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    TRANSISTOR ADOP Search Results

    TRANSISTOR ADOP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ADOP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC5603

    Abstract: marking TW
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


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    2SC5603 S21e2 2SC5603-T1 2SC5603 marking TW PDF

    2SC5604

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted


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    2SC5604 S21e2 2SC5604-T3 2SC5604 PDF

    2SA1784

    Abstract: 2SA1781
    Text: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .


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    EN3520 2SA1784/2SC4644 VCEO400V) 2SA17814/2SC4644] 2SA1784 2SA1784 2SA1781 PDF

    2SC4548E

    Abstract: 2SA1740 2SC4548 transistor 2sa1740
    Text: Ordering number:EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.


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    EN3188 2SA1740/2SC4548 2SA1740/2SC4548] 2SA1740 2SC4548E 2SA1740 2SC4548 transistor 2sa1740 PDF

    2SA1740

    Abstract: 2SC4548 ITR04445
    Text: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.


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    ENN3188 2SA1740/2SC4548 2SA1740/2SC4548] 25max 2SA1740 2SA1740 2SC4548 ITR04445 PDF

    free transistor and ic equivalent data

    Abstract: "transistor equivalent" transistor equivalent UD2195 R208
    Text: UNISONIC TECHNOLOGIES CO., LTD UD2195 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „ DESCRIPTION * The UTC UD2195 is designed for use in general purpose amplifier and low speed switching application. * Pb-free package process is adopted.


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    UD2195 UD2195 UD2195L UD2195G UD2195-AB3-R UD2195L-AB3-R UD2195G-AB3-R OT-89 QW-R208-043 free transistor and ic equivalent data "transistor equivalent" transistor equivalent R208 PDF

    2SC5606

    Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold


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    2SC5606 2SC5606-T1 2SC5606 transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504 PDF

    2SC5606

    Abstract: 2SC5606-T1 ic ta 7698
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold


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    2SC5606 2SC5606-T1 2SC5606 2SC5606-T1 ic ta 7698 PDF

    marking NEC rf transistor

    Abstract: nec npn rf
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted


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    NESG2107M33 NESG2107M33 NESG2107M33-T3 NESG2107M33-A NESG2107M33-T3-A marking NEC rf transistor nec npn rf PDF

    2SC5602

    Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA


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    2SC5602 S21e2 2SC5602-T1 2SC5602 2SC5602-T1 nec 8725 marking TW NEC 2561 PDF

    sot-223 code marking

    Abstract: transistor npn 2A sot 23 BTD2195
    Text: Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195L3 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted.


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    C654L3 BTD2195L3 BTD2195L3 OT-223 UL94V-0 sot-223 code marking transistor npn 2A sot 23 BTD2195 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6545 Ordering number : EN8953 MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.


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    EN8953 MCH6545 PDF

    NE66219

    Abstract: NEC66219 2SC5606
    Text: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package


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    NE66219 2SC5606 NEC66219 2SC5606 NE66219-T1 2SC5606-T1 NE66219-A 2SC5606-A NE66219-T1-A 2SC5606-T1-A PDF

    2SC5606

    Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package


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    2SC5606 2SC5606-A 2SC5606-T1 2SC5606-T1-A M8E0904E 2SC5606 2SC5606-T1 ultra low noise NPN transistor nec microwave PDF

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet PDF

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


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    ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ PDF

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


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    ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPH5518 Ordering number : ENA0492A SANYO Semiconductors DATA SHEET CPH5518 PNP / NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density


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    CPH5518 ENA0492A CPH5518 CPH3116 CPH3216, A0492-8/8 PDF

    MCH6545

    Abstract: No abstract text available
    Text: MCH6545 Ordering number : EN8953 SANYO Semiconductors DATA SHEET MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.


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    MCH6545 EN8953 MCH6545 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6545 Ordering number : EN8953 SANYO Semiconductors DATA SHEET MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.


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    EN8953 MCH6545 PDF

    transistor A 564

    Abstract: S-AV8 2-13B1A 564 transistor S-AU4
    Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the


    OCR Scan
    TcS90 transistor A 564 S-AV8 2-13B1A 564 transistor S-AU4 PDF

    2SC4548

    Abstract: No abstract text available
    Text: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity


    OCR Scan
    2SA1740 250mm2 2SA1740/2SC4548 -----12SA1740/2SC4548 250mm2XOi 2SC4548 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 3520 i _ 2SA1784/2SC4644 No.3520 >' + 1 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused P lanar Silicon Transistor SAiYO High Voltage Driver Applications F e a tu re s • Adoption of MBIT process •High breakdown voltage Vceo —400V


    OCR Scan
    2SA1784/2SC4644 2SA1784 2SA1784/2SC4644 5170TA PDF

    10l82

    Abstract: 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor
    Text: Ordering number : EN 3520 2SA1784/2SC4644 i PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor S A t Y O i High Voltage Driver Applications F e a tu re s • Adoption of MBIT process - High breakdown voltage Vceo —400V


    OCR Scan
    2SA1784/2SC4644 2SA1784 2034/2034A SC-43 7tlt17D7b 10l82 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor PDF