TRANSISTOR A4G Search Results

A4Y SOT23

Abstract: transistor a4y
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  * * * *  FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION

A4Y SOT23

Abstract: transistor a4y transistor a4g sot113 NF 723
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * „ FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO= -50V * Collector current up to 150mA * High hFE linearity * Complement to MMBT1815 ORDERING INFORMATION 

MARKING A4 transistor

Abstract: A4Y SOT23 sot-23 marking 113 sot323 transistor marking MMBT1015G UTC MMBT1015 MMBT1015 MMBT1815 free transistor transistor a4y
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR „ * * * * FEATURES Collector-Emitter Voltage: BVCEO=-50V Collector current up to 150mA High hFE linearity Complement to MMBT1815 Lead-free: MMBT1015L Halogen-free: MMBT1015G

A4Y MARK SOT-23

Abstract: MARK A4B A4Y SOT23 HMBT1015 transistor a4y
Contextual Info: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

transistor a4y

Abstract: A4Y SOT23 HMBT1015
Contextual Info: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

Contextual Info: MMBT1015W PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 Description A The MMBT1015W is designed for use in driver stage of AF amplifier and general purpose amplification. L 3 1 Top View V B S 2 G COLLECTOR

transistor a4y

Abstract: transistor a4g FMBT1015
Contextual Info: PNP Epitaxial Planar Transistor Data Sheet Mechanical Dimensions FMBT1015 Description .110 .060 3 3 .037 2 2 .115 .037 .016 2 3 1 1 1 .043 .016 .004 Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Collector - Base Voltage VCBO -50 V Emitter - Base Voltage

Contextual Info: HM-8808-8 HM-8808A-8 HARRIS 8K x 8 Asynchronous CMOS Static RAM Module June 1989 P in o u ts Features • • • • • • • • • • • • • • TOP VIEW Full CMOS Design 6 Transistor Memory Cell Low Standby Current. 250/900 jA

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

transistor af 126

Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3

JESD22-A-103A

Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3

IPC-9701

Abstract: JESD22-A-101
Contextual Info: PRELIMINARY V•I Chip Voltage Transformation Module BCM V•I Chip – BCM Bus Converter Module TM B048K120T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • 96% efficiency • 300 Watt 450 Watt for 1 ms

BCM reflow

Abstract: smd transistor marking SG smd transistor v2 IPC-9701
Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T10 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 8.3 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 100 Watt 150 Watt for 1 ms • 125°C operation • High density – up to 400 W/in3

A3G3

Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K030T21 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 3 V V•I Chip Converter • 94% efficiency • 210 Watt 315 Watt for 1 ms

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF

IPC-9701

Abstract: F17a
Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K160T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 16 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms

SMD capacitor 106c

Abstract: capacitor SMD 106C JESD22-A-101
Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K096T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 9.6 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3

V2 smd transistor

Abstract: B048K060T24 JESD22-A-103A JESD22-A-104B JESD22-A113-B SMD TRANSISTOR MARKING 2.x
Contextual Info: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K060T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 6 V V•I Chip Converter • Typical efficiency 95% • 240 Watt 360 Watt for 1 ms

Contextual Info: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF