TRANSISTOR ATF Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features

marking 557 SOT143

Contextual Info: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor

power Junction FET advantages and disadvantages

Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor

BUK481-60A

Abstract: F6 sot223
Contextual Info: b^E J> N AUER PHILIPS/DISCRETE • bbS3T31 DG3G71S bl7 BiAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

F18002

Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS

BLW80

Abstract: transistor D 2578 transistor rf m 1104
Contextual Info: , iJna. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the

BLV97CE

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171

Contextual Info: Gallium Arsenide Field Effect Transistors Characteristics The Gallium Arsenide field effect transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide. This

Contextual Info: Gallium A rsenide Field Effect T ransistors The Gallium Arsenide field effect transistor is a semicon­ ductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide.

fet ft 20 GHZ

Abstract: transistor atf ATF-36xxx high power FET transistor s-parameters
Contextual Info: Gallium Arsenide␣ Field Effect Transistors Characteristics The Gallium Arsenide field effect transistor is a semiconductor device with amplification due to voltage gain. The advantages GaAs FETs have over other transistor types stem from the intrinsic high mobility of electrons in gallium arsenide. This

BD807

Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809
Contextual Info: MOT O RO LA SC XSTRS/R F 15E D | t>3b?2S4 GGfl47bl 5 | 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

BLW85

Contextual Info: ^£m.L-Cona\j.ctoi LPiodueti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and

kl2 t1 transistor

Abstract: FZ 300 R 06 KL
Contextual Info: FZ 300 R 06 KL Transistor Transistor Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,1 R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values 600 V 300 A R th C K V c es pro Baustein / per module

BLW96

Contextual Info: ].£.I±£.L ^zml-t-onauckoi iJ^iodueti, Line. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,

GaAs FET operating junction temperature

Abstract: 5257 transistor chip die hp transistor HP transistor cross reference mtt2
Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. I. Thermal Resistance Thermal Resistance . 1 A. Definition .

ATF-36077

Abstract: ATF-36077-STR transistor atf 36077 hemt lnb ATF pHEMT TRANSISTOR zo 109 ma
Contextual Info: ATF-36077 2–18 GHz Ultra Low Noise Pseudomorphic HEMT Data Sheet Description Features AvagoTechnologies' ATF-36077 is an ultra-low-noise Pseudo­ morphic High Electron Mobility Transistor PHEMT , packaged in a low parasitic, surface-mountable ceramic package.

agilent pHEMT transistor

Abstract: M2031 ATF-36077 Die Model TRANSISTOR A114 transistor D 2394 36077 ATF-36077 M2003
Contextual Info: Agilent ATF-36077 PHEMT FET Reliability Data Sheet Description The devices referenced on this data sheet are made using the Agilent Technology Pseudomorphic High Electron Mobility Transistor PHEMT process. Life Tests The following cumulative test results have been obtained by

circuit diagram of hearing aid using transistors

Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter ATF54143 circuit diagram of digital hearing aid AN1222 IMT-2000 JP503
Contextual Info: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a

ATF-13736

Abstract: DB1415 ATF-13736-STR ATF-13736-TR1 ATF13736
Contextual Info: 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features Description • Low Noise Figure: 1.8 dB Typical at 12 GHz The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

Toko inductor 20211

Abstract: AMP2300 Transistor S 40443 AN-G005 ATF-21186 Toko 20211 low noise design ATF 10136 INA-02184 LTC1044CS8 MSA-0686
Contextual Info: Low Noise and Moderate Power Amplifiers Using the ATF-21186 Application Note 1064 Introduction This application note describes the use of a low cost Gallium Arsenide Field Effect Transistor GaAs FET designed specifically for the VHF through 2500 MHz frequency range. The Agilent

Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

GHZ micro-X ceramic Package

Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

ATF-54143 application notes

Abstract: ATF54143.s2p ATF-54143 atf54143 pHEMT Curtice AN1222 ATF54143 BCV62B agilent pHEMT transistor agilent ads
Contextual Info: A 802.11a WLAN Driver Amplifier using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor Application Note 1286 Introduction Device Selection The driver amplifiers described in this application note are for use in applications covering 5.0 GHz to 5.8 GHz. This frequency range