TRANSISTOR AND IGBT Search Results

IGBT/MOSFET Gate Drive

Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
Contextual Info: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it

advantage and disadvantage of igbt

Abstract: HFBR1531Z HFBR-1522ETZ
Contextual Info: Galvanic isolation for IGBT-Driver White Paper By Michael Wappmannsberger Usually, an IGBT Insulated Gate Bipolar Transistor is described in the following way: "An IGBT is a combination of a field effect transistor and a bipolar transistor where an N-channel FET controls a bipolar transistor". Although this sentence

fgt313

Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156

CPH5524

Contextual Info: Ordering number : ENA0859A CPH5524 Bipolar Transistor http://onsemi.com – 50V, (–)6A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density

siemens igbt chip

Abstract: Semiconductor Group igbt break resistor in igbt bup 314 siemens igbt application note
Contextual Info: IGBT Insulated Gate Bipolar Transistor 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only difference lies in the additional

IGBT PIN CONFIGURATION

Abstract: GN2470 400CA IC SR03x 700V mos GN2470K4-G SR036 SR037 B1130 SR03x
Contextual Info: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. ► Low voltage drop at high currents ► Optimized for use with the Supertex SR036 and

vq 123

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

tme 126

Abstract: MGW12N120 IC9012 Bipolar WPC
Contextual Info: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.

BUK854-500IS

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in automotive ignition applications, and other general purpose

Contextual Info: Index DT 94-4 TRADE-OFF CONSIDERATIONS BETWEEN EFFICIENCY AND SHORT CIRCUIT CAPABILITY IN IGBTS By Rahul Chokhawala On-state voltage drop, V CE sat There is a fundamental device trade-off between short circuit withstand time, tsc, and transistor current-gain. The higher the gain of the transistor,

BUK854800A

Abstract: Bipolar Transistor IGBT buk854-800a BUK854
Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

transistor LC 945

Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

pja 09

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP21N60E Insulated Gate Bipolar Transistor N-Channe! Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

gp20n60

Abstract: transistor fall time MJ10
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Bipolar Transistor IGBT

Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

lc 945 p transistor

Abstract: lc 945 transistor
Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

igbt 800A

Abstract: BUK856-800A transistor parameters igbt philips
Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

BUK854-800 applications

Abstract: BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt
Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC

IGBT 50 amp 1000 volt

Abstract: MGP20N60U
Contextual Info: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N60U Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high