TRANSISTOR 955 Search Results

NEC 2403

Abstract: 3181 R33 2SC4227 2SC4227-T1 2SC4227-T2 of transistor C 4908 TC-2403 0 811 404 614
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

A 564 transistor

Abstract: 3181 R33 transistor A 564
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.

transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

BLX93A

Contextual Info: PHILIR-S INTERNATIONAL MIE D 7110flEb GGSTÖM? 3 BIPHIN BLX93A MAINTENANCE TYPE ' -r- 3 3 - 0 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a supply voltage up to 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

BLX93A

Abstract: high power npn UHF transistor BLX93 T-33-07 TRANSISTOR D 471 IEC134 47pH
Contextual Info: PH IL IR-S INTERNATIONAL MIE D Q 71LOä2b GG27àM7 3 B PHIN BLX93A MA IN TE N AN CE TYPE ^ - T -3 3 -Û 7 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

BUK7508-55

Abstract: capacitor .75j
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

Contextual Info: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

Contextual Info: BLF8G10LS-160V Power LDMOS transistor Rev. 2 — 24 October 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.

1961 30 TRANSISTOR

Contextual Info: BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance

RO3006

Abstract: BLF7G10L
Contextual Info: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 3 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance

BLF7G10L-250

Abstract: BLF7G10
Contextual Info: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 1 — 25 February 2011 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance

Contextual Info: BLF8G10L-160; BLF8G10LS-160 Power LDMOS transistor Rev. 3 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance

D2375

Abstract: BLF6G10S-45 RF35
Contextual Info: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

transistor J333

Abstract: J333 J333 transistor
Contextual Info: BLF7G10L-250; BLF7G10LS-250 Power LDMOS transistor Rev. 2 — 11 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz. Table 1. Typical performance

Contextual Info: BLF8G10LS-160V Power LDMOS transistor Rev. 1 — 13 July 2012 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz. Table 1.