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    TRANSISTOR B1116A Search Results

    TRANSISTOR B1116A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B1116A Datasheets Context Search

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    transistor b1116

    Abstract: B1116A B1116 transistor b1116a KSB116A 1116a KSB1116 KSB1116A KSD1616
    Text: KSB1116/1116A KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO


    Original     		PDF KSB1116/1116A KSD1616/1616A KSB1116 KSB1116A KSB116A PW10ms, transistor b1116 B1116A B1116 transistor b1116a KSB116A 1116a KSB1116 KSB1116A KSD1616