2SC3875
Abstract: ALY TRANSISTOR 2SC3875-GR ALG Transistor 2SC3875Y Elite Enterprises (H.K.) transistor ALY 2sc3875gr 2SC3875-Y Elite Enterprises
Text: 2SC3875 NPN Epitaxial Silicon Transistor SOT-23 GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: VCEO = 50V Collector Dissipation: PC = 150mW Absolute Maximum Ratings TA=25oC Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage
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2SC3875
OT-23
150mW
100mA,
100MHz
2SC3875-G
2SC3875-Y
2SC3875-GR
2SC3875
ALY TRANSISTOR
ALG Transistor
2SC3875Y
Elite Enterprises (H.K.)
transistor ALY
2sc3875gr
Elite Enterprises
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ALY TRANSISTOR
Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING aly sot23 transistor aly 10 KTC3875 ALY TRANSISTOR NPN SOT23 marking ALG ALG Transistor MARKING
Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1504. z Excellent HFE Linearity. z Low noise. KTC3875 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23
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KTC3875
KTA1504.
OT-23
BL/SSSTC056
ALY TRANSISTOR
ALG TRANSISTOR
transistor ALY
ALY Transistor MARKING
aly sot23
transistor aly 10
KTC3875
ALY TRANSISTOR NPN
SOT23 marking ALG
ALG Transistor MARKING
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COIL IGNITION
Abstract: MGB15N35CL MGB15N35CLT4 MGC15N35CL MGP15N35CL direct fuel Injection gp15n35cl
Text: MGP15N35CL, MGB15N35CL, MGC15N35CL Internally Clamped N-Channel IGBT http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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MGP15N35CL,
MGB15N35CL,
MGC15N35CL
r14525
MGP15N35CL/D
COIL IGNITION
MGB15N35CL
MGB15N35CLT4
MGC15N35CL
MGP15N35CL
direct fuel Injection
gp15n35cl
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MGB15N40CL
Abstract: MGB15N40CLT4 MGC15N40CL MGP15N40CL MGP15N40CL-D GB15N40CL
Text: MGP15N40CL, MGB15N40CL, MGC15N40CL Internally Clamped N-Channel IGBT http://onsemi.com This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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MGP15N40CL,
MGB15N40CL,
MGC15N40CL
r14525
MGP15N40CL/D
MGB15N40CL
MGB15N40CLT4
MGC15N40CL
MGP15N40CL
MGP15N40CL-D
GB15N40CL
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Untitled
Abstract: No abstract text available
Text: MGP15N43CL, MGB15N43CL, MGC15N43CL Product Preview Internally Clamped http://onsemi.com N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped protection for use in inductive coil drivers applications. Primary uses
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MGP15N43CL,
MGB15N43CL,
MGC15N43CL
r14525
MGP15N43CL/D
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Marking ALY
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
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OT-23
KTC3875
OT-23
KTA1504
100mA,
Marking ALY
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QSC60xx
Abstract: QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22
Text: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit OVP with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low
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NUS6189MN
NUS6189MN/D
QSC60xx
QUALCOMM QFN
QFN22
NUS6189MNTWG
qsc60
QUALCOMM Reference design
Drive Base BJT
QFN-22
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ALY TRANSISTOR
Abstract: ALG TRANSISTOR transistor ALY ALY Transistor MARKING KTC3875 aly sot23 transistor aly 10 alg sot-23 KTA1504 ALY 01 TRANSISTOR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 SOT-23 TRANSISTOR NPN FEATURES • High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
KTC3875
OT-23
KTA1504
100mA,
ALY TRANSISTOR
ALG TRANSISTOR
transistor ALY
ALY Transistor MARKING
KTC3875
aly sot23
transistor aly 10
alg sot-23
KTA1504
ALY 01 TRANSISTOR
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AN569
Abstract: MMSF3350 MMSF3350R2 SMD310
Text: MMSF3350 WaveFET HDTMOS Single N-Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area.
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MMSF3350
r14525
MMSF3350/D
AN569
MMSF3350
MMSF3350R2
SMD310
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Untitled
Abstract: No abstract text available
Text: MMSF3350 WaveFET HDTMOS™ Single N−Channel Field Effect Transistor Power Surface Mount Products http://onsemi.com WaveFET devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area.
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MMSF3350
MMSF3350/D
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage
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OT-23
KTC3875
OT-23
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ALY TRANSISTOR
Abstract: ALG TRANSISTOR ALY Transistor MARKING transistor ALY transistor aly 10 sot-23 MARKING ALG alg sot-23 ALY 23 aly sot23 ALY 01 TRANSISTOR
Text: KTC3875 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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KTC3875
OT-23
OT-23
KTA1504
100mA,
ALY TRANSISTOR
ALG TRANSISTOR
ALY Transistor MARKING
transistor ALY
transistor aly 10
sot-23 MARKING ALG
alg sot-23
ALY 23
aly sot23
ALY 01 TRANSISTOR
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aly smd
Abstract: transistor smd ALG
Text: Transistors SMD Type Epitaxial Planar NPN Transistor KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity
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KTC3875
OT-23
100mA,
aly smd
transistor smd ALG
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transistor smd ALG
Abstract: ALY SMD smd transistor marking KTC3875 transistor smd aly 10
Text: Diodes IC Transistors Transistor T SMD Type Product specification KTC3875 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 ●Low Noise : NF=1dB Typ. , 10dB(Max.). 1 0.55 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). +0.1 1.3-0.1 +0.1 2.4-0.1 ● Excellent hFE Linearity
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KTC3875
OT-23
100mA,
transistor smd ALG
ALY SMD
smd transistor marking KTC3875
transistor smd aly 10
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KTC3875
Abstract: ALG Transistor MARKING
Text: KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES High hFE Low noise Complementary to KTA1504 A L 3 3 C B Top View 1 1 CLASSIFICATION OF hFE
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KTC3875
OT-23
KTA1504
KTC3875-Y
KTC3875-GR
100mA,
22-Feb-2013
KTC3875
ALG Transistor MARKING
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Untitled
Abstract: No abstract text available
Text: SOT-23 Plastic-Encapsulate Transistors KTC3875 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.15 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range
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OT-23
KTC3875
OT-23
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a20 so-8
Abstract: smd mosfet so-8 transistor smd marking CS 2f3 smd 1N4148 1N5818 CS51033 CS51033EDR8 CS51033EN8 CS51033GD8
Text: CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in DC–DC converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor,
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CS51033
CS51033
r14525
CS51033/D
a20 so-8
smd mosfet so-8
transistor smd marking CS
2f3 smd
1N4148
1N5818
CS51033EDR8
CS51033EN8
CS51033GD8
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CS1515
Abstract: No abstract text available
Text: Back CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in DC–DC converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor,
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CS51033
r14525
CS51033/D
CS1515
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CS51033
Abstract: CS51033GD8 CS51033GDR8 CS51033YD8 CS51033YDR8 IRF7404 1N4148 1N5818 1N5821
Text: CS51033 Fast PFET Buck Controller The CS51033 is a switching controller for use in dc–dc converters. It can be used in the buck topology with a minimum number of external components. The CS51033 consists of a 1.0 A power driver for controlling the gate of a discrete P–channel transistor, fixed
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CS51033
CS51033
r14525
CS51033/D
CS51033GD8
CS51033GDR8
CS51033YD8
CS51033YDR8
IRF7404
1N4148
1N5818
1N5821
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ALY TRANSISTOR
Abstract: transistor ALY 8 transistor ALY
Text: POSITIVE THERMISTORS "Posi-R" • nichicon For Overcurrent Protection Characteristic of ZPC4MCE100D When som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor
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ZPC4MCE100D
ALY TRANSISTOR
transistor ALY 8
transistor ALY
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ALY TRANSISTOR
Abstract: transistor ALY
Text: POSITIVE THERMISTORS "Posi-R" • For Overcurrent Protection W hen som ething abnorm al occurs at the load such as a transistor circuit or a small-type motor, an abnormal current rushes into the power source circuit. Then, a power transistor at the transformer or the switching power supply generates heat
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ZPC4MCE100A
ALY TRANSISTOR
transistor ALY
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR mmm TECHNICAL DATA 2N4416A N-Channel, Small-Signal Field Effect Transistor M A X IM U M R A T IN G S Rating Symbol Value Unit Drain-Source Voltage Vos 35 Vdc Drain-Gate Voltage VDG 35 Vdc Gate-Source Voltage VGS -3 5 Gate Current Storage Temperature Range
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2N4416A
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Untitled
Abstract: No abstract text available
Text: M S Ic k S í application noií 944-1 ,'-'J • ¿? ' - I-'.Í-.T . ' 1'.• . -,. - r*— . . ■*- . ■ r i' : , r • " 5 -„v ; : ■ ~ .-, . '7 V _,/ .-. ‘ ¡.V rV ■: >• ■■■ ■. , - Microwave Transistor Bias Considerations iv iin rn iA /a u p ira n s K T n r
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D-7030
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transistor parameters
Abstract: 2x104 n-mosfet transistor oscillator circuit transistor use in oscillator
Text: C ircu it S e n s itiv ity A n a ly sis in T erm s o f P r o c e s s P a ra m e te r s M .J. van D o rt1 and D .B .M . Klaassen Philips Research Laboratories, Prof. Holstlaan 4, 5656 A A Eindhoven, The Netherlands. A n ew m eth o d o lo g y for s e n s itiv ity an alysis a t circu it
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-2x104
2x104
944-IEDM
transistor parameters
2x104
n-mosfet
transistor oscillator circuit
transistor use in oscillator
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