TRANSISTOR 902 Search Results
TRANSISTOR 902 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
|
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
|
||
| TTC5886A |
|
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
|
||
| TTA2097 |
|
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
|
||
| TPCP8515 |
|
NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
|
||
| TTC021 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
|
TRANSISTOR 902 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
|
OCR Scan |
AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 | |
transistor Common Base configuration
Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book
|
Original |
IB0810M12 IB0810M50. IB0810M12-SF-REV-NC transistor Common Base configuration IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book | |
BFR540
Abstract: MSB003 BFR540 philips
|
Original |
BFR540 BFR540 MSB003 BFR540 philips | |
BFR540
Abstract: MSB003
|
Original |
BFR540 BFR540 125006/03/pp16 MSB003 | |
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
|
OCR Scan |
||
PR37 RESISTOR
Abstract: PR37 resistors
|
OCR Scan |
BLW96 PR37 RESISTOR PR37 resistors | |
D 400 F 6 F BIPOLAR TRANSISTORContextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope |
OCR Scan |
BUK866-400IZ 300us) D 400 F 6 F BIPOLAR TRANSISTOR | |
nec 2401 831
Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
|
Original |
2SC5010 2SC5010 nec 2401 831 nec 2401 2SC5010-T1 437 20000 marking 83 7749 transistor | |
BFC505
Abstract: MBG20 IC vco 900 1800 mhz MGG216
|
Original |
BFC505 OT353 BFC505 MBG20 IC vco 900 1800 mhz MGG216 | |
BFC520Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFC520 NPN wideband cascode transistor Product specification Supersedes data of 1996 Oct 08 File under Discrete Semiconductors, SC14 1997 Sep 10 Philips Semiconductors Product specification NPN wideband cascode transistor |
Original |
BFC520 OT353 SCA55 127127/00/03/pp12 BFC520 | |
MRC026
Abstract: MRC027 MRC024 MRC029 MRC025 MRC028 BFS520 N2 SC70 MRC021
|
Original |
BFS520 OT323 MBC870 OT323 MRC026 MRC027 MRC024 MRC029 MRC025 MRC028 BFS520 N2 SC70 MRC021 | |
|
Contextual Info: DISCRETE SEMICONDUCTORS DAT BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns |
Original |
BFS505 OT323 MBC870 OT323. OT323 R77/03/pp14 | |
transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
|
OCR Scan |
2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568 | |
MRC027
Abstract: MRC021 MRC025 BFR520T SC75 MRC028 MAM337
|
Original |
M3D173 BFR520T OT416 budgetnum/ed/pp12 MRC027 MRC021 MRC025 BFR520T SC75 MRC028 MAM337 | |
|
|
|||
BFR520
Abstract: MSB003
|
Original |
BFR520 BFR520 MSB003 | |
|
Contextual Info: N AflER PHILIPS/DISCRETE 86D 01812 ObE D b b s a ' m oam osa a • BLX92A D r-3 3 - 4 5 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V, The transistor is resistance stabilized and is guaranteed to withstand severe |
OCR Scan |
BLX92A QQ14D5 | |
MRC016
Abstract: MRC013 MRC020 MRC012 MRC017 BFS505 Ghz dB transistor
|
Original |
BFS505 OT323 MBC870 OT323 OT323. MRC016 MRC013 MRC020 MRC012 MRC017 BFS505 Ghz dB transistor | |
MRC002
Abstract: MRC005 MRC008 BFS540 MRC003 philips bfs540
|
Original |
BFS540 OT323 MBC870 OT323 OT323. MRC002 MRC005 MRC008 BFS540 MRC003 philips bfs540 | |
bfr505
Abstract: MSB003 mra723 transistor ZO 103 MA
|
Original |
BFR505 BFR505 MSB003 mra723 transistor ZO 103 MA | |
MSB003
Abstract: BFR540
|
Original |
M3D088 BFR540 613516/04/pp16 MSB003 BFR540 | |
BFG541 application sheet
Abstract: bfg541 V 904 RL 805
|
Original |
BFG541 BFG541 application sheet bfg541 V 904 RL 805 | |
MRC005
Abstract: MRC008 BFS540 MRC006
|
Original |
M3D102 BFS540 OT323 MBC870 R77/04/pp13 MRC005 MRC008 BFS540 MRC006 | |
MRC016Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFS505 NPN 9 GHz wideband transistor Product specification September 1995 NXP Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFS505 PINNING • Low current consumption PIN DESCRIPTION 3 handbook, 2 columns |
Original |
BFS505 OT323 R77/03/pp14 771-BFS505-T/R MRC016 | |
BFS505
Abstract: MRC013 a 103 m Transistor
|
Original |
BFS505 OT323 MBC870 OT323. OT323 R77/03/pp14 BFS505 MRC013 a 103 m Transistor | |