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    TRANSISTOR A4T Search Results

    TRANSISTOR A4T Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A4T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-1312D33-M5T1U3

    Abstract: No abstract text available
    Text: S-1312 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.1_00 Seiko Instruments Inc., 2011 S-1312 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has the low current


    Original     		PDF S-1312 S-1312D33-M5T1U3

    S-1312B34

    Abstract: S-1312D33-M5T1U3 S1312A33-A4T1U3 S-1312 s-1312a33-a4t1u3 S-1312D13-A4T1U3 S-1312D18-A4T1U3 S-1312A18-A4T1U3 S-1312A16-A4T1U3 S-1312B14-A4T1U3
    Text: S-1312 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2_00 Seiko Instruments Inc., 2011 The S-1312 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has the low current


    Original     		PDF S-1312 S-1312B34 S-1312D33-M5T1U3 S1312A33-A4T1U3 s-1312a33-a4t1u3 S-1312D13-A4T1U3 S-1312D18-A4T1U3 S-1312A18-A4T1U3 S-1312A16-A4T1U3 S-1312B14-A4T1U3

    S-1312

    Abstract: S-1312A18-A4T1U3 S-1312D18-A4T1U3
    Text: S-1312 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2_01 Seiko Instruments Inc., 2011 The S-1312 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current


    Original     		PDF S-1312 S-1312A18-A4T1U3 S-1312D18-A4T1U3

    S-1312A12-A4T1U3

    Abstract: S-1312C27-A4T1U3 S-1312D18-A4T1U3 S-1312A10-M5T1U3 S-1312B33-M5T1U3 S-1312A13-M5T1U3 1312 SII HSNT S-1312 S-1312A33-A4T1U3
    Text: S-1312 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.0_00 Seiko Instruments Inc., 2011 S-1312 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has the low current


    Original     		PDF S-1312 S-1312A12-A4T1U3 S-1312C27-A4T1U3 S-1312D18-A4T1U3 S-1312A10-M5T1U3 S-1312B33-M5T1U3 S-1312A13-M5T1U3 1312 SII HSNT S-1312A33-A4T1U3

    Untitled

    Abstract: No abstract text available
    Text: S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.1_00 Seiko Instruments Inc., 2011-2012 The S-1333 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current


    Original     		PDF S-1333

    S-13R1A2J-M5T1U3

    Abstract: No abstract text available
    Text: S-13R1 Series REVERSE CURRENT PROTECTION CMOS VOLTAGE REGULATOR www.sii-ic.com Rev.1.1_00 Seiko Instruments Inc., 2012-2013 The S-13R1 Series, developed by using the CMOS technology, is a positive voltage regulator IC of 150 mA output current, which has low dropout voltage, high-accuracy output voltage and low current consumption.


    Original     		PDF S-13R1 S-13R1A2J-M5T1U3

    S-1333A10-A4T1U3

    Abstract: S-1333A28-M5T1U3
    Text: S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.0_00 Seiko Instruments Inc., 2011 The S-1333 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current


    Original     		PDF S-1333 S-1333A10-A4T1U3 S-1333A28-M5T1U3

    S-1312C29-A4T2U3

    Abstract: S-1312D33-A4T2U3
    Text: S-1312 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.2.2_00 Seiko Instruments Inc., 2011-2013 The S-1312 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current


    Original     		PDF S-1312 S-1312C29-A4T2U3 S-1312D33-A4T2U3

    S-1312D33-M5T1U3

    Abstract: No abstract text available
    Text: S-1312 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.2.0_00 Seiko Instruments Inc., 2011-2012 The S-1312 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current


    Original     		PDF S-1312 S-1312D33-M5T1U3

    transistor 1313

    Abstract: S-1313D30-A4T1U3
    Text: S-1313 Series www.sii-ic.com SUPER LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.1_00 Seiko Instruments Inc., 2011 S-1313 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has the super low current


    Original     		PDF S-1313 transistor 1313 S-1313D30-A4T1U3

    S-1313D10-M5T1U3

    Abstract: S-1313A33-N4T1U3 S-1313A15 S-1313C33-M5T1U3 S-1313B28 S-1313A33-M5T1U3 1313A2 S-1313A12-M5T1U3 S-1313B33-M5T1U3 S-1313D31-A4T1U3
    Text: S-1313 Series www.sii-ic.com SUPER LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.2_00 Seiko Instruments Inc., 2011 The S-1313 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has the super low current consumption and the low dropout voltage.


    Original     		PDF S-1313 S-1313D10-M5T1U3 S-1313A33-N4T1U3 S-1313A15 S-1313C33-M5T1U3 S-1313B28 S-1313A33-M5T1U3 1313A2 S-1313A12-M5T1U3 S-1313B33-M5T1U3 S-1313D31-A4T1U3

    S1313

    Abstract: S-1313D31-A4T1U3 S-1313B33-M5T1U3 GRM31CR72E104K S-1313A25-A4T1U3 S-1313B28 S-1313 SC-82AB S-1313B12-M5T1U3 S-1313A28-M5T1U3
    Text: S-1313 Series www.sii-ic.com SUPER LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.0_00 Seiko Instruments Inc., 2011 S-1313 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has the super low current


    Original     		PDF S-1313 S1313 S-1313D31-A4T1U3 S-1313B33-M5T1U3 GRM31CR72E104K S-1313A25-A4T1U3 S-1313B28 SC-82AB S-1313B12-M5T1U3 S-1313A28-M5T1U3

    Untitled

    Abstract: No abstract text available
    Text: S-1333 Series www.sii-ic.com LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.2.2_00 Seiko Instruments Inc., 2011-2013 The S-1333 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has low current


    Original     		PDF S-1333

    S1313

    Abstract: S-1313A18-N4T1U3
    Text: S-1313 Series www.sii-ic.com SUPER LOW CURRENT CONSUMPTION LOW DROPOUT CMOS VOLTAGE REGULATOR Rev.1.4_00 Seiko Instruments Inc., 2011-2013 The S-1313 Series, developed by using the CMOS technology, is a positive voltage regulator IC which has the super low


    Original     		PDF S-1313 S1313 S-1313A18-N4T1U3

    transistor L44

    Abstract: L44 TRANSISTOR MA4T645
    Text: Preliminary Specification M an A M P com pany High Reliability Semiconductor Silicon Bipolar Low Noise Transistor Features • • • • ML4T645-S-512 ODS 512 Outline fT to 9 GHz Low Noise Figure Silicon Dioxide and Silicon Dioxide Passivation Space Qualified


    OCR Scan     		PDF ML4T645-S-512 ML4T645 transistor L44 L44 TRANSISTOR MA4T645

    1T4 tube

    Abstract: BULD26 GCB3720 AA411
    Text: SCS-THOMSON M œ m iC T M O e S B U LD 26 MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA . . . . SGS-THOMSON PREFERRED SALESTYPE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION


    OCR Scan     		PDF BULD26 O-251 0068771-E 1T4 tube GCB3720 AA411

    IGBT 1MBH60-100

    Abstract: J9100
    Text: 1MBH60-100 ^ ± IG B T IGBT INSULATED GATE BIPOLAR TRANSISTOR • : Outline Drawings bkü : Features •H i â X ' • i& ü ü in liS • Hi gh Speed Switching Low Saturation Voltage Hfti/tCMOS-ir— MUie • :y High Impedance Gate Small Package 0. 6 * ■ ffliÊ : Applications


    OCR Scan     		PDF 1MBH60-100 l95t/RB9 IGBT 1MBH60-100 J9100

    Untitled

    Abstract: No abstract text available
    Text: VMÂCQM Preliminary Specifications m an AM P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V1.A SOT-23 Features • • • • • 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel


    OCR Scan     		PDF MA4T6310 OT-23

    transistor A4t 45

    Abstract: transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15
    Text: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • E n h a n ce m e n t m ode Type Vbs <D f f DS on Package Ordering Code BU Z 50 A 1000 V 2.5 A 5 a T O -2 2 0 A B C 6 7 0 7 8-A 1 3 0 7 -A 3 Maximum Ratings Symbol Parameter Drain so u rce v o lta g e


    OCR Scan     		PDF O-220 C67078-A1307-A3 023Sfc 0535bOS transistor A4t 45 transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15

    transistor kc 2026

    Abstract: LDL8 sms ic 1SV50 kc 2026 mboc 2N916 N429
    Text: M I L -S -1 9 5 0 0 /2 7 U NAVI 14 F eb ru a ry 1964 «SUPERSEDING K E L -S -19 5 0 0 /2 7 1 (NAVI) 21 O c to b e r 1 9 6 3 (S e e 6 . 2 ) MILITARY SPECIFICATO« SEMICONDUCTOR DEVICE, TRANSISTOR TYPE SN916 I. SCOPE 1.1 'This Specification eo*«rrs the.detall regni renw tr-for-an N PN etlleon tm s ls to r and lsln -accorfeace


    OCR Scan     		PDF MIL-S-19500/27U KEL-S-19500/271 2N916 MIL-S-19500, transistor kc 2026 LDL8 sms ic 1SV50 kc 2026 mboc 2N916 N429

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


    OCR Scan     		PDF

    nd 16 TRANSISTOR SOT-23

    Abstract: TRANSISTOR b 772 p sot-23 rks MA4T645 transistor TE 901 equivalent SOT-143 717 mount chip transistor 332 RKS SOT23 MA4T64500 MA4T64539
    Text: MA4T645 Series M/A-COM Silicon Bipolar High fT Low Noise Microwave Transistors M crow ave Products Case Style Features • • • • • • • A MI RÂF & C G M fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available


    OCR Scan     		PDF MA4T645 OT-23 OT-143 MA41344) nd 16 TRANSISTOR SOT-23 TRANSISTOR b 772 p sot-23 rks transistor TE 901 equivalent SOT-143 717 mount chip transistor 332 RKS SOT23 MA4T64500 MA4T64539

    Untitled

    Abstract: No abstract text available
    Text: I l O MULTI-POWER SUPPLY M R S5V E 0X X X SERIES •OUTLINE The RS5VE0X X X series are multi-power supply ICs with high accuracy output voltage and detector thresh­ old and with ultra low supply current by CMOS process. Each of these ICs consists of four voltage regulators,two


    OCR Scan     		PDF 77H4bTG G0D26G7 000280S

    transistor A4t

    Abstract: transistor A4t 45 transistor A4t 35 transistor A4t 16
    Text: ï éoJm RAfITRON CORP 33E D 755SD15 aGOQG71 □ FMx 1208FRAM Memory r ^ M 4,096-Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* T R ü N v Features • 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b ■ CMOS Technology with Integrated Ferroelectric


    OCR Scan     		PDF 755SD15 aGOQG71 1208FRAM® 096-Bit -250ns 500ns -44mW 124-Pin 7S5S015 transistor A4t transistor A4t 45 transistor A4t 35 transistor A4t 16