TRANSISTOR 721 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: _ J V BD720 BD722 BD724 BD726 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and

marking 721

Abstract: BF720 BF721
Contextual Info: BF721 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking BF721 721 SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS BF720

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

BD722

Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Contextual Info: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and

74LS324

Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
Contextual Info: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

typ71

Abstract: 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331
Contextual Info: N AMER PHILIPS/DISCRETE bSE D WË bbSSTSl □□21714 TTfl • APX BLY91C A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

nec 2401 831

Abstract: nec 2401 2SC5010-T1 2SC5010 437 20000 marking 83 7749 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and

philips ferrite material specifications

Abstract: BD239 BY239 LXE15450X SC15 mlc444
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE15450X NPN microwave power transistor Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

b0724

Abstract: B0719 BD722 transistor bu 311 B0720 BD724 BD440 BD719 BD720 BD726
Contextual Info: BD720 BD722 BD724 BD726 PHILIPS INTERNATIONAL SLE D • 7110fl2ti 0043004 Ô3T M P H I N T - 3 J - 11 SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a SOT32 plastic envelope intended for use in audio output and general purpose amplifier applications. BD720 is equivalent to BD440. NPN complements are BD719; 721; 723 and

transistor 2sc 1586

Abstract: B 660 TG TRANSISTOR 2Sc 2525 L 3705 2sc 1364 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

TRANSISTOR CW 7808

Abstract: cw 7808 7808 voltage regulator transistor 7808
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Oct 09 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain

cw 7808

Abstract: voltage regulator 7808 7808 voltage regulator 7808 cw TRANSISTOR CW 7808 transistor 7808 ma 7808 BLF1049
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLF1049 UHF power LDMOS transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1049 PINNING - SOT502A FEATURES • High power gain

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Contextual Info: N AUER PHILIPS/DISCRETE L IE b b s a ' m 0 0 2 ^ 7 4 ssi « BLY87C/01 D apx Jl V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to

2SC4548E

Abstract: 2SA1740 2SC4548 transistor 2sa1740
Contextual Info: Ordering number:EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies {SMPS , motor control, welding,

2SA1740

Abstract: 2SC4548 ITR04445
Contextual Info: Ordering number:ENN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions • High breakdown votlage. · Adoption of MBIT process. · Excellent hFE linearlity.

S9011* transistor

Abstract: S9011 BVCBO-50V
Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID. S9011S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR Package: SOT-23 ABSOLUTE MAXIMUM RATINGS at Tan*F=25#C Characteristic Symbol Rating Unit

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LID . S9011S SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM CONVERTER, AM/FM IF AMPLIFIER GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS a t Tanft^25°C Symbol Rating Characteristic Vcbo Collector-Base Voltage