TRANSISTOR A 437 Search Results

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

NEC JAPAN 237 521 02

Abstract: transistor zo 607 2SC5004
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

transistor zo 607

Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

marking code W1

Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

NEC IC D 553 C

Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

NEC 1357

Abstract: LA 8873 TRANSISTOR C 4460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

SN 4931

Abstract: 2sc 3476 2SC 1885 SN 4931 N
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/MIX. It is suitable for a high density surface mount assem bly since the

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

BUK483-60A

Abstract: YBs transistor
Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSaW 0D3D73T OSD « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor marking T2

Abstract: TRANSISTOR 436 SCHMITT-TRIGGER application BCV63 BCV64 BCV64B bcv64 SOT143 NPN PNP SOT-143 700 v power transistor
Contextual Info: • ^53^31 GGEMSSM HAPX N AMER PHILIPS/DISCRETE BCV64 BCV64B b7E D SILICON PLANAR TRANSISTOR Double P N-P transistor in a plastic SOT-143 envelope. Intended fo r Schmitt-trigger applications. N-P-N complement is the BCV63. QUICK REFERENCE DATA transistor Collector-emitter voltage open base

Contextual Info: bRE D N AUER PHILIPS/DISCRETE bbS3^31 0D3D73T OSD « A P X Philips Semiconductors Product Specification BUK483-60A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

Contextual Info: _ BSN205 BSN205A JV N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed primarily as a line current interrupter in telephone sets, it can also be applied in other applications

BSN205

Abstract: BSN205A
Contextual Info: BSN205 BSN205A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other applications

BFR65

Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431
Contextual Info: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.

BUK627-450B

Abstract: tic 120 TIC 220
Contextual Info: N A ME R PHILIPS/DISCRETE 2 SE D • bbS3T31 OQSObSS PowerMOS transistor Fast Recovery Diode FET b ■ BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery