD SR2 A201BD SR2 cbl01 sr2 b201bd operation manual sr3 b101fu SR3 B261BD B201BD zelio SR3 B101BD
    Text: Zelio Logic smart relays Presentation Compact and modular smart relays Presentation 109446 Zelio Logic smart relays are designed for use in small automated systems. They are used in both industrial and commercial applications. b For industry: v automation of small finishing, production, assembly or packaging machines.


    Original     		p201FU, B121B p101FU 14102-EN fm/17 Zelio SR3 user manual sr2 b201bd SR2 B201BD SR2 A201BD SR2 cbl01 sr2 b201bd operation manual sr3 b101fu SR3 B261BD B201BD zelio SR3 B101BD PDF

    Mitsubishi a1shcpu

    Abstract: A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30
    Text: MITSUBISHI ELECTRIC 130 Programmable Logic Controllers 1 MELSEC AnS, QnAS 130 130 X 6,5 93,6 130 1 2 3 4 5 6 7 STOP POWER RUN LCLR ERROR RESET RUN RESET MITSUBISHI MITSUBISHI 1 OUTPUT INPUT 3A AC 100/110/120V DC5V AC 200/220/240V 69,5 2 3 4 5 6 7 8 9 A B C


    Original     		100/110/120V 200/220/240V 1SY80 1SY81 1SX81 59085-G, U-254070 D-40880 Mitsubishi a1shcpu A1SY10EU A2SH A1SHcpu A1S61PN A1SJ71AT21B A6BAT Melsec a1shCPU MITSUBISHI INTELLIGENT POWER MODULES A1S61PN A2ASCPU-S30 PDF

    d313 TRANSISTOR equivalent

    Abstract: 207a smd ic smd diode 106E mil-std-202F 101D 6822 TRANSISTOR equivalent transistor d323 MIL-STD-202F-201A transistor D313 smd diode 101a D313 VOLTAGE REGULATOR
    Text: RELIABILITY TESTING OF SEMICONDUCTOR DEVICES V. RELIABILITY TESTING OF SEMICONDUCTOR DEVICES 1. WHAT IS RELIABILITY TESTING? 2. RELIABILITY TEST METHODS 3. ACCELERATED LIFE TEST 4. ANALYSIS OF TEST RESULTS 4.1 HOW TO USE WEIBULL PROBABILITY PAPER 3. 4.1.1 APPLICATION OF WEIBULL PROBABILITY PAPER


    Original     		R69-20 d313 TRANSISTOR equivalent 207a smd ic smd diode 106E mil-std-202F 101D 6822 TRANSISTOR equivalent transistor d323 MIL-STD-202F-201A transistor D313 smd diode 101a D313 VOLTAGE REGULATOR PDF

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503 PDF

    Transistor B123

    Abstract: No abstract text available
    Text: 2DI3OOA-O5O 300a • & ±*<r7 —:£ ì> a .—JU : Outline Drawings POWER TRANSISTOR MODULE : Features • ±n$L High Current • hFE *'"¡§ 1 ' High DC Current,Gain f0'2 -•■ aii Re' Insulated Type \£ / Ä i C2EI Applications • JzWJjZ.'f High Power Sw itching


    OCR Scan     		E82988 Transistor B123 PDF

    H11S

    Abstract: lc-300A
    Text: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply


    OCR Scan     		DI300A-050 l95t/R89 H11S lc-300A PDF

    Transistor B123

    Abstract: H11S r6e2 T151 T760 b123 04 DA092
    Text: 2 DI300A-050 300A POWER TRANSISTOR MODULE • ¡tfJ i: : Features • ^^iyfE High Current • h F E A ^ i' • High DC Current.Gain Insulated Type ■ f f l i i : A pplications ih W tJ Z x i v T 's ? High Power Sw itching • U ninterruptible Power Supply


    OCR Scan     		II15IJÃ I95t/R89) Shl50 Transistor B123 H11S r6e2 T151 T760 b123 04 DA092 PDF

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


    OCR Scan     		8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361 PDF