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    TRANSISTOR 800V 1A Search Results

    TRANSISTOR 800V 1A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 800V 1A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N5027

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION


    Original     		PDF N5027 O-220 O-220F N5027L N5027-x-TA3-T N5027L-x-TA3-T N5027-x-TF3-T N5027L-x-TF3-T N5027

    N5027

    Abstract: transistor 800V 1A
    Text: UNISONIC TECHNOLOGIES CO., LTD N5027 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY NPN TRANSISTOR 1 TO-220 FEATURES * High Voltage VCEO = 800V * High Speed Switching * Wide SOA 1 TO-220F *Pb-free plating product number: N5027L ORDERING INFORMATION


    Original     		PDF N5027 O-220 O-220F N5027L N5027-x-TA3-F-T N5027L-x-TA3-F-T N5027-x-TF3-F-T N5027L-x-TF3-F-T N5027 transistor 800V 1A

    NTE369

    Abstract: Transistor 800V
    Text: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA


    Original     		PDF NTE369 NTE369 200mA 200mA, 500mA, 100mA, Transistor 800V

    2SC4301

    Abstract: No abstract text available
    Text: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)


    Original     		PDF 2SC4301 FM100 100max 800min Pulse14) 105typ 2SC4301

    2SC4301

    Abstract: No abstract text available
    Text: 2SC4301 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 7(Pulse14)


    Original     		PDF 2SC4301 FM100 100max 800min Pulse14) 105typ 2SC4301

    TO220 HEATSINK DATASHEET

    Abstract: 2SC5239 ATV3 transistor 800V 1A
    Text: 2SC5239 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Ratings Unit ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 VEBO IC Symbol 10.2±0.2


    Original     		PDF 2SC5239 MT-25 100max 550min 300mA TO220 HEATSINK DATASHEET 2SC5239 ATV3 transistor 800V 1A

    222A Transistor

    Abstract: 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4530AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color


    Original     		PDF BU4530AW 100mA; 222A Transistor 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V

    bu2527ax

    Abstract: ISC transistor bu2527ax equivalent bu2527ax BB145 Equivalent bu2527ax datasheet
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of high


    Original     		PDF BU2527AX bu2527ax ISC transistor bu2527ax equivalent bu2527ax BB145 Equivalent bu2527ax datasheet

    2SC4517

    Abstract: 4517A transistor 800V 1A 2sc4517a
    Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2


    Original     		PDF 2SC4517/4517A 2SC4517 2SC4517A O220F) 100max 550min 35typ 4517A transistor 800V 1A

    transistor 800V 1A

    Abstract: transistor Ic 1A datasheet NPN 2SC4230
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4230 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·Fast Switching speed APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Switch mode power supplies


    Original     		PDF 2SC4230 transistor 800V 1A transistor Ic 1A datasheet NPN 2SC4230

    BU2522AX

    Abstract: BU2522 NPN Transistor 1500V transistor 800V 1A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2522AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of pc


    Original     		PDF BU2522AX 100mA; BU2522AX BU2522 NPN Transistor 1500V transistor 800V 1A

    transistor 800V 1A

    Abstract: 2sc3150
    Text: Ordering number:ENN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3150] 10.2


    Original     		PDF ENN1069C 2SC3150 00V/3A VCBO900V) 2010C 2SC3150] PW300 Cycle10% transistor 800V 1A 2sc3150

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3152] 15.6


    Original     		PDF ENN1071D 2SC3152 00V/3A VCBO900V) 2SC3152] PW300 Cycle10%

    2SC3153

    Abstract: X0131
    Text: Ordering number:ENN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3153] 15.6


    Original     		PDF ENN1072D 2SC3153 00V/6A VCBO900V) 2SC3153] PW300 Cycle10% 2SC3153 X0131

    TSC5302D

    Abstract: TSC5302DCH TSC5302DCP
    Text: Preliminary TSC5302D High Voltage NPN Transistor with Diode Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 400V BVCBO = 800V Ic = 2A VCE SAT , = 1.0V @ Ic / Ib = 1A / 0.2A Features Ordering Information Built-in free-wheeling diode makes efficient anti


    Original     		PDF TSC5302D TSC5302DCH O-251 TSC5302DCP O-252 O-251 TS5302D TSC5302D TSC5302DCH TSC5302DCP

    2SC3927

    Abstract: DSA0016508
    Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC


    Original     		PDF 2SC3927 MT-100 100max 550min Pulse15) 105typ 2SC3927 DSA0016508

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2010C [2SC3149] 10.2


    Original     		PDF ENN1068C 2SC3149 00V/1 VCBO900V) 2010C 2SC3149] PW300 Cycle10%

    2sc3151

    Abstract: No abstract text available
    Text: Ordering number:ENN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · High-speed switching. · Wide ASO. unit:mm 2022A [2SC3151] 15.6


    Original     		PDF ENN1070C 2SC3151 00V/1 VCBO900V) 2SC3151] PW300 Cycle10% 2sc3151

    2SC4299

    Abstract: No abstract text available
    Text: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max


    Original     		PDF 2SC4299 FM100 100max 800min 50typ 2SC4299

    transistor 2sc4237

    Abstract: power TRANSISTOR 800V 5A transistor 800V 1A 2SC4237 TV power transistor datasheet transistor Ic 1A datasheet NPN npn switching transistor Ic 5A transistor transistor Ic 1A NPN transistor 03 NPN
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    Original     		PDF 2SC4237 transistor 2sc4237 power TRANSISTOR 800V 5A transistor 800V 1A 2SC4237 TV power transistor datasheet transistor Ic 1A datasheet NPN npn switching transistor Ic 5A transistor transistor Ic 1A NPN transistor 03 NPN

    2SC3149

    Abstract: 400V voltage regulator
    Text: Ordering number:EN1068C NPN Triple Diffused Planar Silicon Transistor 2SC3149 800V/1.5A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3149] 1 : Base


    Original     		PDF EN1068C 2SC3149 00V/1 VCBO900V) 2010C 2SC3149] O-220AB SC-46 PW300 2SC3149 400V voltage regulator

    4517A

    Abstract: 2sc4517 2SC4517A FM20
    Text: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 10.1±0.2 IB 1.5 A VCE(sat)


    Original     		PDF 2SC4517/4517A 100max 550min O220F) 35typ 300mA 2SC4517 2SC4517A 4517A 2SC4517A FM20

    2SC3150

    Abstract: 2sC3150 transistor
    Text: Ordering number:EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions • High breakdown voltage VCBO≥900V . · Fast switching speed. · Wide ASO. unit:mm 2010C [2SC3150] 1 : Base


    Original     		PDF EN1069C 2SC3150 00V/3A VCBO900V) 2010C 2SC3150] O-220AB SC-46 2SC3150 2sC3150 transistor

    2SC3457

    Abstract: c102m SC46
    Text: Ordering number : EN 1580C _ 2SC3457 NPN Triple Diffused Planar Silicon Transistor 800V/3A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ . . Wide ASO. . Adoption of MBIT process.


    OCR Scan     		PDF 1580C l580C 2SC3457 00V/3A PW-300ps DQ20105 2SC3457 c102m SC46