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    TRANSISTOR A 2601 Search Results

    TRANSISTOR A 2601 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A 2601 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFR540

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a


    Original     		BFR540 BFR540 125006/03/pp16 MSB003 PDF

    BFG198

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


    Original     		BFG198 OT223 MSB002 OT223. CGY2020G SCA50 647021/1200/01/pp12 BFG198 PDF

    BUJ103AX

    Abstract: BP317 BU1706AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX PDF

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX PDF

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A PDF

    str 6707

    Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.


    Original     		M3D067 BF859 O-202 MBH794 O-202) SCA63 115002/00/03/pp8 str 6707 philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202 PDF

    transistor BUJ100

    Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
    Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V


    Original     		BUJ100 transistor BUJ100 cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor cfl circuit PDF

    philips ferroxcube 4c6

    Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
    Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER


    Original     		BLF245 NCO8602 SCA57 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703 PDF

    BC369-25

    Abstract: BP317 BC368 BC369 BC369-16 vietnam TRANSISTOR bc369
    Text: DISCRETE SEMICONDUCTORS DATA A SHEET book, halfpage M3D186 BC369 PNP medium power transistor Product specification Supersedes data of 1997 Feb 28 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistor BC369 FEATURES PINNING • High current max. 1 A


    Original     		M3D186 BC369 BC368. MAM285 SCA63 115002/00/03/pp8 BC369-25 BP317 BC368 BC369 BC369-16 vietnam TRANSISTOR bc369 PDF

    BRY56A

    Abstract: relay 4099 "Programmable Unijunction Transistor" BY206 BZY88 BZY88C8V2 programmable unijunction transistor unijunction application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BRY56A Programmable unijunction transistor Product specification 1999 May 31 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION BRY56A PINNING Planar PNPN trigger device in a


    Original     		M3D186 BRY56A MSB033 MGL167 115002/01/pp8 BRY56A relay 4099 "Programmable Unijunction Transistor" BY206 BZY88 BZY88C8V2 programmable unijunction transistor unijunction application note PDF

    PB4540

    Abstract: PB4540 transistor PBSS5540Z PBSS4540Z BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor PBSS4540Z PINNING FEATURES • High current max. 10 A


    Original     		M3D087 PBSS4540Z 115002/01/pp8 PB4540 PB4540 transistor PBSS5540Z PBSS4540Z BP317 PDF

    pb5540

    Abstract: pb554 PBSS5540Z BP317 PBSS4540Z
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5540Z PNP medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification PNP medium power transistor PBSS5540Z PINNING FEATURES • High current max. 10 A


    Original     		M3D087 PBSS5540Z 115002/01/pp8 pb5540 pb554 PBSS5540Z BP317 PBSS4540Z PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTA144EEF PNP resistor-equipped transistor 1999 A pr 20 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA144EEF FEATURES


    OCR Scan     		PDTA144EEF PDTA144EEF SC-89 OT49Q) SCA63 15002/00/01/pp8 PDF

    transistor DK qe smd

    Abstract: transistor L43 SMD smd transistor L43 MARKING SMD pnp TRANSISTOR ec smd transistor 2300 339 marking code SMD transistor marking code UL SMD Transistor smd transistor marking HA transistor dk qe
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTA114EEF PNP resistor-equipped transistor 1998 Nov 11 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES


    OCR Scan     		PDTA114EEF SC-89 OT490) PDTC11etherlands, SCA60 115104/00/01/pp8 transistor DK qe smd transistor L43 SMD smd transistor L43 MARKING SMD pnp TRANSISTOR ec smd transistor 2300 339 marking code SMD transistor marking code UL SMD Transistor smd transistor marking HA transistor dk qe PDF

    transistor L43 SMD

    Abstract: smd transistor L43 22 smd transistor l43 MARKING SMD pnp TRANSISTOR ec TRANSISTOR SMD MARKING CODE dk
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTA124XEF PNP resistor-equipped transistor 1998 Nov 16 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA124XEF FEATURES


    OCR Scan     		PDTA124XEF SC-89 OT490) SCA60 115104/00/01/pp8 transistor L43 SMD smd transistor L43 22 smd transistor l43 MARKING SMD pnp TRANSISTOR ec TRANSISTOR SMD MARKING CODE dk PDF

    transistor L43 SMD

    Abstract: smd transistor L43 339 marking code SMD transistor l43 transistor TRANSISTOR SMD MARKING CODE dk MARKING SMD pnp TRANSISTOR ec smd transistor L43 22
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTC114EEF NPN resistor-equipped transistor 1998 Nov 11 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC114EEF FEATURES


    OCR Scan     		PDTC114EEF PDTC114EEF SC-89 OT490) SCA60 115104/00/01/pp8 transistor L43 SMD smd transistor L43 339 marking code SMD transistor l43 transistor TRANSISTOR SMD MARKING CODE dk MARKING SMD pnp TRANSISTOR ec smd transistor L43 22 PDF

    2P transistor

    Abstract: l43 transistor
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET 2PC4617J NPN general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING


    OCR Scan     		2PC4617J 2PC4617J SC-89 SCA60 115104/00/01/pp8 2P transistor l43 transistor PDF

    Marking Code 32

    Abstract: l43 transistor transistor dk qe
    Text: DISCRETE SEMICONDUCTORS a ffi S H E E T PDTC124XEF NPN resistor-equipped transistor 1998 Nov 11 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC124XEF


    OCR Scan     		PDTC124XEF PDTC124XEF SCA60 115104/00/01/pp8 Marking Code 32 l43 transistor transistor dk qe PDF

    2P transistor

    Abstract: l43 transistor
    Text: DISCRETE SEMICONDUCTORS a ffi S H E E T 2PA1774J PNP general purpose transistor 1998 Nov 10 P relim inary specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J FEATURES


    OCR Scan     		2PA1774J 2PA1774J SC-89 SCA60 115104/00/01/pp8 2P transistor l43 transistor PDF

    SOT422A

    Abstract: BLS3135-65
    Text: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES


    OCR Scan     		BLS3135-65 OT422A SOT422A BLS3135-65 PDF

    BD230

    Abstract: transistor K 2333
    Text: DISCRETE SEMICONDUCTORS BD230 NPN power transistor 1999 Apr 21 Product specification Supersedes data of 1997 Mar 06 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD230 FEATURES PINNING • High current max. 1.5 A


    OCR Scan     		BD230 BD230 BD231. SCA63 5002/00/03/pp8 transistor K 2333 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTA114YT PNP resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114YT FEATURES • Built-in bias resistors R1 and R2


    OCR Scan     		PDTA114YT PDTA114Ynics SCA63 15002/00/01/pp8 PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS a ffi SHEET PDTC143XT NPN resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC143XT FEATURES • Built-in bias resistors R1 and R2


    OCR Scan     		PDTC143XT PDTC143XT SCA63 15002/00/01/pp8 PDF