TRANSISTOR AMPLIFIER 3 GHZ Search Results

2SC5604

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted

2SC4703-T1

Abstract: NE46234 2SC4703 2SC470-3
Contextual Info: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage

SCA-16

Abstract: gaas Low Noise Amplifier
Contextual Info: SCA-16 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-16 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: SCA-16 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-16 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: SCA-5 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-5 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

SCA-15

Contextual Info: SCA-15 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-15 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Philips Application Note ECO6907

Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2S C 4 0 9 3 is an NPN silicon epitaxial transistor designed for low PACKAGE DIMENSIONS Units: mm noise amplifier at VH F, U H F and C A TV band.

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4536 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2 S C 4 5 3 6 is designed for use in middle power, low distortion low noise figure RF amplifier. It features excellent linearity and large dynamic

nec 2501

Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .

ic nec 2501

Abstract: nec 2501 2501 NEC 2SC4703-T1 2SC4703 2SC470-3 nec RF package SOT89
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .

Contextual Info: SCA-6 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-6 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown

BFR90 transistor

Abstract: BFR90
Contextual Info: BFR90 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

BFR92 transistor

Abstract: bfr92
Contextual Info: BFR92 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

BFR96TS

Contextual Info: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

transistor BFR91A

Abstract: BFR91A
Contextual Info: BFR91A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

Contextual Info: BFR93 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

Contextual Info: SCA-7 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-7 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown

Contextual Info: SCA-7 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-7 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown

Contextual Info: BFR93 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

5343 transistor

Abstract: EDS-102421
Contextual Info: SCA-6 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices’ SCA-6 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown

Contextual Info: BFR90A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

J51-20

Abstract: BFR92 transistor
Contextual Info: BFR92 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

Contextual Info: BFR91 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039