TRANSISTOR A1 HB Search Results

Contextual Info: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ・With Built-in Bias Resistors. C ・Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1

KRA551F

Abstract: KRA552F resistor 554f KRA553F KRA554F
Contextual Info: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.

Contextual Info: SEMICONDUCTOR KRA551F~KRA554F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. C Simplify Circuit Design. C A DIM A A1 B B1 C D H T A1 Reduce a Quantity of Parts and Manufacturing Process.

KTC814U

Contextual Info: SEMICONDUCTOR KTC814U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES B B1 High Emitter-Base Voltage : VEBO=25V Min. High Reverse hFE A 6 2 5 3 4 C A1 Low on Resistance : RON=1 (Typ.), (IB=5mA) D MILLIMETERS _ 0.20

Contextual Info: SEMICONDUCTOR KTC814U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR MUTING AND SWITCHING APPLICATION. FEATURES B B1 High Emitter-Base Voltage : VEBO=25V Min. High Reverse hFE A 6 2 5 3 4 C A1 Low on Resistance : RON=1 (Typ.), (IB=5mA) D MILLIMETERS _ 0.20

SMD transistor A1

Abstract: IC 2003 E001 G003 CHIP COIL siemens matsua smd transistor A1 4 PIN
Contextual Info: iC-WD SWITCH-MODE DUAL 5 V REGULATOR Rev A1, Page 1/12 FEATURES Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë Ë APPLICATIONS Input voltage 8 to 36 Vdc Highly efficient step-down regulator Switching transistor and free-wheeling diode integrated Adjustment of the regulator cut-off current with external

9V-12V DC INPUT

Abstract: IC marking code D3 CQ212 MMBD4448DW case 202 transistor pinouts MMBT2907A MMBTA06 mbta06
Contextual Info: HBDM60V600W NEW PROD PR OD UCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data

9V-12V DC INPUT

Abstract: sot-363 u4 IC marking code D3 MARKING R6 SOT-363 MMBT2907A MMBTA06 hbdm60v600 U5A1 mmbd4448 MARKING HB01
Contextual Info: HBDM60V600W Lead-free Green NEW PRODUCT COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features • · · Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) 6 5 4 Mechanical Data

Contextual Info: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Sub-Component P/N

case 202 transistor pinouts

Abstract: hbdm60v600 TRANSISTOR ARRAY q2n* npn transistor L 450 diod TRANSISTOR ARRAY HBDM60V600W COMPLEX J-STD-020D MMBT2907A MMBTA06 mbta06
Contextual Info: HBDM60V600W COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER Please click here to visit our online spice models database. Features Mechanical Data • • • • • Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant Note 1

J119 transistor

Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR
Contextual Info: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be

Contextual Info: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can

QM50DY-H

Abstract: transistor B A O 331
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-HB . • Ic Collector c u rre n t. BOA • V cex C ollector-em itter v o lta g e 600V • hre DC current g a in . 750

GSA606-12

Abstract: GSA606 InGaP HBT Gain Block MARKING HBT DC9000 ATC520L103KT16T
Contextual Info: GSA606-12 InGaP HBT Gain Block Product Features Product Description ● DC to 7GHz Package The GSA606-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 6GHz frequency range with 15dB nominal gain at 2GHz. ● +15.7dBm P-1dB at 2GHz

Amplifier SOT-89 c4

Contextual Info: GSA503-89 InGaP HBT Gain Block Product Features Product Description ● DC to 3.5GHz Package The GSA503-89 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 3GHz frequency range with 20 dB nominal gain at 2GHz. ● +16 dBm P-1dB at 2GHz

ATC520L103KT16T

Abstract: MARKING HBT GSA612-12
Contextual Info: GSA612-12 InGaP HBT Gain Block Product Features ● DC to 12GHz ● +12 dBm P-1dB at 2GHz ● +27 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 5.5 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die

GSA804-12

Abstract: s parameters 4ghz 4ghz s parameters transistor 4ghz transistor n ATC520L103KT16
Contextual Info: GSA804-12 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● 0805 Lead–Free/green package ● Available as bare die

GSA603-12

Abstract: GSA-603-12 gsa603
Contextual Info: GSA603-12 InGaP HBT Gain Block Product Features ● DC to 3.5GHz ● +16 dBm P-1dB at 2GHz ● +28 dBm OIP3 at 2GHz ● 18 dB Gain at 2GHz ● 3.8 dB Noise Figure ● Internally-Matched to 50 Ω ● Unique 0805 Lead–Free/green package ● Available as bare die

ATC520L103KT16T

Abstract: Amplifier SOT-89 c4 GSA804-89 s parameters 4ghz ATC520L103KT16
Contextual Info: GSA804-89 InGaP HBT Gain Block Product Features ● 0.01 to 4GHz ● +20 dBm P-1dB at 2GHz ● +40 dBm OIP3 at 2GHz ● 12 dB Gain at 2GHz ● 4.5 dB Noise Figure ● Internally-Matched to 50 Ω ● SOT-89 Lead–Free/green package ● Available as bare die

SGA8543Z-EVB2

Abstract: marking code 85Z SGA8543ZSQ gm 88 140C rfmd model marking code PHEMT marking code B Transistor code zl HEMT marking P
Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

Contextual Info: SGA8543Z SGA8543Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Product Description Features RFMD’s SGA8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50MHzto3.5GHz. The

Contextual Info: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

Contextual Info: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

FP6700

Abstract: led tail light pwm dimming capacitor 22uf 450v FP6700SO sop16 pwm sop16 automotive SOP-16EP power factor correction buck topology FP6700-1 flyback led driver with pwm dimming
Contextual Info: FP6700 fitipower integrated technology lnc. Universal High Brightness LED Driver Description The FP6700 is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs from voltage sources ranging from 8VDC up to 450VDC. The FP6700 controls an