TRANSISTOR 914 Search Results

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

TRANSISTOR 2SC 2581

Abstract: 2sc 1919 NEC NF 932 2sc 1915 TRANSISTOR 2SC 733
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low PACKAGE DIMENSIONS

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

TRANSISTOR LD25

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope

2n 914

Abstract: transistor 914 NPN transistor SST 117 2N914 914 transistor
Contextual Info: *2N 914 NPN SILICON TRANSISTOR, EPITAXIAL TRANSISTOR NPN SILIC IU M , E P ITAXIAL Preferred device D isp o sitif recommandé • Low current fast switching Commutation rapide faible courant Maximum power dissipation V CEO 15 V h ji^ d O mA 3 0 -1 2 0 fT 300 MHz min.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK581-100A Logic tevel FET _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

Contextual Info: Ordering number:ENN3259 2SB1230 : PNP Epitaxial Planar Silicon Transistor 2SD1840 : NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters and other

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

BFV421

Abstract: BFV420 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFV421 PNP high voltage transistor Product specification File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Preliminary specification PNP high voltage transistor BFV421 PINNING

2SB1230

Abstract: 2SD1840
Contextual Info: Ordering number:EN3259 2SB1230 : PNP Epitaxial Planar Silicon Transistor 2SD1840 : NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters and other

vhf linear amplifier

Abstract: vhf linear pulse power amplifier BLV33F MGG130
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV33F VHF linear power transistor Product specification 1996 Oct 10 Philips Semiconductors Product specification VHF linear power transistor BLV33F PINNING - SOT119A FEATURES • Internally matched input for wideband operation and

BLX93A

Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
Contextual Info: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bbS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance

BLV2044

Abstract: chip die npn transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV2044 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 14 Philips Semiconductors Product specification UHF power transistor BLV2044 FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature

BUK464-200A

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

BLV2045

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV2045 UHF power transistor Product specification Supersedes data of 1996 Feb 09 1996 Nov 13 Philips Semiconductors Product specification UHF power transistor BLV2045 FEATURES PINNING - SOT390A • Emitter ballasting resistors for optimum temperature

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance