TRANSISTOR A 1980 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

QM300HA-H

Abstract: qm500ha-h QM10HA-HB QM20HA-HB QM30HQ-24 QM100HC-M qm400ha-h QM20HA QM20HA-H QM600HA-24
Contextual Info: POWER MODULES • TRANSISTOR MODULES # T ra n s is to r m odules Sin g le arm Max, ratings Electrical characteristics Transistor section Type No, Veos (sus) fe fe (A) (A) Dtode section _ lc Pe m Transistor section hFE V oe (sat) ÍV) (/<sl Diode section)

UPB2060

Contextual Info: UPB2060 60W PEP, 1.8-2.0 GHz, 26V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB2060 is a high-power COMMON EMITTER bipolar transistor capable of providing 60 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

UPB1835

Abstract: TM35W
Contextual Info: UPB1835 35W PEP, 1.8-2.0 GHz, 25V, Class AB, Broadband RF Power NPN Bipolar Transistor The UPB1835 is a high-power COMMON EMITTER bipolar transistor capable of providing 35 Watts of Class AB RF PEP output power over the band 1.8-2.0 GHz. This transistor is specifically designed for

1920A20

Contextual Info: R.B.063099 1920A20 20 Watts, 25 Volts, Class A 10 dB Gain Personal 1930 – 1990 MHz GENERAL DESCRIPTION The 1920A20 is a COMMON EMITTER transistor capable of providing 20 watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

k 351 transistor

Abstract: MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR
Contextual Info: N AMER PH ILIPS/DISCRETE ObE D bbS3T31 0Q1S70M 1 X BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. A lso suitable as r.f. amplifier and oscillator in f.m. tuners.

Contextual Info: Philips Semiconductors Preliminary Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Diode and Transistor 1980

Abstract: TRANSISTOR a 1980 BUK451-100A BUK451-100B
Contextual Info: Philips Semiconductors Preliminary Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

jfet transistor

Abstract: lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode
Contextual Info: www.Lovoltech.com PWRLITE-LS201N N-Channel Power JFET Transistor for Notebook Battery Applications Features Applications Description The JFET transistor from Lovoltech is an ideal switch for battery operated products. The device presents a Low Rdson allowing for

Contextual Info: Philips Semiconductors Preliminary Specification PowerMOS transistor GEN ER AL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

jfet transistor

Abstract: lovoltech LD1006N LVTD1006N lovoltech no diode
Contextual Info: www.Lovoltech.com PWRLITE LD1006N High Performance N-Ch Vertical Power JFET Transistor Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that

Contextual Info: N AMER PHILIPS/DISCRETE OhE D bbS3T31 Q01S7SD T T'3i’ i r SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A ~ v CBO max.

Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

100B100JW500X

Abstract: AGR19125E AGR19125EF AGR19125EU JESD22-C101A 1961-25
Contextual Info: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Lovoltech

Abstract: LD103SG6
Contextual Info: www.Lovoltech.com PWRLITE LD103SG6 High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that

Contextual Info: II SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature plastic envelope, intended for applications in thick and thin-film circuits such as self-oscillating mixer in u.h.f. tuners in conjunction with bipolar transistors or with M O S fets.

lovoltech

Abstract: jfet transistor LVTB103N LVTS103 Diode and Transistor 1980
Contextual Info: www.Lovoltech.com PWRLITE LVTB103N High Performance N-Ch Vertical Power JFET Transistor “No Diode” Features Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules Description The Power JFET transistor from Lovoltech is a device that

LD1010D

Abstract: Lovoltech LD1010D equivalent vertical LD1010D LD103SG6 IR 2E02 ld1010d.rev
Contextual Info: www.Lovoltech.com PWRLITE LD1010D High Performance N-Ch Vertical Power JFET Transistor with Schottky Features Description Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules The Power JFET transistor from Lovoltech is a device that

qm300dy-h

Abstract: qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c
Contextual Info: Transistor modules Double arm ,center tap V cêx h *8 I j-r Type No. Pe Transistor section Ve *¥ e (sus) (V) (A) (A) (Wl p (A) 600 30 1.8 250 150 30 QMSOCY-H 600 50 3 310 150 QM75CY-H 600 75 4.5 350 150 QMtOOCY-H 600 100 6 620 150 100 QM150CY-H 600 150

ks621k30

Contextual Info: KS621K30 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1600 412 925-7272 Single Darlington Transistor Module 300 Amperes/1000 Volts O U T L I N E D R A W IN G Description: The Powerex Single Darlington Transistor Modules are high power

300 volt 16 ampere transistor

Abstract: powerex ks62
Contextual Info: POldEREX INC =JñD D • 7ET4hai 00G2E03 m N ER EX ^ 1 KS621A40 Powerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 f Tentative Fast Switching Single Darlington Transistor Module 400 Amperes/125 Volts Description t<jTUNtC*A*U6 Powerex Fast Switching Single Transistor

Contextual Info: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.

equivalent transistor PT 3500

Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for