TRANSISTOR B 138 Search Results

TRANSISTOR B 138 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR B 138 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor s11 s12 s21 s22 Abstract: NE856M02-T1-AZ NE856M02 Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor	Original	PDF	OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ
016p Abstract: NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011 Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP	Original	PDF	NE856 016p NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011
transistor NEC D 882 p Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A Text: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP	Original	PDF	NE856 transistor NEC D 882 p transistor c 1349 Transistor BF 479 NE85630-T1-A
IPP050N06NG Abstract: diode a43 IPB050N06NG Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; D4@A8 >= I9 . I ,&/ X" ( 6 O R >? 4@0B 8=6 B	Original	PDF	IPP050N06N IPB050N06N IPP050N06NG diode a43 IPB050N06NG
BFG32 Abstract: No abstract text available Text: P h ilip s Sem iconductors b b SB ^ B l O O B im b 7^5 • Product specification APX £ PNP 5 GHz wideband transistor BFG32 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING PNP transistor in a four-lead dual-emitter plastic SOT103 envelope. It is designed for application in	OCR Scan	PDF	BFG32 OT103 BFG96. BFG32
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan	PDF
transistor marking WV2 Abstract: No abstract text available Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated	OCR Scan	PDF	FQ67/B FQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99 transistor marking WV2
Untitled Abstract: No abstract text available Text: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.	OCR Scan	PDF	0Q247fll BFG17A OT143.
D137 transistor Abstract: D135 BD139B BD139 bd137b BD136 Text: BD135/137/139 NPN EPITAXIAL SILICO N TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136, B D 138 and B D 140 respectively ABSO LUTE MAXIMUM RATINGS Symbol Characteristic Collector B ase Voltage Collector Emitter Voltage	OCR Scan	PDF	BD135/137/139 O-126 BD136, 150mA 500mA, D137 transistor D135 BD139B BD139 bd137b BD136
BFQ65 Abstract: No abstract text available Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz	OCR Scan	PDF	QQ31S BFQ65 BFQ65
BFG65 Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332 Text: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .	OCR Scan	PDF	BFG65 OT103) MSB037 OT103. BFG65 transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332
BFG134 Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379 Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for	OCR Scan	PDF	BFG134 BFG134 bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
BFG134 Abstract: BJE 247 Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for	OCR Scan	PDF	3131S BFG134 OT103 OT103. BFG134 BJE 247
P3H7 Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	PDF	fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma

bd136 N Abstract: BD139 p BD136 BD139 to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO-128 • Complement to B D 135, B D 137 and BD139 respectively A BSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage BD136 BD138 BD140 Collector Emitter Voltage BD136	OCR Scan	PDF	BD136/138/140 O-128 BD139 BD136 BD138 BD140 500mA, bd136 N BD139 p to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.	OCR Scan	PDF	BFP96 OT173X BFQ32C.
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base	OCR Scan	PDF	bb53131 BC517.
transistor s49 Abstract: KS624530 powerex ks62 Text: m H B XX KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in	OCR Scan	PDF	KS624530 Amperes/600 transistor s49 KS624530 powerex ks62
BLF245 Abstract: sot123 package VHF transistor amplifier circuit Text: Philips Semiconductors tb S B T B l GGSTTSB SOT M APX Product specification VHF power MOS transistor BLF245 N AUER PHILIPS/DISCRETE b^E T> PIN CONFIGURATION FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	PDF	BLF245 OT123 -SOT123 MBAJ79 BLF245 sot123 package VHF transistor amplifier circuit
s3331 Abstract: No abstract text available Text: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily	OCR Scan	PDF	0031SSD BFQ33C OT173 s3331
Untitled Abstract: No abstract text available Text: Philips Sem iconductors b b S 3T 31 OOBT^SB SOT M APX Product specification VH F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability	OCR Scan	PDF	BLF245 OT123 OT123
transistor bt 808 Abstract: transistor 1548 b Text: b b S a ^ l 00250bb 3b0 H A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b?E T> BFQ67 PINNING • High power gain PIN • Low noise figure 1 base DESCRIPTION • High transition frequency 2	OCR Scan	PDF	00250bb BFQ67 transistor bt 808 transistor 1548 b
BT 816 transistor Abstract: PA 1515 transistor 9921 transistor Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure	OCR Scan	PDF	BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor
philips 433-2 Abstract: BFQ65 b 647 transistor philips 433-2 npn npn 1349 0 227 100 203 433-2 npn EC 401 TRANSISTOR 702 TRANSISTOR npn philips 1965 Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor PHILIPS international DESCRIPTION BFQ65 SbE ]> 7 1 1 0 0 2 b DOMSMôfl ISb • P H I N PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz	OCR Scan	PDF	BFQ65 philips 433-2 BFQ65 b 647 transistor philips 433-2 npn npn 1349 0 227 100 203 433-2 npn EC 401 TRANSISTOR 702 TRANSISTOR npn philips 1965

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TRANSISTOR B 138 Search Results

TRANSISTOR B 138 Result Highlights (5)

TRANSISTOR B 138 Datasheets Context Search

transistor s11 s12 s21 s22

016p

transistor NEC D 882 p

IPP050N06NG

BFG32

2sb504

transistor marking WV2

Untitled

D137 transistor

BFQ65

BFG65

BFG134

BFG134

P3H7

bd136 N

Untitled

Untitled

transistor s49

BLF245

s3331

Untitled

transistor bt 808

BT 816 transistor

philips 433-2