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    TRANSISTOR ALY Search Results

    TRANSISTOR ALY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ALY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC3875

    Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
    Text: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage


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    2SC3875 OT-23 150mW 100mA, 100MHz 2SC3875-G 2SC3875-Y 2SC3875-GR 2SC3875 ALY TRANSISTOR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr Elite Enterprises PDF

    ALY TRANSISTOR

    Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. KTC3875 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23


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    KTC3875 KTA1504. OT-23 BL/SSSTC056 ALY TRANSISTOR ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING PDF

    COIL IGNITION

    Abstract: MGB15N35CL MGB15N35CLT4 MGC15N35CL MGP15N35CL direct fuel Injection gp15n35cl
    Text: MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    MGP15N35CL, MGB15N35CL, MGC15N35CL r14525 MGP15N35CL/D COIL IGNITION MGB15N35CL MGB15N35CLT4 MGC15N35CL MGP15N35CL direct fuel Injection gp15n35cl PDF

    MGB15N40CL

    Abstract: MGB15N40CLT4 MGC15N40CL MGP15N40CL MGP15N40CL-D GB15N40CL
    Text: MGP15N40CL, MGB15N40CL, MGC15N40CL Internally Clamped N-Channel IGBT http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    MGP15N40CL, MGB15N40CL, MGC15N40CL r14525 MGP15N40CL/D MGB15N40CL MGB15N40CLT4 MGC15N40CL MGP15N40CL MGP15N40CL-D GB15N40CL PDF

    Untitled

    Abstract: No abstract text available
    Text: MGP15N43CL, MGB15N43CL, MGC15N43CL Product Preview Internally Clamped http://onsemi.com N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses


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    MGP15N43CL, MGB15N43CL, MGC15N43CL r14525 MGP15N43CL/D PDF

    Marking ALY

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


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    OT-23 KTC3875 OT-23 KTA1504 100mA, Marking ALY PDF

    QSC60xx

    Abstract: QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22
    Text: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit OVP with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low


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    NUS6189MN NUS6189MN/D QSC60xx QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22 PDF

    ALY TRANSISTOR

    Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    OT-23 KTC3875 OT-23 KTA1504 100mA, ALY TRANSISTOR ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR PDF

    AN569

    Abstract: MMSF3350 MMSF3350R2 SMD310
    Text: MMSF3350 WaveFET HDTMOS Single N-Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.


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    MMSF3350 r14525 MMSF3350/D AN569 MMSF3350 MMSF3350R2 SMD310 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMSF3350 WaveFET HDTMOS™ Single N−Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area.


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    MMSF3350 MMSF3350/D PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage


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    OT-23 KTC3875 OT-23 PDF

    ALY TRANSISTOR

    Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR
    Text: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 — Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    KTC3875 OT-23 OT-23 KTA1504 100mA, ALY TRANSISTOR ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR PDF

    aly smd

    Abstract: transistor smd ALG
    Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    KTC3875 OT-23 100mA, aly smd transistor smd ALG PDF

    transistor smd ALG

    Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10
    Text: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity


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    KTC3875 OT-23 100mA, transistor smd ALG ALY SMD smd transistor marking KTC3875 transistor smd aly 10 PDF

    KTC3875

    Abstract: ALG Transistor MARKING
    Text: KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    High hFE Low noise Complementary to KTA1504 A L 3 3 C B Top View 1 1 CLASSIFICATION OF hFE


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    KTC3875 OT-23 KTA1504 KTC3875-Y KTC3875-GR 100mA, 22-Feb-2013 KTC3875 ALG Transistor MARKING PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


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    OT-23 KTC3875 OT-23 PDF

    a20 so-8

    Abstract: smd mosfet so-8 transistor smd marking CS 2f3 smd 1N4148 1N5818 CS51033 CS51033EDR8 CS51033EN8 CS51033GD8
    Text: CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in DC–DC converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor,


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    CS51033 CS51033 r14525 CS51033/D a20 so-8 smd mosfet so-8 transistor smd marking CS 2f3 smd 1N4148 1N5818 CS51033EDR8 CS51033EN8 CS51033GD8 PDF

    CS1515

    Abstract: No abstract text available
    Text: Back CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in DC–DC converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor,


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    CS51033 r14525 CS51033/D CS1515 PDF

    CS51033

    Abstract: CS51033GD8 CS51033GDR8 CS51033YD8 CS51033YDR8 IRF7404 1N4148 1N5818 1N5821
    Text: CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in dc–dc converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor, fixed


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    CS51033 CS51033 r14525 CS51033/D CS51033GD8 CS51033GDR8 CS51033YD8 CS51033YDR8 IRF7404 1N4148 1N5818 1N5821 PDF

    ALY TRANSISTOR

    Abstract: transistor ALY 8 transistor ALY
    Text: POSITIVE THERMISTORS "Posi-R" • nichicon For Overcurrent Protection Characteristic of ZPC4MCE100D When som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor


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    ZPC4MCE100D ALY TRANSISTOR transistor ALY 8 transistor ALY PDF

    ALY TRANSISTOR

    Abstract: transistor ALY
    Text: POSITIVE THERMISTORS "Posi-R" • For Overcurrent Protection W hen som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor at the transformer or the switching power supply generates heat


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    ZPC4MCE100A ALY TRANSISTOR transistor ALY PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR mmm TECHNICAL DATA 2N4416A N-Channel, Small-Signal Field Effect Transistor M A X IM U M R A T IN G S Rating Symbol Value Unit Drain-Source Voltage Vos 35 Vdc Drain-Gate Voltage VDG 35 Vdc Gate-Source Voltage VGS -3 5 Gate Current Storage Temperature Range


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    2N4416A PDF

    Untitled

    Abstract: No abstract text available
    Text: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r


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    D-7030 PDF

    transistor parameters

    Abstract: 2x104 n-mosfet transistor oscillator circuit transistor use in oscillator
    Text: C ircu it S e n s itiv ity A n a ly sis in T erm s o f P r o c e s s P a ra m e te r s M .J. van D o rt1 and D .B .M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands. A n ew m eth o d o lo g y for s e n s itiv ity an alysis a t circu it


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    -2x104 2x104 944-IEDM transistor parameters 2x104 n-mosfet transistor oscillator circuit transistor use in oscillator PDF