TRANSISTOR 86 PHILIPS Search Results

BUK445-600B

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a S O U 86 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

Philips transistor k1

Abstract: BUK445-600B
Contextual Info: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

lc 945 p transistor NPN TO 92

Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision
Contextual Info: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.

Contextual Info: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.

BLU51

Contextual Info: N AMER PHILIPS/DISCRETE OLE D 86 D 0 1 1 2 4 ^53^31 0Q133b2 □ D 7- - 3 3 - BLU 51 A V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed fo r use in m ilitary and professional wideband applications in the 30 to 400 MHz range.

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

PHB42N03T

Abstract: T404
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device

Philips 4312 020

Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Contextual Info: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network

BLV21

Abstract: RF POWER TRANSISTOR NPN vhf
Contextual Info: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran­

current fed push pull topology

Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
Contextual Info: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors

639 TRANSISTOR PNP

Abstract: BFQ34T TRANSISTOR P 3 BFQ54T philips MATV amplifiers GHz PNP transistor MEA336
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ54T PHILIPS INTERNATIONAL D E S C R IP T IO N P N P transistor in a plastic S O T 3 7 package. It is primarily intended for use in M A TV and m icrowave amplifiers such a s in aerial amplifiers, radar

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

transistor 835

Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
Contextual Info: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558

BUK7528-30

Abstract: PHP45N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

blv59

Abstract: sot171
Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bbS3T31 □ □ 2 C1 G 7 4 A GTb BLV59 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar e p ita xia l tran sisto r in SOT-171 envelope p rim a rily intended fo r use as linear a m p lifie r in u.h .f. television transm itters.

BUK7528-30

Abstract: PHP42N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

BUK7528-30

Abstract: PHB42N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device

BUK7528-30

Abstract: PHB45N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device

BLX91A

Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
Contextual Info: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: Philips Semiconductors Product specification NPN video transistor BFQ225 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. o DESCRIPTION NPN silicon transistor encapsulated in a 3-lead plastic SOT 128B package.

multi-emitter transistor

Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
Contextual Info: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.