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    TRANSISTOR B 886 Search Results

    TRANSISTOR B 886 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 886 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65

    GMBTA05

    Abstract: No abstract text available
    Text: G M B TA 0 5 1/2 NPN SILICON TRANSISTOR Description The GMBTA05 is Amplifier Transistor. Package Dimensions REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30


    Original     		PDF GMBTA05

    HMPS650

    Abstract: audio transistor
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6327-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS650 NPN SILICON TRANSISTOR Description The HMPS650 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures


    Original     		PDF HE6327-B HMPS650 HMPS650 audio transistor

    HMPS751

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6317-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPS751 PNP SILICON TRANSISTOR Description Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6317-B HMPS751 HMPS751

    HMPSA05

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6301-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/4 HMPSA05 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6301-B HMPSA05 HMPSA05

    HMPS6562

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6322-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS6562 PNP SILICON TRANSISTOR Description The HMPS6562 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures


    Original     		PDF HE6322-B HMPS6562 HMPS6562

    HMPSA43

    Abstract: 100MHZ HMPSA93
    Text: HI-SINCERITY Spec. No. : HE6334-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/3 MICROELECTRONICS CORP. HMPSA43 NPN SILICON TRANSISTOR Description The HMPSA43 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage


    Original     		PDF HE6334-B HMPSA43 HMPSA43 HMPSA93 100MHZ HMPSA93

    HMPS651

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6326-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS651 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6326-B HMPS651 HMPS651

    1902 transistor

    Abstract: H2N6426
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6232-B Issued Date : 1998.01.09 Revised Date : 2000.09.15 Page No. : 1/3 H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6232-B H2N6426 1902 transistor H2N6426

    H2N6427

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6274-B H2N6427 H2N6427

    1902 transistor

    Abstract: H2N5089
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6273-B Issued Date : 1993.12.08 Revised Date : 2000.09.15 Page No. : 1/3 H2N5089 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE6273-B H2N5089 1902 transistor H2N5089

    HM27

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9517-B Issued Date : 1997.06.06 Revised Date : 2000.10.01 Page No. : 1/3 HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C


    Original     		PDF HE9517-B HM27

    1902 transistor

    Abstract: darligton power transistor darligton transistor HMPSA26
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6308-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : 1/3 HMPSA26 NPN SILICON TRANSISTOR Description The HMPSA26 is designed for using in darligton transistor. Absolute Maximum Ratings • Maximum Temperatures


    Original     		PDF HE6308-B HMPSA26 HMPSA26 1902 transistor darligton power transistor darligton transistor

    HM14

    Abstract: HM64
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE5908-B Issued Date : 1998.04.09 Revised Date : 2000.10.01 Page No. : 1/3 HM14 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM14 is a darlington amplifier transistor designed for applications requiring extremely high current gain.


    Original     		PDF HE5908-B HM14 HM64

    1902 transistor

    Abstract: H2N3417
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267-B Issued Date : 1992.11.25 Revised Date : 2000.09.01 Page No. : 1/3 H2N3417 NPN SILICON TRANSISTOR Description The H2N3417 is a silicon NPN planar epitaxial transistor designed for small signal general purpose and switching applications.


    Original     		PDF HE6267-B H2N3417 H2N3417 1902 transistor

    hbf423

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6403-B Issued Date : 1993.03.18 Revised Date : 2000.09.20 Page No. : 1/3 HBF423 PNP EPITAXIAL PLANAR TRANSISTOR Description Video B-class Power stages in TV-receivers Absolute Maximum Ratings • Maximum Temperatures


    Original     		PDF HE6403-B HBF423 hbf423

    GL5672

    Abstract: No abstract text available
    Text: 1/2 GL5672 NPN LOW FREQUENCY TRANSISTOR Description The GL5672 is a low frequency transistor . Excellent DC current gain characteristics. Package Dimension REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J


    Original     		PDF GL5672 GL5672

    HE8051

    Abstract: HE8551
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6113-B Issued Date : 1992.09.30 Revised Date : 2000.09.20 Page No. : 1/3 HE8551 PNP EPITAXIAL PLANAR TRANSISTOR Description The HE8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation.


    Original     		PDF HE6113-B HE8551 HE8551 HE8051 HE8051

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E D • bbS3c 31 0D23H3B l b 3 BLW91 X IAPX U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 0D23H3B BLW91

    BFQ 42 transistor

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS B IT Â S y i I T BF0251 PNP video transistor 1998 Oct 06 Product specification Supersedes data of 1997 Oct 02 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP video transistor BFQ251 FEATURES


    OCR Scan     		PDF BF0251 BFQ251 MSB033 125102/00/04/pp8 BFQ 42 transistor

    MPS3639

    Abstract: transistor yr
    Text: MPS3639 silicon PNP SILICON ANNULAR TRANSISTOR PNP SILICON SWITCHING TRANSISTOR . . designed for use in low-current, high-speed switching applications. Collector-Em itter Breakdown Voltage — B V c e S = 6 0 Vdc (Min) Fast Switching Tim e @ l c * 50 mAdc


    OCR Scan     		PDF MPS3639 MPS3639 transistor yr

    8 pin ic lm 745

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BF588 PNP high-voltage transistor 1999 Apr 12 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BF588 FEATURES • Low fe e d b a ck capacitance.


    OCR Scan     		PDF BF588 BF585 BF587. MBH792 115002/00/03/pp8 8 pin ic lm 745

    BLW91

    Abstract: high power npn UHF transistor blw91 transistor
    Text: LSE » ES 7110fl2b □ 0fc.33ci5 457 « P H I N BLW91 PHILIPS INTERNATIONAL_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable fo r transm itting applications in class-A, B or C in the u.h.f. and v.h.f. range fo r a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


    OCR Scan     		PDF 7110fl2b 33ci5 BLW91 BLW91 high power npn UHF transistor blw91 transistor