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    TRANSISTOR 81 110 W 65 Search Results

    TRANSISTOR 81 110 W 65 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 81 110 W 65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor j39

    Abstract: J31 transistor
    Text: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


    Original     		PDF PH2729-11 5oos41V104KP4 ci7-11- 9-21s transistor j39 J31 transistor

    Triac/TRIAC TAG 92

    Abstract: TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90
    Text: SIMM Series Input Modules * 6.2 mm wide and 65 mm deep * DIN Rail mounted * LED input status indicator * Bridges enable quick linking of common voltage * Identification zone on front face * IP20 Part numbers 84145061 84145062 84145064 84145066 84145071 24Vac/dc


    Original     		PDF 24Vac/dc 2-30Vac/dc 95-121Vac/dc 195-253Vac/dc 30Vac/36Vdc Triac/TRIAC TAG 92 TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90

    Ex-92

    Abstract: vegaswing 83 vegator Burgess Ex VIB41 VIB51 VIB52X PTB Ex-92.C.2141 VIB52 0/PTB Ex-92.C.2141
    Text: Level and Pressure Product Information Vibrating level switches Contents Contents 1 Product description 1.1 1.2 2 Function and application 2.1 2.2 3 Vibrating level switches overview . 7


    Original     		PDF

    philips ferroxcube 4c6

    Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
    Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER


    Original     		PDF BLF245 NCO8602 SCA57 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703

    sot446

    Abstract: LWE2010S SC15 SOT446A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor


    Original     		PDF LWE2010S SCA53 127147/00/02/pp12 sot446 LWE2010S SC15 SOT446A

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    transistor SMD DK rc

    Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications


    Original     		PDF BLS2731-110 OT423A SCA57 125108/00/04/pp12 transistor SMD DK rc transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342

    IDG-500

    Abstract: BLF244 idg 500 NCO8701 NCO8702
    Text: APPLICATION NOTE Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 NCO8702 Philips Semiconductors Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 CONTENTS


    Original     		PDF BLF244 NCO8702 NCO8701 SCA57 IDG-500 BLF244 idg 500 NCO8702

    QE R 643

    Abstract: No abstract text available
    Text: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip


    OCR Scan     		PDF MA4T243 MA4T24300 MA4T24300 MA4T24335 QE R 643

    transistor c s z 44 v

    Abstract: OC36 transistor 27F272 PH2729-110M
    Text: M a n A M P ic o m p a n y Radar Pulsed Power Transistor, 110W, 100ns Pulse, 10% Duty 2.7-2.9 GHz PH2729-110M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d C lass C O p e ra tio n


    OCR Scan     		PDF 100ns PH2729-110M 500S41W104KP4 ATC100A 73030833-07BOARD 73030837-U transistor c s z 44 v OC36 transistor 27F272 PH2729-110M

    NE24318

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499 IS12I NE24318

    NE243187

    Abstract: NE243188
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499

    transistor K 1413

    Abstract: 5607 transistor E243287 chip die npn transistor NE243287
    Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The


    OCR Scan     		PDF NE243 NE24300 transistor K 1413 5607 transistor E243287 chip die npn transistor NE243287

    GP 836 DIODE

    Abstract: PH0810-4 ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765
    Text: VM &CO M m an A M P com pany Wireless Bipolar Power Transistor, 4W 850 - 960 MHz PH0810-4 Features • • • • • • • .725 _ 18.42 NPN Silicon Microwave Pow er T ran sistor D esigned for Linear Am plifier A pplications C lass AB: -30dBc Typ 3rd IMD at 4 Watts PEP


    OCR Scan     		PDF -30dBc PH0810-4 1N4245) PH0810-4 10T/NO. GP 836 DIODE ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765

    yig tuned oscillator

    Abstract: transistor 81 110 w 63 yto oscillator om02-06
    Text: an A M P com pany YIG Tuned Oscillators 2 - 20 GHz MLYO 0000 Series V3.00 Features • • • • • Multioctave Tuning Ranges Miniature and Cube Packages High Linearity High Stability Low Phase Noise Description The YIG Tuned Oscillator YTO is a type of tuned oscil­


    OCR Scan     		PDF

    transistor 81 110 w 63

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •


    OCR Scan     		PDF MRF581 transistor 81 110 w 63

    HP8542

    Abstract: HP11590B transistor nf5 F581
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz


    OCR Scan     		PDF F5812 MRF581 MRF5812 HP8542 HP11590B transistor nf5 F581

    AT-60535

    Abstract: No abstract text available
    Text: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz


    OCR Scan     		PDF 0QGbS13 AT-60535 AT-60535 310-371-8717or310-371-8478

    2272 t4

    Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF 44A-01 RF177 MRF177M MRF177 MRF177M MRF177 P/RM77 2272 t4 c17 dual mos 1N5347B equivalent MRF177 equivalent

    ST l 9143

    Abstract: l 9143
    Text: m an A M P com pany Radar Pulsed Power Transistor, 110W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-110M V2.00 Features • N P N S ilic o n M ic r o w a v e P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la s s C O p e r a tio n


    OCR Scan     		PDF 150ns PH1214-110M PH1214-110M ST l 9143 l 9143

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany TO-8 Packaged Voltage Controlled Oscillators 300 MHz - 1 0 GHz MLO 60000 Series V3.00 Features • • • • • PCB Compatible Low Cost Mil and Commercial Designs Broad Frequency Ranges Low Phase Noise Description M/A-COM’s range of TO-8 voltage controlled oscillators


    OCR Scan     		PDF