TRANSISTOR 955 E Search Results

TRANSISTOR 955 E Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR 955 E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SA1955 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 955 GENERAL PURPOSE AM PLIFIER APPLICATIONS Unit in mm SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage : VCE (sat) d ) = - 15mV (TyP-) @ Iq = —10mA / Iß = -0.5m A	OCR Scan	2SA1955 400mA	PDF
TRANSISTOR 955 E Abstract: VPS05163 50/TRANSISTOR 955 E Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor For AF driver and output stages 4 High collector current High current gain Low collector-emitter saturation voltage 3 Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration VPS05163	Original	VPS05163 OT-223 Sep-30-1999 TRANSISTOR 955 E VPS05163 50/TRANSISTOR 955 E	PDF
TRANSISTOR 955 E Abstract: VPS05163 Text: BDP 951 . BDP 955 NPN Silicon AF Power Transistor • For AF driver and output stages 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary types: BDP 952 . BDP 956 PNP 2 1 Pin Configuration	Original	VPS05163 OT-223 Sep-30-1999 TRANSISTOR 955 E VPS05163	PDF
50/TRANSISTOR 955 E Abstract: TCA955 TRANSISTOR 955 E Text: 47E » • ñE35bOS DÜ3S2bl ô « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Speed Controller TCA 955 Bipolar 1C Features • • High control accuracy Large supply voltage range Typical Applications Speed control in • • • • • Tape recorders Cassette recorders	OCR Scan	E35bOS 7000-A P-DIP-16 Q03S2LS TCA955 T-52-13-25 50/TRANSISTOR 955 E TCA955 TRANSISTOR 955 E	PDF
DCA50 Abstract: DCA50e germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E Text: DCA50e component analyser enhanced user guide introduction - automatically. As identification, the measures transistor gain The DCA50e Component Analyser is a highly advanced instrument that provides a wealth of functionality and features in one extremely easy	Original	DCA50e DCA50e DCA50 germanium transistors NPN 6F22 MN1604 SK17 the transistor equivalent TRANSISTOR 955 E	PDF
DCA50e Abstract: DCA50 germanium transistors NPN 6F22 MN1604 SK17 germanium transistoren Text: DCA50e Komponenten-Analysator erweitert Hergestellt in Großbritannien. Peak Electronic Design Ltd. Atlas House, Kiln Lane, Harpur Ind. Est, Buxton, SK17 9JL, U.K. Einleitung Der DCA50e KomponentenAnalysator ist ein zukunftsweisendes Instrument, das eine Vielzahl von	Original	DCA50e DCA50e DCA50 germanium transistors NPN 6F22 MN1604 SK17 germanium transistoren	PDF
transistor 9527 Abstract: T 9527 st 9535 9542 mitsubishi data sheet transistor 9527 Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L9595M RoHS Compliance , 952-954MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L9595M is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the	Original	RA01L9595M 952-954MHz RA01L9595M transistor 9527 T 9527 st 9535 9542 mitsubishi data sheet transistor 9527	PDF
transistor 131-6 Abstract: 4139 temperature TRANSISTOR K 314 p945 Text: /'2#5HJXODWRUV#ZLWK#D#:DWFKGRJ 7LPHU 584359#6 5,(6 $33/,&$7,21#0$18$/ NO. EA-072-0006 LDO Regulators with a Watchdog Timer 584359#6(5,(6 OUTLINE ,# ,&V# ZLWK# KLJK# DFFXUDF\# RXWSXW#YROWDJH	Original	EA-072-0006 transistor 131-6 4139 temperature TRANSISTOR K 314 p945	PDF
transistor 4120 Abstract: AZ100LVEL58T LV58 MC100LVEL58 AZ100LVEL58D AZ100LVEL58 Text: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors	Original	AZ100LVEL58 440ps MC100LVEL58 AZ100LVEL58D AZ100LVEL58T AZM100 LVEL58 AZ100LVEL58N+ AZ100LVEL58NG transistor 4120 AZ100LVEL58T LV58 MC100LVEL58 AZ100LVEL58D AZ100LVEL58	PDF
BTP955L3 Abstract: No abstract text available Text: Spec. No. : C606L3 Issued Date : 2005.02.04 Revised Date : 2005.03.04 Page No. : 1/6 CYStech Electronics Corp. PNP Epitaxial Planar High Current High Performance Transistor BTP955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage	Original	C606L3 BTP955L3 OT-223 UL94V-0 BTP955L3	PDF
500 watts amplifier schematic diagram pcb layout Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a	Original	AN1670/D AN1670 500 watts amplifier schematic diagram pcb layout 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor	PDF
microtek Abstract: AZ100LVEL58 AZ100LVEL58D AZ100LVEL58T LV58 MC100LVEL58 LVEL58 362-0 transistor Text: ARIZONA MICROTEK, INC. AZ100LVEL58 ECL/PECL 2:1 Multiplexer PACKAGE AVAILABILITY FEATURES • • • • • • • Green / RoHS Compliant / Lead Pb Free Packages Available 440ps Propagation Delay Operating Range of 3.0V to 5.5V Internal Input Pulldown Resistors	Original	AZ100LVEL58 440ps MC100LVEL58 AZ100LVEL58D AZ100LVEL58T AZM100 LVEL58 AZ100LVEL58N+ AZ100LVEL58NG microtek AZ100LVEL58 AZ100LVEL58D AZ100LVEL58T LV58 MC100LVEL58 LVEL58 362-0 transistor	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20219 70 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and	OCR Scan	G-200,	PDF
lc 945 p transistor NPN TO 92 Abstract: lc 945 p transistor NPN lc 945 transistor lc 945 p transistor Text: ERICSSON ^ PTB 20148 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20148 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications.	OCR Scan		PDF

Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20193 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor D escription The 20193 is a class AB, NPN com m on em itter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minim um output power and may be used for both CW and PEP	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20135 85 Watts, 925-960 MHz Cellular Radio RF Power Transistor D escription The 20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
transistor BC 945 Abstract: RA20H8994M 1000v 200w Transistor RA20H8994M-101 Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA20H8994M RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to	Original	RA20H8994M 896-941MHz RA20H8994M 20-watt 941-MHz transistor BC 945 1000v 200w Transistor RA20H8994M-101	PDF
KV58 Abstract: No abstract text available Text: MC100LVEL58 3.3V ECL 2:1 Multiplexer The MC100LVEL58 is a 2:1 multiplexer. The device is pin and functionally equivalent to the EL58 and works from a 3.3 V supply. With AC performance similar to the EL58 device, the LVEL58 is ideal for low voltage applications which require the ultimate in AC	Original	MC100LVEL58 LVEL58 KVL58 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 KV58	PDF
Untitled Abstract: No abstract text available Text: MC100LVEL59 3.3V ECL Triple 2:1 Multiplexer The MC100LVEL59 is a 3.3 V triple 2:1 multiplexer with differential outputs. The output data of the multiplexers can be controlled individually via the select inputs or as a group via the common select input. The flexible selection scheme makes the device	Original	MC100LVEL59 100LVEL59 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1560	PDF
transistor BD 2420 Abstract: MARKING QB Text: MC100LVEL12 3.3V ECL Low Impedance Driver The MC100LVEL12 is a low impedance drive buffer. With two pairs of OR/NOR outputs the device is ideally suited for high drive applications such as memory addressing. The device is functionally equivalent to the EL12 device and operates from a 3.3 V power supply.	Original	MC100LVEL12 LVEL12 KVL12 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 transistor BD 2420 MARKING QB	PDF
Untitled Abstract: No abstract text available Text: MC100EL59 5V ECL Triple 2:1 Multiplexer The MC100EL59 is a triple 2:1 multiplexer with differential outputs. The output data of the multiplexers can be controlled individually via the select inputs or as a group via the common select input. The flexible selection scheme makes the device useful for both data path and random	Original	MC100EL59 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504 AN1560 AN1568	PDF
KVL01 Abstract: No abstract text available Text: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in	Original	MC100LVEL01 LVEL01 KVL01 AND8020 AN1404 AN1405 AN1406 AN1503 AN1504	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor D e s c rip tio n The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
transistor ft 960 Abstract: IC 7108 Text: ERICSSO N 0 PTB 20177 150 Watts, 925-960 MHz Cellular Radio RF Power Transistor Description The 20177 is a class AB, NPN. com mon em itter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF

TRANSISTOR 955 E Search Results

TRANSISTOR 955 E Result Highlights (5)

TRANSISTOR 955 E Datasheets Context Search

Untitled

TRANSISTOR 955 E

TRANSISTOR 955 E

50/TRANSISTOR 955 E

DCA50

DCA50e

transistor 9527

transistor 131-6

transistor 4120

BTP955L3

500 watts amplifier schematic diagram pcb layout

microtek

Untitled

lc 945 p transistor NPN TO 92

Untitled

Untitled

transistor BC 945

KV58

Untitled

transistor BD 2420

Untitled

KVL01

Untitled

transistor ft 960