Untitled
Abstract: No abstract text available
Text: HN3G01J TOSHIBA TRANSISTOR SILICON N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR HN3G01J High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications Unit in mm Absolute Maximum Ratings Ta = 25°C
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HN3G01J
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2SC2945
Abstract: QK SOT89 2SC2954 mark qk sot
Text: DATA SHEET SILICON TRANSISTOR 2SC2954 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC2954 is an NPN epitaxial silicon transistor disigned for Unit: mm low noise wide band amplifier and buffer amplifier of OSC, for VHF
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2SC2954
2SC2954
2SC2945
QK SOT89
mark qk sot
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NTE194
Abstract: No abstract text available
Text: NTE194 Silicon NPN Transistor Audio Power Amplifier Description: The NTE194 is a silicon NPN amplifier transistor packaged in a standard TO92 case. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
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NTE194
NTE194
100MHz
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC – 70/SOT–323 package
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MSB1218A-RT1
70/SOTâ
inch/3000
MSB1218A-RT1â
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BF245 A spice
Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
Text: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and
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100kHz
BF245 A spice
BF245 spice
electronic power generator using transistor
BF245A spice
BF245
BF245 B spice
BF245 TRANSISTOR
transistor BF245
Fet BF245
BF245 spice model
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top marking code F9
Abstract: 723 voltage reference 2sa202
Text: 2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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2SA2029M3T5G
OT-723
2SA2029M3/D
top marking code F9
723 voltage reference
2sa202
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SOT-723
Abstract: 2SA2029M3T5G
Text: 2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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2SA2029M3T5G
OT-723
2SA2029M3/D
SOT-723
2SA2029M3T5G
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Untitled
Abstract: No abstract text available
Text: 2SA2029M3T5G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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2SA2029M3T5G
2SA2029M3/D
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k 2996
Abstract: LT505 PLID resistor 240 3y3 transistor
Text: Low Current, Peak Limiting Class A Amplifier LT505 DATA SHEET FEATURES DESCRIPTION • amplifier current typically 53 µA The LT505 is a low current, low voltage monolithic integrated circuit amplifier. It is comprised of an operational amplifier driving a single transistor class A output stage with open
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LT505
C-101,
k 2996
PLID
resistor 240
3y3 transistor
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Untitled
Abstract: No abstract text available
Text: Low Current, Peak Limiting Class A Amplifier LT505 DATA SHEET FEATURES DESCRIPTION • amplifier current typically 53 µA The LT505 is a low current, low voltage monolithic integrated circuit amplifier. It is comprised of an operational amplifier driving a single transistor class A output stage with open
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LT505
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Untitled
Abstract: No abstract text available
Text: 2SC5658M3T5G, 2SC5658RM3T5G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board
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2SC5658M3T5G,
2SC5658RM3T5G
OT-723
7-inch/3000
2SC5658M3/D
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222259116641
Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4
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BLV859
AN98013
SCA57
222259116641
222259016629
bvc62
AN98013
BD139 transistor circuit diagram
BLV589
c38 transistor
RG4M
UHF amplifier module
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M57917L
Abstract: sinewave inverter QM50DY "MITSUBISHI HYBRID" QM10
Text: MITSUBISHI HYBRID ICs M57917L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57917L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM10XX, QM20XX, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due
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M57917L
M57917L
QM10XX,
QM20XX,
21MAX.
2500Vrms
sinewave inverter
QM50DY
"MITSUBISHI HYBRID"
QM10
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M57950L
Abstract: 10 100 1000 base T Transformer module m57950l 01r QM50DY HL 100 Transistor
Text: MITSUBISHI HYBRID ICs M57950L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57950L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM30DY, QM50DY, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due
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M57950L
M57950L
QM30DY,
QM50DY,
10-pin
29MAX.
20MAX.
2500Vrms
1/2QM50DY
10 100 1000 base T Transformer module
m57950l 01r
QM50DY
HL 100 Transistor
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MSB1218A-RT1G
Abstract: MSB1218A
Text: MSB1218A- RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface
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MSB1218A-
SC-70/SOT-323
MSB1218A-RT1/D
MSB1218A-RT1G
MSB1218A
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Untitled
Abstract: No abstract text available
Text: MSB1218A- RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface
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MSB1218A-
SC-70/SOT-323
MSB1218A-RT1/D
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MPSU45
Abstract: transistor mpsu45
Text: , Una. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MPS-U45 (SILICON) NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . . designed for amplifier and driver applications,
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MPS-U45
MPSU45
transistor mpsu45
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Untitled
Abstract: No abstract text available
Text: 2SC5658K3T5G Product Preview NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board
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2SC5658K3T5G
OT-723
7-inch/3000
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Untitled
Abstract: No abstract text available
Text: 2SA2029K3T5G Product Preview PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board
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2SA2029K3T5G
OT-723
Collector200
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Untitled
Abstract: No abstract text available
Text: 2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT-416 package which is designed for low power surface mount applications, where
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2SC4617G,
S2SC4617G
75/SOT-416
inch/3000
2SC4617/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon General Purpose Amplifier Transistor MSD1819A-RT1 Motorola Preferred Devices This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package
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OCR Scan
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MSD1819A-RT1
SC-70/SOT-323
7-inch/3000
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications High hFE Applications Package Dimensions • Low-frequency general-purpose amplifier, drivers, muting circuits. unit:mm 2038A [2SC4705]
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EN3484
2SC4705
2SC4705]
25max
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Untitled
Abstract: No abstract text available
Text: EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board
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OT-563
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S2SC4617G
Abstract: No abstract text available
Text: 2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT-416 package which is designed for low power surface mount applications, where
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2SC4617G,
S2SC4617G
SC-75/SOT-416
inch/3000
AEC-Q101
SC-75
2SC4617/D
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