2SC5603
Abstract: marking TW
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5603 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted
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2SC5603
S21e2
2SC5603-T1
2SC5603
marking TW
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2SC5604
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted
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2SC5604
S21e2
2SC5604-T3
2SC5604
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2SA1784
Abstract: 2SA1781
Text: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .
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EN3520
2SA1784/2SC4644
VCEO400V)
2SA17814/2SC4644]
2SA1784
2SA1784
2SA1781
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2SC4548E
Abstract: 2SA1740 2SC4548 transistor 2sa1740
Text: Ordering number:EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.
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EN3188
2SA1740/2SC4548
2SA1740/2SC4548]
2SA1740
2SC4548E
2SA1740
2SC4548
transistor 2sa1740
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2SA1740
Abstract: 2SC4548 ITR04445
Text: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.
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ENN3188
2SA1740/2SC4548
2SA1740/2SC4548]
25max
2SA1740
2SA1740
2SC4548
ITR04445
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free transistor and ic equivalent data
Abstract: "transistor equivalent" transistor equivalent UD2195 R208
Text: UNISONIC TECHNOLOGIES CO., LTD UD2195 Preliminary NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION * The UTC UD2195 is designed for use in general purpose amplifier and low speed switching application. * Pb-free package process is adopted.
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UD2195
UD2195
UD2195L
UD2195G
UD2195-AB3-R
UD2195L-AB3-R
UD2195G-AB3-R
OT-89
QW-R208-043
free transistor and ic equivalent data
"transistor equivalent"
transistor equivalent
R208
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2SC5606
Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
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2SC5606
2SC5606-T1
2SC5606
transistor 3504 nec
2SC5606-T1
NEC JAPAN 3504
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2SC5606
Abstract: 2SC5606-T1 ic ta 7698
Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold
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2SC5606
2SC5606-T1
2SC5606
2SC5606-T1
ic ta 7698
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marking NEC rf transistor
Abstract: nec npn rf
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification • SiGe technology adopted
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NESG2107M33
NESG2107M33
NESG2107M33-T3
NESG2107M33-A
NESG2107M33-T3-A
marking NEC rf transistor
nec npn rf
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2SC5602
Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA
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2SC5602
S21e2
2SC5602-T1
2SC5602
2SC5602-T1
nec 8725
marking TW
NEC 2561
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sot-223 code marking
Abstract: transistor npn 2A sot 23 BTD2195
Text: Spec. No. : C654L3 Issued Date : 2007.02.09 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD2195L3 Description The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted.
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C654L3
BTD2195L3
BTD2195L3
OT-223
UL94V-0
sot-223 code marking
transistor npn 2A sot 23
BTD2195
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Untitled
Abstract: No abstract text available
Text: MCH6545 Ordering number : EN8953 MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
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EN8953
MCH6545
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NE66219
Abstract: NEC66219 2SC5606
Text: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package
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NE66219
2SC5606
NEC66219
2SC5606
NE66219-T1
2SC5606-T1
NE66219-A
2SC5606-A
NE66219-T1-A
2SC5606-T1-A
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2SC5606
Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package
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2SC5606
2SC5606-A
2SC5606-T1
2SC5606-T1-A
M8E0904E
2SC5606
2SC5606-T1
ultra low noise NPN transistor
nec microwave
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diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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Untitled
Abstract: No abstract text available
Text: CPH5518 Ordering number : ENA0492A SANYO Semiconductors DATA SHEET CPH5518 PNP / NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
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CPH5518
ENA0492A
CPH5518
CPH3116
CPH3216,
A0492-8/8
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MCH6545
Abstract: No abstract text available
Text: MCH6545 Ordering number : EN8953 SANYO Semiconductors DATA SHEET MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
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MCH6545
EN8953
MCH6545
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Untitled
Abstract: No abstract text available
Text: MCH6545 Ordering number : EN8953 SANYO Semiconductors DATA SHEET MCH6545 PNP / NPN Epitaxial Planar Silicon Transistor Push-Pull Circuit Applications Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting.
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EN8953
MCH6545
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transistor A 564
Abstract: S-AV8 2-13B1A 564 transistor S-AU4
Text: 7.1. Precautions for handling RF Pow er Transistor 1 Mounting ceramic seal type transistor For mounting such a transistor as shown in the figure, on a printed circuit board or heat sink, it is ncessary to adopt either the method of making the lead level (Fig. 2, (a) or the
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TcS90
transistor A 564
S-AV8
2-13B1A
564 transistor
S-AU4
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2SC4548
Abstract: No abstract text available
Text: I Ordering number: EN 3188 2SA1740/2SC4548 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications F eatu res • High breakdown voltage • Adoption of MBIT process • Excellent hpElinearlity
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2SA1740
250mm2
2SA1740/2SC4548
-----12SA1740/2SC4548
250mm2XOi
2SC4548
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN 3520 i _ 2SA1784/2SC4644 No.3520 >' + 1 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused P lanar Silicon Transistor SAiYO High Voltage Driver Applications F e a tu re s • Adoption of MBIT process •High breakdown voltage Vceo —400V
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2SA1784/2SC4644
2SA1784
2SA1784/2SC4644
5170TA
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10l82
Abstract: 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor
Text: Ordering number : EN 3520 2SA1784/2SC4644 i PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor S A t Y O i High Voltage Driver Applications F e a tu re s • Adoption of MBIT process - High breakdown voltage Vceo —400V
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2SA1784/2SC4644
2SA1784
2034/2034A
SC-43
7tlt17D7b
10l82
2SA1784
2SC4644
TO-92 VCEO400V
2SAR
2tj transistor
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