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    TRANSISTOR 8722 Search Results

    TRANSISTOR 8722 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8722 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    phd45n03

    Abstract: PHP45N03LT PHD45N03L 74 series PHILIPS PHB45N03LT PHD45N03LT PHP45 php45n03
    Text: PHP45N03LT; PHB45N03LT; PHD45N03LT N-channel TrenchMOS transistor Rev. 06 — 05 October 2000 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP45N03LT; PHB45N03LT; PHD45N03LT PHP45N03LT O-220AB) PHB45N03LT OT404 PHD45N03LT OT428 OT404, phd45n03 PHD45N03L 74 series PHILIPS PHP45 php45n03 PDF

    PHP83N03LT

    Abstract: PHB83N03LT PHE83N03LT TO-220AB transistor package
    Text: PHP83N03LT; PHB83N03LT; PHE83N03LT N-channel TrenchMOS transistor Rev. 01 — 23 January 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP83N03LT; PHB83N03LT; PHE83N03LT PHP83N03LT O-220AB) PHB83N03LT OT404 PHE83N03LT OT226 OT404, TO-220AB transistor package PDF

    transistor BR 471 A

    Abstract: 74 series PHILIPS PHP95N03LT PHB95N03LT PHE95N03LT
    Text: PHP95N03LT; PHB95N03LT; PHE95N03LT N-channel TrenchMOS transistor Rev. 01 — 02 February 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP95N03LT; PHB95N03LT; PHE95N03LT PHP95N03LT O-220AB) PHB95N03LT OT404 PHE95N03LT OT226 OT404, transistor BR 471 A 74 series PHILIPS PDF

    BSH108

    Abstract: 03ab10 MSB003 transistor 8722
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH108 M3D088 BSH108 03ab10 MSB003 transistor 8722 PDF

    PHT4NQ10LT

    Abstract: SC-73
    Text: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHT4NQ10LT M3D087 PHT4NQ10LT OT223. OT223, SC-73 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH108 M3D088 BSH108 MSB003 MBB076 PDF

    07342

    Abstract: No abstract text available
    Text: PHT4NQ10LT N-channel enhancement mode field-effect transistor Rev. 01 — 11 September 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHT4NQ10LT M3D087 PHT4NQ10LT OT223. OT223, 07342 PDF

    PHB100N03LT

    Abstract: 03AB29
    Text: PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 — 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHB100N03LT M3D166 PHB100N03LT OT404 OT404, 03AB29 PDF

    03ab10

    Abstract: No abstract text available
    Text: BSH108 N-channel enhancement mode field-effect transistor Rev. 02 — 25 October 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH108 M3D088 BSH108 03ab10 PDF

    BSH114

    Abstract: No abstract text available
    Text: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH114 M3D088 BSH114 MSB003 PDF

    BSH120T

    Abstract: 03ac49
    Text: BSH120T N-channel enhancement mode field-effect transistor Rev. 01 — 06 September 2000 Product specification M3D186 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH120T M3D186 BSH120T 03ab40 MBB076 03ac49 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSH114 N-channel enhancement mode field effect transistor Rev. 01 — 09 November 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		BSH114 M3D088 BSH114 MSB003. PDF

    smd diode 319

    Abstract: No abstract text available
    Text: PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHB160N03T M3D166 PHB160N03T OT404 MBK116 MBB076 smd diode 319 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHP54N06T N-channel enhancement mode field-effect transistor Rev. 01 — 14 February 2001 Product specification M3D307 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP54N06T M3D307 PHP54N06T O-220AB) MBB076 MBK106 PDF

    Royal Electronics

    Abstract: PHB160N03T
    Text: PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 — 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHB160N03T M3D166 PHB160N03T OT404 Royal Electronics PDF

    PHB30NQ15T

    Abstract: PHP30NQ15T 502mj
    Text: PHP30NQ15T; PHB30NQ15T N-channel enhancement mode field-effect transistor Rev. 02 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP30NQ15T; PHB30NQ15T PHP30NQ15T O-220AB) PHB30NQ15T OT404 OT404, 502mj PDF

    PHB73N06T

    Abstract: PHP73N06T
    Text: PHP73N06T; PHB73N06T N-channel enhancement mode field-effect transistor Rev. 01 — 12 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP73N06T; PHB73N06T PHP73N06T O-220AB) PHB73N06T OT404 OT404, PDF

    PHB47NQ10T

    Abstract: PHP47NQ10T
    Text: PHP47NQ10T; PHB47NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 16 May 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP47NQ10T; PHB47NQ10T PHP47NQ10T O-220AB) PHB47NQ10T OT404 OT404, PDF

    Untitled

    Abstract: No abstract text available
    Text: PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP112N06T; PHB112N06T PHP112N06T O-220AB) PHB112N06T OT404 OT404, PDF

    Untitled

    Abstract: No abstract text available
    Text: PHP55N03LTA; PHB55N03LTA N-channel enhancement mode field-effect transistor Rev. 01 — 30 March 2001 Product specification 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PHP55N03LTA; PHB55N03LTA PHP55N03LTA O-220AB) PHB55N03LTA OT404 OT404 PDF

    03ad10

    Abstract: PSMN008-75B PSMN008-75P
    Text: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PSMN008-75P; PSMN008-75B PSMN008-75P PSMN008-75B OT404 OT404, 03ad10 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.


    Original     		BSP110 BSP110 OT223. OT223, 03ab45 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH121 in SOT323.


    Original     		BSH121 BSH121 OT323. OT323, PDF

    Untitled

    Abstract: No abstract text available
    Text: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PSMN008-75P; PSMN008-75B PSMN008-75P PSMN008-75B OT404 OT404, MBK106 PDF