PRSP0008DA-B
Abstract: No abstract text available
Text: Magazine code Magazine material MP225PC PVC Polyvinyl chloride Package name Renesas code Previous code SOP-8 PRSP0008DA-B 8P2S-B Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box
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MP225PC
PRSP0008DA-B
PRSP0008DA-B
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) (b) 7.0+/-0.2 0.2+/-0.05
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RD12MVP1
175MHz,
RD12MVP1
175MHz
175MHz)
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
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MARK "326" FET
Abstract: transistor 3669
Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor (b) (b) 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK
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RD05MMP1
941MHz,
RD05MMP1
941MHz
941MHz)
05Electric
Oct2011
MARK "326" FET
transistor 3669
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Untitled
Abstract: No abstract text available
Text: BC556,B BC557,A,B,C BC558,B Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E Mechanical Data
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BC556
BC557
BC558
150oC
625mW
BC556
BC557
BC558
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DIODE GP 704
Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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RD12MVP1
175MHz,
RD12MVP1
175MHz
175MHz)
DIODE GP 704
transistor mosfet 536
VGS-75
0452 mosfet
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pin configuration NPN transistor BC548
Abstract: pin configuration transistor BC547 pin configuration NPN transistor BC547 Amplifier with transistor BC548 BC547 pin configuration NPN transistor BC546 BC547 as amplifiers BC548 BC548C BC546
Text: BC546,B BC547,A,B,C BC548,A,B,C Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features NPN Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E
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BC546
BC547
BC548
150oC
625mW
BC546
BC547
BC548
pin configuration NPN transistor BC548
pin configuration transistor BC547
pin configuration NPN transistor BC547
Amplifier with transistor BC548
pin configuration NPN transistor BC546
BC547 as amplifiers
BC548C
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SOT-923F
Abstract: MMBT3906SL SOT923 KTMC1060SC MMBT3904SL JESD22A121
Text: MMBT3904SL C NPN Epitaxial Silicon Transistor Features • General purpose amplifier transistor. E • Ultra small surface mount package for all types max 0.43mm tall B • Suitable for general switching & amplification • Well suited for portable application
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MMBT3904SL
OT-923F
MMBT3906SL
MMBT3904SL
SOT-923F
SOT923
KTMC1060SC
JESD22A121
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transistor D 1666
Abstract: transistor 801 diagrams
Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05
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RD12MVP1
175MHz,
RD12MVP1
175MHz
175MHz)
Oct2011
transistor D 1666
transistor 801 diagrams
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HLB121I
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9027-B Issued Date : 1996.11.06 Revised Date : 2000.11.01 Page No. : 1/3 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in
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HE9027-B
HLB121I
HLB121I
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UP1855 PNP SILICON TRANSISTOR HIGH CURRENT TRANSISTOR FEATURES * High current switching * Low VCE SAT * High hFE 1 ORDERING INFORMATION Ordering Number UP1855G-x-AA3-R Note: Pin Assignment: E: Emitter B: Base SOT-223
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UP1855
UP1855G-x-AA3-R
OT-223
QW-R207-011
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bc550 transistor
Abstract: BC550
Text: BC550 NPN Silicon Low Noise Transistor The transistor is subdivided into two groups, B and C according to its current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g
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BC550
100MHz
bc550 transistor
BC550
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BC550
Abstract: bc550 transistor
Text: BC550 NPN Silicon Low Noise Transistor The transistor is subdivided into two groups, B and C according to its current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g
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BC550
100MHz
300s-Duty
BC550
bc550 transistor
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transistor j25
Abstract: SOT-923F KTMC1060SC MMBT3904SL MMBT3906SL ktmc 150 j75
Text: MMBT3906SL C PNP Epitaxial Silicon Transistor Features E • General purpose amplifier transistor. B • Ultra small surface mount package for all types max 0.43mm tall • Suitable for general switching & amplification SOT-923F • Well suited for portable application
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MMBT3906SL
OT-923F
MMBT3904SL
MMBT3906SL
transistor j25
SOT-923F
KTMC1060SC
ktmc
150 j75
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bc550 PIN
Abstract: BC550
Text: BC550 NPN Silicon Low Noise Transistor The transistor is subdivided into two groups, B and C according to its current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g
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BC550
100MHz
bc550 PIN
BC550
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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transistor smd za
Abstract: smd transistor JJ jb smd ic smd transistor sy BUD7312
Text: S B _ BUD7312 ▼ Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT • Very low dynamic saturation • HIGH SPEED technology • Very low operating temperature
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BUD7312
BUD7312
Collec-Jul-99
22-Jul-99
transistor smd za
smd transistor JJ
jb smd ic
smd transistor sy
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TRANSISTOR G13
Abstract: 702 TRANSISTOR npn 13701
Text: ALLEGRO MICROSYSTEMS INC 13 » • DSDM338 QOOSbMl b B A L 6 R T - ^ l- o i PROCESS BAA Process BAA NPN Small-Signal Transistor This double-diffused, silicon epitaxial planar de vice is designed for general-purpose use. Selected versions of the Process BAA NPN transistor find
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0003b41
QS0433Ã
DG03Li42
TRANSISTOR G13
702 TRANSISTOR npn
13701
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transistor c 548
Abstract: transistor C 548 B transistor 547 b transistor C 547 c transistor c 548 c C 547 B C 547 transistor transistor b 548 transistor C 547 C 547 C
Text: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AMPLIFIER . HIGH VO LT A G E : BC546, V CEo=65V • L O W NOISE: BC549, B C5S0 • Complement to BC556 . B C 560 ABSOLUTE MAXIMUM RATINGS <TA=25t C h aracte ristic Sym b o l Collector Base Voltage
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BC546/547/548/549/550
BC546,
BC549,
BC556
BC546
BC547/550
BC548/549
BC546
BC547/550
BC548/549/550
transistor c 548
transistor C 548 B
transistor 547 b
transistor C 547 c
transistor c 548 c
C 547 B
C 547 transistor
transistor b 548
transistor C 547
C 547 C
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42t sot-23
Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW61B
BCX716
BCX71J
BCW60
42t sot-23
BCD Schalter
TFK BB
transistor BC 458
BCX 458
TFK AF
tfk s 154 p
am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716
tfk 715
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Untitled
Abstract: No abstract text available
Text: • b b 5 3 c]31 O O S S T S 1! «APX N AMER PHILIPS/DISCRETE BST72A b7E I> ; v N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use in telephone ringer circuits and fo r application with relay, high-speed and line-transformer drivers.
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bb53c
BST72A
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PDF
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transistor 131 8D
Abstract: transistor k 3728 QBE+61.2+dp2
Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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BLY90
transistor 131 8D
transistor k 3728
QBE+61.2+dp2
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Untitled
Abstract: No abstract text available
Text: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX93A
tbS3T31
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BLY90
Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
Text: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran
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711002b
BLY90
T-33-13
7z67566
BLY90
Wf VQE 23 F
WE VQE 23 E
wf vqe 23
WF VQE 11 E
WF VQE 23 E
WE VQE 11 E
IEC134
philips Trimmer 60 pf
WF VQE 23 D
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